Transistors
1.5V Drive Pch MOSFET
RZR025P01
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT3).
4) Low voltage drive (1.5V).
zApplication
Switching
zStructure
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TSMT3
(1) Gate
(2) Source
(3) Drain
2.9
0.4
(3)
(2)
(1)
0.950.95
1.9
Abbreviated symbol : YC
1.0MAX
2.8
1.6
Each lead has same dimensions
RZR025P01
0.85
0.7
0
~
0.1
0.6
~
0.3
0.16
zPackaging specifications zEquivalent circuit
Type
RZR025P01
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
(3)
(1)
∗2
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗1
(2)
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
DSS
GSS
D
DP
S
SP
D
Limits Unit
−12
±10
±2.5
∗1
±10
−0.8
∗1
∗2
−10
1.0
VV
VV
AI
AI
AI
AI
WP
°CTch 150
°CTstg −55 to +150
zThermal resistance
Parameter Symbol Limits Unit
Channel to ambient
∗ When mounted on a ceramic board.
Rth (ch-a) 125
∗
°C / W
1/5
RZR025P01
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
t
Rise time
Turn-off delay time
t
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics(Source-drain) (Ta=25°C)
Parameter Symbol
∗ Pulsed
2/5
Min. Typ. Max.
I
GSS
−−±10 µAV
Unit
−12 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
DS (on)
Y
C
C
C
d (on)
d (off)
Q
Q
Q
V
−−−1 µAV
−0.3 −−1.0 V V
− 44 61 I
− 60 84 mΩ
∗
− 81 121 I
∗
fs
iss
oss
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
110 220
3.5 −−SV
− 1350 − pF V
− 130
−
−
−
−
−
−
−
−−nC
− pF V
125
− pF f=1MHz
9
− ns
35
− ns
130
− ns
85
− ns
13
− nC
2.5
− nC V
2.0
Min. Typ. Max.
∗
−−−1.2 VForward voltage
SD
mΩ
mΩ
mΩ−
Unit
Conditions
=±10V, VDS=0V
GS
= −12V, VGS=0V
DS
= −6V, ID= −1mA
DS
= −2.5A, VGS= −4.5V
D
I
= −1.2A, VGS= −2.5V
D
= −1.2A, VGS= −1.8V
D
I
= −0.5A, VGS= −1.5V
D
= −6V, ID= −2.5A
DS
= −6V
DS
=0V
GS
ID= −1.2A
VDD −6V
GS
= −4.5V
V
R
L
=5Ω
G
=10Ω
R
V
−6V, ID= −2.5A
DD
= −4.5V
GS
L
2.4Ω, RG=10Ω
R
Conditions
IS= −2.5A, VGS=0V