ROHM RZR040P01 Technical data

C

1.5V Drive Pch MOSFET

RZR040P01

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET

zFeatures

1) Low on-resistance.

2) High power package.

3) Low voltage drive. (1.5V)

zApplications
Switching

zPackaging specifications zInner circuit

Type

RZR040P01

Package
Code
Basic ordering unit (pieces)

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Symbol

DSS
GSS

D

DP

S

SP

D

Limits Unit

−12
±10

±4

∗1

±16

−0.8

∗1

−16

∗2

1.0

150

−55 to +150

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

zThermal resistance

Parameter

hannel to ambient

∗ When mounted on a ceramic board.

Symbol Limits Unit

Rth(ch-a)

∗

125

°C / W

TSMT3

(3)

(1)

(1) Gate
(2) Source
(3) Drain

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

2.9

0.4

1.6

(2)

0.950.95

1.9

Abbreviated symbol : YE

(3)

∗1

(2)

1.0MAX

0.85

0.7

2.8

0

~

0.1

0.6

~

0.3

0.16

Each lead has same dimensions

∗2

(1) Gate
(2) Source
(3) Drain

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2009.06 - Rev.A

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min.−Typ. Max.

I

GSS

−±10 µAVGS=±10V, VDS=0V

−12 −−VID= −1mA, VGS=0V

I

DSS

GS (th)

−−−1 µAV

−0.3 −−1.0 V V

− 22 30 I

∗

DS (on)

Y

C

C
C

t

d (on)

t

d (off)

Q

Q

Q

− 30 42 mΩ

− 40 60 I

∗

6.5 −−SV

fs

− 2350 − pF V

iss

− 310

oss

−

rss

∗

−

∗

−

t

r

∗

−

∗

t

−

f

∗

−

g

∗

−

gs

∗

−−nC

gd

− pF V

280

− pF f=1MHz

11

− ns

70

− ns

380

− ns

210

− ns

30

− nC

4.0

− nC

3.5

Min. Typ. Max.

∗

V

SD

−−−1.2 V IS= −4A, VGS=0VForward voltage

Unit

mΩ

mΩ

DS
DS

D

I

D
D

Conditions

= −12V, VGS=0V

= −6V, ID= −1mA
= −4A, VGS= −4.5V
= −2A, VGS= −2.5V
= −2A, VGS= −1.8V

mΩ− 55 110 ID= −0.8A, VGS= −1.5V

= −6V, ID= −4A

DS

= −6V

DS

=0V

GS

V

DD

−6V

ID= −2A
V

GS

= −4.5V

L

3Ω

R
R

G

=10Ω

V

Unit

DD

I

D

V

GS

= −4A

−6V

= −4.5V

L

1.5Ω

R
R

G

=10Ω

Conditions

Data Sheet RZR040P01

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2009.06 - Rev.A

zElectrical characteristics curves

10

[A]

8

D

6

4

DRAIN CURRENT : -I

2

0

0 0.2 0.4 0.6 0.8 1

DRAIN -SOURC E VOLTAGE : -VDS[V]

VGS= -1.5V

VGS= -1.2V

VGS= -4.5V
V

= -2.5V

GS

V

= -1.8V

GS

VGS= -1.3V

Ta=25°C
Pulsed

10

VGS= -4.5V
V

= -2.5V

8

[A]

D

V
V

GS

GS

GS

= -1.8V
= -1.5V

6

4

DRAIN CURRENT : -I

2

0

0246810

DRAIN-SOURCE VOLTAGE : -VDS[V]

VGS= -1.2V

VGS= -1.1V

Ta=25°C
Pulsed

10

VDS= -6V
Pulsed

[A]

D

1

0.1

DRAIN CURRENT : -I

0.01

0.001
0 0.5 1 1.5 2

GATE-SOUR CE VOLTAGE : -VGS[V]

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C

Data Sheet RZR040P01

Fi g.1 Typic al output char acteri stic s(Ⅰ)

1000

Ta=25°C
Pulsed

]

Ω

100

(ON)[m

DS

10

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1110

DRAIN-CURRENT : -ID[A]

Fi g.4 Stati c Dr ain-Sour ce On-Stat e

Resi stance vs. Dr ain Current(Ⅰ)

1000

VGS= -1.8V
Pulsed

]

Ω

100

(on) [m

DS

10

VGS= -4.5V
V

= -2.5V

GS

V

= -1.8V

GS

= -1.5V

V

GS

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fi g.2 T ypical output char acter isti cs(Ⅱ)

1000

VGS= -4.5V
Pulsed

]

Ω

100

(ON)[m

DS

10

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10

DRAIN-CURRENT : -I

Fi g.5 Stati c Dr ain-Sour ce On-Stat e

Resi stance vs. Dr ain Current(Ⅱ)

1000

VGS= -1.5V
Pulsed

]

Ω

100

(on) [m

DS

10

Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C

[A]

D

Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fi g.3 Typic al Tr ansfer C haracter isti cs

1000

VGS= -2.5V
Pulsed

]

Ω

100

(ON)[m

DS

10

RESIST ANCE : R

STATI C DRAIN -SOUR CE ON- STATE

1

0.1110

DRAIN-CURRENT : -I

Fi g.6 Stati c Drai n-Sourc e On-State

Resi stance vs. Dr ain Current(Ⅲ)

10

VGS=0V
Pulsed

Ta=125°C

1

Ta=75°C
Ta=25°C

Ta= -25°C

0.1

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

[A]

D

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1110

DRAIN CURRENT : -I

Fi g.7 Stati c Drai n-Sourc e On-State

Resi stance vs. Dr ain Current(Ⅳ)

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[A]

D

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10

DRAIN CURRENT : -ID[A]

Fi g.8 Stati c Drai n-Sourc e On-State

Res istance vs. D rain C urr ent(Ⅴ)

REVERSE DRAIN CURRENT : -Is [A]

0.01
0 0.2 0.4 0.6 0.8 1

SOUR CE-D RAIN VOLT AGE : -V

Fi g.9 Rever se Drai n Curr ent
vs. Sourse-D rain Voltage

[V]

SD

2009.06 - Rev.A

Fig.1-1 Switching Time Measurement Circuit

%

V

V

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

V

Data Sheet RZR040P01

200

]

Ω

150

(ON)[m

DS

100

50

RESISTAN CE : R

STATIC DRAIN-SOURCE ON-STATE

0

0510

ID= -2.0A

ID= -4.0A

GATE-SOU RCE VOLTAGE : -VGS[V] DRAIN CURRENT : -ID[A]

Fi g.10 Stati c Dr ain-Sour ce On-Stat e
Res istance vs. Gate Source Vol tage

10000

1000

CAPACITANCE : C [pF]

Crss

Coss

100

0.01 0.1 1 10 100

Fi g.13 T ypical Capaci tance
vs. Dr ain-Source Voltag e

zMeasurement circuits

I

V

R

G

D

GS

D.U.T.

Ciss

Ta= 25°C
Pulsed

Ta= 25°C
f=1MH z
V

GS

R

L

V

=0V

DD

100

VDS= -6V
Pulsed

Ta= -25°C
Ta=25°C
Ta=75°C
Ta= 125°C

10

: |Yfs|[S]

FORWARD TRANSFER ADMITTANCE

1

0.1 1 10

Fi g.11 F orward Tr ansfer Admittance
vs. Dr ain Current

1000

100

td(off)

10

SWITCH ING TIME : t [ns]

1

0.01 0.1 1 10

Fi g.14 Swit ching　Char acter isti cs

V

DS

tf

td(on)

tr

DRAIN-CURRENT : -ID[A]GATE-SOU RCE VOLTAGE : - VDS[V]

Ta=25°C VDD= -6V
V

=- 4.5V RG=10Ω

GS

Pulsed

Pulse Width

GS

10%

50%

90%

5

Ta=25°C
V

= -6V

DD

[V]

I

= -4.0A

D

4

GS

R

=10Ω

G

Pulsed

3

2

1

GATE-SOU RCE VOLTAGE : - V

0

0 5 10 15 20 25 30 35

TOTAL GATE CHAR GE : Qg [nC ]

Fi g.12 Dynamic Input Charac teris tics

50%

10% 10

DS

t

90% 90%

d(on)

tr

t

on

t

d(off)

tf

t

off

D

V

GS

I

G(Const.)

R

G

zNotice

This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

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I

D.U.T.

Fig.1-2 Switching Waveforms

VG

V

DS

g

R

L

GS

V

DD

QgsQ

Q

gd

Charge

2009.06 - Rev.A

Notes

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which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and
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