ROHM RZR040P01 Technical data
C
1.5V Drive Pch MOSFET
RZR040P01
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplications
Switching
zPackaging specifications zInner circuit
Type
RZR040P01
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Symbol
DSS
GSS
D
DP
S
SP
D
Limits Unit
−12
±10
±4
∗1
±16
−0.8
∗1
−16
∗2
1.0
150
−55 to +150
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
zThermal resistance
Parameter
hannel to ambient
∗ When mounted on a ceramic board.
Symbol Limits Unit
Rth(ch-a)
∗
125
°C / W
TSMT3
(3)
(1)
(1) Gate
(2) Source
(3) Drain
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
2.9
0.4
1.6
(2)
0.950.95
1.9
Abbreviated symbol : YE
(3)
∗1
(2)
1.0MAX
0.85
0.7
2.8
0
~
0.1
0.6
~
0.3
0.16
Each lead has same dimensions
∗2
(1) Gate
(2) Source
(3) Drain
www.rohm.com
1/4
c
○
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗Pulsed
Min.−Typ. Max.
I
GSS
−±10 µAVGS=±10V, VDS=0V
−12 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
−−−1 µAV
−0.3 −−1.0 V V
− 22 30 I
∗
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
− 30 42 mΩ
− 40 60 I
∗
6.5 −−SV
fs
− 2350 − pF V
iss
− 310
oss
−
rss
∗
−
∗
−
t
r
∗
−
∗
t
−
f
∗
−
g
∗
−
gs
∗
−−nC
gd
− pF V
280
− pF f=1MHz
11
− ns
70
− ns
380
− ns
210
− ns
30
− nC
4.0
− nC
3.5
Min. Typ. Max.
∗
V
SD
−−−1.2 V IS= −4A, VGS=0VForward voltage
Unit
mΩ
mΩ
DS
DS
D
I
D
D
Conditions
= −12V, VGS=0V
= −6V, ID= −1mA
= −4A, VGS= −4.5V
= −2A, VGS= −2.5V
= −2A, VGS= −1.8V
mΩ− 55 110 ID= −0.8A, VGS= −1.5V
= −6V, ID= −4A
DS
= −6V
DS
=0V
GS
V
DD
−6V
ID= −2A
V
GS
= −4.5V
L
3Ω
R
R
G
=10Ω
V
Unit
DD
I
D
V
GS
= −4A
−6V
= −4.5V
L
1.5Ω
R
R
G
=10Ω
Conditions
Data Sheet RZR040P01
www.rohm.com
2/4
c
○
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
Loading...