ROHM RZR020P01 Technical data
C
1.5V Drive Pch MOSFET
RZR020P01
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package
(TSMT3).
4) Low voltage drive (1.5V).
zApplications zInner circuit
Switching
zPackaging specifications
Type
RZR020P01
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board.
Symbol
DSS
GSS
D
DP
S
SP
D
Limits Unit
−12
±10
±2
∗1
±6
−0.8
∗1
∗2
−6
1.0
zThermal resistance
Parameter Symbol Limits Unit
hannel to ambient
∗ When mounted on a ceramic board.
Rth (ch-a) 125
∗
zDimensions (Unit : mm)
TSMT3
(1) Gate
(2) Source
(3) Drain
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
VV
VV
AI
AI
AI
AI
WP
°CTch 150
°CTstg −55 to +150
°C / W
2.9
0.4
(3)
2.8
1.6
(2)
(1)
0.950.95
1.9
Each lead has same dimensions
Abbreviated symbol : ZE
(3)
∗2
∗1
(2)
1.0MAX
0.85
0.7
0.16
0
~
0.1
0.6
~
0.3
(1) Gate
(2) Source
(3) Drain
www.rohm.com
c
○
2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.03 - Rev.A
RZR020P01
zElectrical characteristics (Ta=25°C)
Data Sheet
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
V
(BR) DSS
V
Min. Typ. Max.
I
GSS
−−±10 µAV
−12 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
−−−1 µAV
−0.3 −−1.0 V V
− 75 105 I
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
R
t
t
DS (on)
Y
C
C
C
d (on)
d (off)
Q
Q
Q
− 105 145 mΩ
∗
− 150 225 I
∗
fs
iss
oss
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
200 400
2 −−SV
− 770 − pF V
− 7560− pF V
−
10
−
17
−
65
−
35
−
6.5
−
1.3
−
0.8
−−nC
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗ Pulsed
Min. Typ. Max.
∗
V
SD
−−−1.2 VForward voltage
Unit
=±10V, VDS=0V
GS
= −12V, VGS=0V
DS
= −6V, ID= −1mA
DS
= −2A, VGS= −4.5V
mΩ
D
I
= −1A, VGS= −2.5V
D
= −1A, VGS= −1.8V
mΩ
D
I
= −0.4A, VGS= −1.5V
mΩ−
D
= −6V, ID= −2A
DS
= −6V
DS
=0V
GS
− pF f=1MHz
V
− ns
− ns
− ns
− ns
− nC
− nC V
DD
ID= −1A
GS
= −4.5V
V
L
6Ω
R
R
G
=10Ω
V
−6V, ID= −2A
DD
= −4.5V
GS
R
L
3Ω, RG=10Ω
Unit
IS= −2A, VGS=0V
Conditions
−6V
Conditions
www.rohm.com
c
○
2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.03 - Rev.A
Loading...