ROHM RZQ050P01 Technical data

A

C

1.5V Drive Pch MOSFET

RZQ050P01

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET

zFeatures

1) Low on-resistance.

2) High power package.

3) Low voltage drive. (1.5V)

zApplications

Switching

zPackaging specifications zEquivalent circuit

Type

RZQ050P01

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

Limits Unit

−12
±10

±5

∗1

±20

−1

∗1

−20

∗2

1.25
150

−55 to +150

zThermal resistance

Parameter

hannel to ambient

∗ When mounted on a ceramic board.

Symbol Limits Unit

Rth(ch-a)

∗

100

TSMT6

2.9

1.9

0.950.95

(6)

(5)

1pin mark

(6)

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(1)

0.4

Abbreviated symbol : YF

(5)

∗2

(2)

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

°C / W

(4)

(2)

1.0MAX

0.85

0.7

2.8

1.6

(3)

Each lead has same dimensions

0~0.1

0.6

~

0.3

0.16

(4)

∗1

(1) Drain
(2) Drain
(3) Gate

(3)

(4) Source
(5) Drain
(6) Drain

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2009 ROHM Co., Ltd. All rights reserved.

1/5

2009.01 - Rev.

A

RZQ050P01

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min.

I

GSS

Typ. Max.

−−±10 µAV

Unit

−12 −−VID= −1mA, VGS=0V

I

DSS

GS (th)

DS (on)

−−−1 µAVDS= −12V, VGS=0V

−0.3 −−1.0 V VDS= −6V, ID= −1mA

− 19 26 I

∗

− 26 36 mΩ

− 33 49 I

mΩ

mΩ

D

I

D
D

mΩ− 44 88 ID= −1A, VGS= −1.5V

∗

Y

C

C
C

t

d (on)

t

d (off)

Q
Q
Q

V

8 −−SV

fs

− 2850 − pF VDS= −6V

iss

− 350

oss

−

rss

∗

−

∗

t

r

−

∗

−

∗

−

t

f

∗

−

g

∗

−

gs

∗

−−nC ID= −5A

gd

− pF VGS=0V

− pF f=1MHz

320

− ns

12

100

− ns

− ns

420

− ns

225

35

− nC

− nC VGS= −4.5V

6.5

5.5

Min. Typ. Max.

∗

SD

−−−1.2 V IS= −5A, VGS=0VForward voltage

ID= −2.5A

V

V
R
R

V

Unit

Conditions

=±10V, VDS=0V

GS

= −5A, VGS= −4.5V
= −2.5A, VGS= −2.5V
= −2.5A, VGS= −1.8V

= −6V, ID= −5A

DS

DD

−6V

GS

= −4.5V

L

2.4Ω

G

=10Ω

−6V

DD

R

L
G

R

1.2Ω
=10Ω

Conditions

Data Sheet

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c

○

2009 ROHM Co., Ltd. All rights reserved.

2/5

2009.01 - Rev.