Transistors
1.5V Drive Pch MOSFET
RZR025P01
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT3).
4) Low voltage drive (1.5V).
zApplication
Switching
zStructure
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TSMT3
(1) Gate
(2) Source
(3) Drain
2.9
0.4
(3)
(2)
(1)
0.950.95
1.9
Abbreviated symbol : YC
1.0MAX
2.8
1.6
Each lead has same dimensions
RZR025P01
0.85
0.7
0
~
0.1
0.6
~
0.3
0.16
zPackaging specifications zEquivalent circuit
Type
RZR025P01
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
(3)
(1)
∗2
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗1
(2)
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
DSS
GSS
D
DP
S
SP
D
Limits Unit
−12
±10
±2.5
∗1
±10
−0.8
∗1
∗2
−10
1.0
VV
VV
AI
AI
AI
AI
WP
°CTch 150
°CTstg −55 to +150
zThermal resistance
Parameter Symbol Limits Unit
Channel to ambient
∗ When mounted on a ceramic board.
Rth (ch-a) 125
∗
°C / W
1/5
RZR025P01
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
t
Rise time
Turn-off delay time
t
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics(Source-drain) (Ta=25°C)
Parameter Symbol
∗ Pulsed
2/5
Min. Typ. Max.
I
GSS
−−±10 µAV
Unit
−12 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
DS (on)
Y
C
C
C
d (on)
d (off)
Q
Q
Q
V
−−−1 µAV
−0.3 −−1.0 V V
− 44 61 I
− 60 84 mΩ
∗
− 81 121 I
∗
fs
iss
oss
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
110 220
3.5 −−SV
− 1350 − pF V
− 130
−
−
−
−
−
−
−
−−nC
− pF V
125
− pF f=1MHz
9
− ns
35
− ns
130
− ns
85
− ns
13
− nC
2.5
− nC V
2.0
Min. Typ. Max.
∗
−−−1.2 VForward voltage
SD
mΩ
mΩ
mΩ−
Unit
Conditions
=±10V, VDS=0V
GS
= −12V, VGS=0V
DS
= −6V, ID= −1mA
DS
= −2.5A, VGS= −4.5V
D
I
= −1.2A, VGS= −2.5V
D
= −1.2A, VGS= −1.8V
D
I
= −0.5A, VGS= −1.5V
D
= −6V, ID= −2.5A
DS
= −6V
DS
=0V
GS
ID= −1.2A
VDD −6V
GS
= −4.5V
V
R
L
=5Ω
G
=10Ω
R
V
−6V, ID= −2.5A
DD
= −4.5V
GS
L
2.4Ω, RG=10Ω
R
Conditions
IS= −2.5A, VGS=0V
Transistors
E
E
E
E
E
zElectrical characteristic curves
RZR025P01
10
Ta=25℃
Pulsed
8
[A]
D
6
4
DRAIN CURRENT - I
2
0
0.0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE -VDS[V]
Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ)
1000
(on) [mΩ]
DS
100
Ta=25
Pulsed
℃
.
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10
DRAIN CURRENT : -I
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
VGS= -10V
V
= -4.5V
GS
V
= -4.0V
GS
V
= -2.5V
GS
V
= -2.0V
VGS= -1.6V
V
= -1.2V
GS
VGS= -1.5V
= -1.8V
V
GS
= -2.5V
V
GS
= -4.5V
V
GS
[A]
D
10
8
[A]
D
6
VGS= -10V
V
= -4.5V
GS
= -2.5V
V
GS
4
DRAIN CURRENT -I
2
0
0246810
DRAIN-SOURCE VOLTAGE -V
1000
VGS= -4.5V
Pulsed
(on) [mΩ]
DS
100
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10
DRAIN CURRENT : -I
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
Ta=25
Pulsed
VGS= -1.8V
VGS= -1.5V
VGS= -1.2V
DS
Ta=125
Ta=75
Ta=25
Ta= -25
[A]
D
10
[A]
VDS= -6V
Pulsed
D
1
Ta= 125
Ta= 75
Ta= 25
Ta= - 25
°C
℃
℃
℃
℃
0.1
DRAIN CURRENT : -I
0.01
0.0 0.5 1.0 1.5
[V]
GATE-SOURCE VOLTAGE : -V
[V]
GS
Fig.3 Typical Transfer Characteristics
1000
VGS= -2.5V
Pulsed
(on) [mΩ]
DS
100
℃
℃
℃
℃
℃
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10
DRAIN CURRENT : -I
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
Ta=125
Ta=75
Ta=25
Ta= -25
[A]
D
℃
℃
℃
1000
VGS= -1.8V
Pulsed
(on) [mΩ]
DS
100
℃
Ta=125
℃
Ta=75
℃
[A]
D
Ta=25
Ta= -25
℃
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10
DRAIN CURRENT : -I
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
1000
VGS= -1.5V
Pulsed
(on) [mΩ]
DS
100
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10
DRAIN CURRENT : -I
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
[A]
D
Ta=125
Ta=75
Ta=25
Ta= -25
℃
℃
℃
℃
10
VGS=0V
Pulsed
℃
Ta=125
℃
Ta=75
1
0.1
REVERSE DRAIN CURRENT : -Is [A]
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
℃
Ta=25
℃
Ta=-25
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
3/5
Transistors
E
t
RZR025P01
200
150
(on) [mΩ]
DS
100
ID= -2.5A
ID= -1.2A
50
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STAT
0
0510
GATE-SOURCE VOLTAGE : -V
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
10000
1000
Crss
100
CAPACITANCE : C [pF]
Coss
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : -V
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Ciss
Ta=25
Pulsed
[V]
GS
Ta=25℃
f=1MHz
V
GS
[V]
DS
=0V
℃
100
VDS= -6V
Pulsed
10
1
ADMITTANC E : |Yfs| [S]
FORWARD TRANSFER
0
0.1 1.0 10.0
DRAIN CURRENT : -ID [A]
Fig.11 Forward Transfer Admittance
vs. Drain Current
Ta= -25
Ta=25
Ta=75
Ta=125
℃
℃
℃
℃
5
Ta=25℃
[V]
= -6V
V
GS
DD
4
= -2.5A
I
D
=10Ω
R
G
Pulsed
3
2
1
GATE-SOURCE VOLTAGE : -V
0
0 2 4 6 8 10 12 14
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
1000
d(off)
tf
100
10
SWITCHING TIME : t [ns]
td(on)
tr
1
Ta=25℃
= -6V
V
DD
=-4.5V
V
GS
=10Ω
R
G
Pulsed
0.01 0.1 1 10
DRAIN CURRENT : -I
[A]
D
Fig.14 Switching Characteristics
4/5
Transistors
zMeasurement circuits
V
GS
R
G
I
D
D.U.T.
RZR025P01
Pulse width
GS
V
DS
R
L
V
DD
V
V
10%
50%
50%
90%
10% 10%
DS
90% 90%
t
d(on)
t
r
t
on
t
d(off)
t
f
t
off
Fig.15 Switching Time Test Circuit
Fig.16 Switching Time Waveforms
V
G
V
GS
I
G (Const.)
R
G
Fig.17 Gate Charge Test Circuit
D
I
D.U.T.
V
DS
R
L
V
GS
QgsQ
V
DD
Fig.18 Gate Charge Waveform
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
Q
g
gd
Charge
5/5
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
ROHM Customer Support System
www.rohm.com
THE AMERICAS / EUROPE / ASIA / JAPAN
Contact us : webmaster@ rohm.co. jp
Copyright © 2008 ROHM CO.,LTD.
21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan
TEL : +81-75-311-2121
FAX : +81-75-315-0172
Appendix1-Rev2.0
Loading...