A
C
1.5V Drive Pch MOSFET
RZQ050P01
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplications
Switching
zPackaging specifications zEquivalent circuit
Type
RZQ050P01
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
D
Limits Unit
−12
±10
±5
∗1
±20
−1
∗1
−20
∗2
1.25
150
−55 to +150
zThermal resistance
Parameter
hannel to ambient
∗ When mounted on a ceramic board.
Symbol Limits Unit
Rth(ch-a)
∗
100
TSMT6
2.9
1.9
0.950.95
(6)
(5)
1pin mark
(6)
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1)
0.4
Abbreviated symbol : YF
(5)
∗2
(2)
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
°C / W
(4)
(2)
1.0MAX
0.85
0.7
2.8
1.6
(3)
Each lead has same dimensions
0~0.1
0.6
~
0.3
0.16
(4)
∗1
(1) Drain
(2) Drain
(3) Gate
(3)
(4) Source
(5) Drain
(6) Drain
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RZQ050P01
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗Pulsed
Min.
I
GSS
Typ. Max.
−−±10 µAV
Unit
−12 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
DS (on)
−−−1 µAVDS= −12V, VGS=0V
−0.3 −−1.0 V VDS= −6V, ID= −1mA
− 19 26 I
∗
− 26 36 mΩ
− 33 49 I
mΩ
mΩ
D
I
D
D
mΩ− 44 88 ID= −1A, VGS= −1.5V
∗
Y
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
V
8 −−SV
fs
− 2850 − pF VDS= −6V
iss
− 350
oss
−
rss
∗
−
∗
t
r
−
∗
−
∗
−
t
f
∗
−
g
∗
−
gs
∗
−−nC ID= −5A
gd
− pF VGS=0V
− pF f=1MHz
320
− ns
12
100
− ns
− ns
420
− ns
225
35
− nC
− nC VGS= −4.5V
6.5
5.5
Min. Typ. Max.
∗
SD
−−−1.2 V IS= −5A, VGS=0VForward voltage
ID= −2.5A
V
V
R
R
V
Unit
Conditions
=±10V, VDS=0V
GS
= −5A, VGS= −4.5V
= −2.5A, VGS= −2.5V
= −2.5A, VGS= −1.8V
= −6V, ID= −5A
DS
DD
−6V
GS
= −4.5V
L
2.4Ω
G
=10Ω
−6V
DD
R
L
G
R
1.2Ω
=10Ω
Conditions
Data Sheet
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2009.01 - Rev.
A
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SO
C
O
S
S
C
SO
C
O
S
RZQ050P01
zElectrical characteristic curves
10
Ta=2 5
℃
GS
GS
GS
GS
=-4.5V
=-2.5V
=-1.8V
=-1.5V
Pulsed
VGS=-1.2V
VGS=-1.1V
VGS=-1.0V
8
[A]
D
6
4
2
DRAIN CURRENT : -I
0
0 0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics
VGS=-10V
V
V
V
V
10
8
[A]
D
6
4
2
DRAIN CURRENT : -I
0
0246810
VGS=-1.8V
=-1.5V
V
GS
VGS=-1.3V
VGS=-1.2V
VGS=-1.1V
DRAIN-SOURCE VOLTAGE : -V
Ta= 25
Pulsed
10
1
[A]
D
0.1
℃
[V]
DS
0.01
DRAIN CURRENT : -I
0.001
Data Sheet
VDS=-6V
Pulsed
Ta= 125
℃
Ta= 75
℃
Ta= 25
℃
Ta= -25
℃
00.511.5
GATE-SOURCE VOLTAGE : -VGS[V]
1000
Ta= 25
]
Ω
(ON)[m
100
DS
10
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
1000
]
TATE
Ω
N-
E
(ON)[m
100
DS
UR
10
DRAIN-
RESISTANCE : R
TATI
℃
Pulsed
1
0.1 1 10
DRAIN-CURRENT : -I
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
VGS= -1.8V
Pulsed
1
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
VGS= -1.5V
V
= -1.8V
GS
= -2.5V
V
GS
= -4.5V
V
GS
[A]
D
Ta= 125
℃
Ta= 75
℃
Ta= 25
℃
Ta= -25
℃
1000
VGS= -4.5V
]
Ω
Pulsed
(ON)[m
100
DS
10
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
1
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
1000
VGS= -1.5V
]
TATE
N-
E
UR
DRAIN-
TATI
Pulsed
Ω
100
(ON)[m
DS
10
RESISTANCE : R
1
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
Ta=1 25
Ta=7 5
Ta=2 5
Ta= - 25
Ta= 125
Ta= 75
Ta= 25
Ta= -25
1000
VGS= -2.5V
℃
℃
℃
℃
℃
℃
℃
℃
]
Ω
Pulsed
(ON)[m
100
DS
10
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
1
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
10
VGS=0V
Pulsed
Ta=125
℃
Ta= 75
1
0.1
REVERSE DRAIN CURRENT : -Is [A]
0.01
℃
Ta= 25
℃
Ta= -25
℃
0 0.2 0.4 0.6 0.8 1 1.2
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
Ta= 125
Ta= 75
Ta= 25
Ta= -25
℃
℃
℃
℃
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2009.01 - Rev.
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SO
C
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S
S
C
G
[
]
RZQ050P01
Data Sheet
150
]
TATE
Ω
125
N-
E
(ON)[m
100
DS
UR
75
50
DRAIN-
RESISTANCE : R
25
TATI
0
0246810
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
10000
1000
CAPACITANCE : C [pF]
100
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : -V
ID= -2.5A
ID= -5.0A
GATE-SOURCE VOLTAGE : -VGS[V]
Ciss
Crss
Ta= 25
℃
f=1MHz
V
=0V
GS
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Ta= 25
Pulsed
Coss
100
℃
[V]
DS
VDS=-6V
Pulsed
10
1
ADMITTANCE : |Yfs| [S]
FORWARD TRANSFER
0
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.11 Forward Transfer Admittance
vs. Drain Current
100000
ns
TIME : t
HIN
WIT
10000
1000
100
10
1
tf
td(off)
td(on)
tr
0.01 0.1 1 10
DRAIN CURRENT : -ID[A]
Fig.14 Switching Characteristics
Ta= 125
Ta= 75
Ta= 25
Ta= -25
Ta= 25
V
DD
V
GS
R
G
Pulsed
℃
℃
℃
℃
℃
= -6.0V
= -4.5V
= 10Ω
5
Ta= 25
[V]
GS
GATE-SOURCE VOLTAGE : -V
℃
V
=-6.0V
DD
4
I
=-5.0A
D
R
=10Ω
G
3
Pulsed
2
1
0
0 5 10 15 20 25 30 35
TOTAL GA TE CH AR GE : Qg [ nC]
Fig.12 Dynamic Input Characteristi cs
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Fig.15 Switching Time Measurement Circuit
%
V
V
Fig.17 Gate Charge Measurement Circuit
S
V
RZQ050P01
zMeasurement circuits
Pulse Width
V
GS
R
G
D
I
D.U.T.
GS
V
DS
R
L
V
DD
10%
50%
DS
t
90% 90%
d(on)
t
on
90%
10% 10
t
tr
d(off)
t
50%
off
Data Sheet
tf
Fig.16 Switching Waveforms
V
G
V
I
G(Const)
GS
R
G
D
I
D.U.T.
V
D
R
L
V
DD
GS
Q
Fig.18 Gate Charge Waveform
Q
g
gs
Q
gd
zNotice
This product might cause chip aging and breakdown under the large electrified environment .
Please consider to design ESD protection circuit.
Charge
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Appendix
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM
CO.,LTD.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you
wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM
upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account
when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should
you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no re-
sponsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples
of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to
use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no re-
sponsibility whatsoever for any dispute arising from the use of such technical information.
The Products specified in this document are intended to be used with general-use electronic equipment
or devices (such as audio visual equipment, office-automation equipment, communication devices, elec-
tronic appliances and amusement devices).
The Products are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or
malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the
possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as
derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your
use of any Product outside of the prescribed scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or system
which requires an extremely high level of reliability the failure or malfunction of which may result in a direct
threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment,
aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear
no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intend-
ed to be used for any such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may be controlled under
the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
Notes
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
ROHM Customer Support System
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Copyright © 2009 ROHM Co.,Ltd.
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Appendix-Rev4.0
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