ROHM RZR025P01 Technical data

Transistors
1.5V Drive Pch MOSFET
RZR025P01
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT3).
4) Low voltage drive (1.5V).
zApplication Switching
zStructure
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TSMT3
(1) Gate (2) Source (3) Drain
2.9
0.4
(3)
(2)
(1)
0.950.95
1.9
Abbreviated symbol : YC
1.0MAX
2.8
1.6
Each lead has same dimensions
RZR025P01
0.85
0.7
0
~
0.1
0.6
~
0.3
0.16
zPackaging specifications zEquivalent circuit
Type
RZR025P01
Package Code Basic ordering unit (pieces)
Taping
TL
3000
(3)
(1)
2
1 ESD PROTECTION DIODE2 BODY DIODE
1
(2)
(1) Gate (2) Source (3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage
Drain current Source current
(Body diode)
Continuous Pulsed Continuous
Pulsed Total power dissipation Channel temperature Range of Storage temperature
1 Pw10µs, Duty cycle1%2 Mounted on a ceramic board
Symbol
DSS GSS
D
DP
S
SP
D
Limits Unit
12 ±10
±2.5
1
±10
0.8
12
10
1.0
VV VV AI AI AI AI
WP
°CTch 150 °CTstg −55 to +150
zThermal resistance
Parameter Symbol Limits Unit
Channel to ambient
When mounted on a ceramic board.
Rth (ch-a) 125
°C / W
1/5
RZR025P01
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol Gate-source leakage Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current Gate threshold voltage
Static drain-source on-state resistance
V
R
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time
t
Rise time Turn-off delay time
t
Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
zBody diode characteristics(Source-drain) (Ta=25°C)
Parameter Symbol
Pulsed
2/5
Min. Typ. Max.
I
GSS
−−±10 µAV
Unit
12 −−VID= 1mA, VGS=0V
I
DSS
GS (th)
DS (on)
Y
C
C C
d (on)
d (off)
Q
Q
Q
V
−−−1 µAV
0.3 −−1.0 V V
44 61 I
60 84 m
81 121 I
fs
iss oss rss
t
r
t
f
g
gs
gd
110 220
3.5 −−SV
1350 pF V
130
−−nC
pF V
125
pF f=1MHz
9
ns
35
ns
130
ns
85
ns
13
nC
2.5
nC V
2.0
Min. Typ. Max.
−−−1.2 VForward voltage
SD
m
m m
Unit
Conditions
=±10V, VDS=0V
GS
= 12V, VGS=0V
DS
= 6V, ID= 1mA
DS
= 2.5A, VGS= 4.5V
D
I
= 1.2A, VGS= 2.5V
D
= 1.2A, VGS= 1.8V
D
I
= 0.5A, VGS= 1.5V
D
= 6V, ID= 2.5A
DS
= 6V
DS
=0V
GS
ID= 1.2A
VDD −6V
GS
= 4.5V
V R
L
=5
G
=10
R V
6V, ID= 2.5A
DD
= 4.5V
GS
L
2.4, RG=10
R
Conditions
IS= 2.5A, VGS=0V
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