Datasheet RZQ045P01 Datasheet (ROHM) [ru]

Transistors

1.5V Drive Pch MOSFET

RZQ045P01

zStructure
Silicon P-channel MOSFET

zFeatures

1) Low on-resistance.

2) High power package.

3) Low voltage drive. (1.5V)

zApplications

Switching

zPackaging specifications

Type

RZQ045P01

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

zThermal resistance

Parameter

Channel to ambient

∗ Mounted on a ceramic board.

Symbol

DSS
GSS

D

∗1

DP

S

∗1

SP

∗2

D

−55 to +150

Symbol Limits Unit

Rth(ch-a)

∗

zDimensions (Unit : mm)

TSMT6

1pin mark

zEquivalent circuit

(6)

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

Limits Unit

−12
±10

±4.5

±12

−1

−12

1.25
150

100

°C / W

2.9

1.9

(6)

(5)

(1)

0.4

Abbreviated symbol : YG

(5)

∗2

(2)

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

RZQ045P01

1.0MAX

0.950.95

(4)

(2)

0.85

0.7

2.8

1.6

(3)

Each lead has same dimensions

0~0.1

0.16

(4)

∗1

(1) Drain
(2) Drain
(3) Gate

(3)

(4) Source
(5) Drain
(6) Drain

0.6

~

0.3

1/5

Transistors

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage

Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min.−Typ. Max.

I

GSS

−±10 µAVGS=±10V, VDS=0V

−12 −−VID= −1mA, VGS=0V

I

DSS

GS (th)

−−−1 µAV

−0.3 −−1.0 V V

− 25 35 I

∗

DS (on)

Y

C

C
C

t

d (on)

t

d (off)

Q

Q

Q

− 31 43 mΩ

− 39 58 I

∗

6.5 −−SV

fs

− 2450 − pF V

iss

− 320

oss

290

−

rss

∗

∗

t

r

∗

∗

t

f

∗

g

∗

gs

∗

gd

12

−

75

−

390

−

215

−

31

−

4.5

−

−−nC I

4.0

Min. Typ. Max.

∗

V

SD

−−−1.2 V IS= −4.5A, VGS=0VForward voltage

Unit

= −12V, VGS=0V

DS

= −6V, ID= −1mA

DS

= −4.5A, VGS= −4.5V

mΩ

D

= −2.2A, VGS= −2.5V

I

D

= −2.2A, VGS= −1.8V

mΩ

D

mΩ− 50 100 ID= −0.9A, VGS= −1.5V

= −6V, ID= −4.5A

DS

= −6V

DS

− pF V

=0V

GS

− pF f=1MHz

− ns

− ns

− ns

− ns

− nC

− nC V

ID= −2.2A

V

DD

−6V

V

GS

= −4.5V

R

L

2.7Ω

R

G

=10Ω

V

−6V

DD

= −4.5V

GS

= −4.5A

D

Unit

Conditions

R

L

1.3Ω

G

=10Ω

R

Conditions

RZQ045P01

2/5

Transistors

zElectrical characteristic curves

10

8

[A]

D

6

4

2

DRAIN CURRENT : -I

0

0.0 0.2 0.4 0.6 0.8 1.0

DRAIN-SOURCE VOLTAGE : -VDS[V]

-10V

-4.5V

-2.5V

-1.8V

Ta=2 5
Pulsed

-1.5V

-1.4V

-1.3V

VGS=-1.2V

℃

Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ)

10

-10V

-1.6V

8

[A]

D

6

4

2

DRAIN CURRENT : -I

0

0246810

DRAIN-SOURCE VOLTAGE : -V

-1.5V

1.4V

Ta= 25
Pulsed

-1.3V

-1.2V

VGS=-1.1V

RZQ045P01

℃

[V]

DS

10

Ta= 125

[A]

D

DRAIN CURRENT : -I

1

0.1

0.01

0.001

℃

Ta= 75

℃

Ta= 25

℃

Ta= -25

℃

0.0 0.5 1.0 1.5 2.0

GATE-SOURCE VOLTAGE : -VGS[V]

Fig.3 Typical Transfer Characteristics

VDS= -6V

Pulsed

1000

Ta= 25

]

Ω

100

(ON)[m

DS

10

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

℃

Pulsed

0.1 1 10

DRAIN-CURRENT : -I

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

1000

VGS= -1.8V

]

Pulsed

Ω

100

(ON)[m

DS

10

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)

VGS=-1.5V

=-1.8V

V

GS

V

=-2.5V

GS

=-4.5V

V

GS

[A]

D

Ta= 125

Ta= 75
Ta= 25
Ta= -25

1000

VGS= -4.5V

Pulsed

]

Ω

100

(ON)[m

DS

10

RESISTANCE : R

1

STATIC DRAIN-SOURCE ON-STATE

0.1 1 10

DRAIN-CURRENT : -ID[A]

Ta=125

Ta= 75
Ta= 25

Ta= -25

℃
℃
℃

℃

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

1000

VGS= -1.5V

]

Ω

Pulsed

100

(ON)[m

DS

Ta =125

℃
℃
℃

℃

10

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10

DRAIN-CURRENT : -ID[A]

Ta = 75
Ta = 25
Ta = -25

℃
℃
℃

℃

Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)

1000

VGS= -2.5V

]

Pulsed

Ω

100

(ON)[m

DS

10

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10
DRAIN-CURRENT : -ID[A]

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)

100

VGS=0V

Pulsed

10

Ta=1 25

℃

Ta= 7 5

℃

Ta= 2 5

1

0.1

REVERSE DRAIN CURRENT : -Is [A]

0.01

0.0 0.2 0.4 0.6 0.8 1.0

℃

Ta= - 25

℃

SOURCE-DRAIN VOLTAGE : -VSD [V]

Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage

Ta= 125

Ta= 75
Ta= 25

Ta= -25

℃
℃
℃

℃

3/5

Transistors

80

]

Ω

60

(ON)[m

DS

40

20

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0

Fig.10 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage

ID= -2.2A

ID= -4.5A

0246810

GATE-SOUR CE VOLTAGE : -V

Ta= 25
Pulsed

RZQ045P01

100

℃

[V]

GS

VDS=-6V

Pulsed

10

1

: |Yfs| [S]

0.1

0.01

FORWARD TRANSFER ADMITTANCE

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Ta= - 25

Ta= 2 5
Ta= 7 5

Ta= 1 25

℃
℃
℃

℃

Fig.11 Forward Transfer Admittance
vs. Drain Current

4.5
Ta= 25

℃

4

[V]

V

= -6V

DD

GS

3.5

I

= -4.5A

D

R

=10Ω

G

3

Pulsed

2.5

2

1.5

1

0.5

GATE-SOURCE VOLTAGE : -V

0

0 5 10 15 20 25 30 35

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

10000

Ciss

1000

CAPACITANCE : C [pF]

100

0.01 0.1 1 10 100

Crss

DRAIN-SOURCE VOLTAGE : -V

Coss

Fig.13 Typical Capacitance
vs. Drain-Source Voltage

Ta=2 5°C
f=1MHz
V

=0V

GS

100000

10000

1000

100

10

SWITCHING TIME : t [ns]

1

0.01 0.1 1 1 0

[V]

DS

td(off)

tf

tr

DRAIN-CURRENT : -ID[A]

Ta=2 5°C
V

= -6V

DD

V

=-4.5V

GS

R

=10Ω

G

Pulsed

td(on)

Fig.14 Switching Characteristics

4/5

Transistors

zMeasurement circuits

RG

VGS

D

I

D.U.T.

RL

VDD

VDS

RZQ045P01

Pulse Width

V

GS

10%

50%

10% 10%

V

DS

t

90% 90%

d(on)

tr

t

on

90%

t

d(off)

50%

t

off

tf

Fig.15 Switching Time Measurement Circuit

Fig.16 Switching Waveforms

V

G

VGS

IG(Const)

RG

Fig.17 Gate Charge Measurement Circuit

D

I

D.U.T.

RL

VDD

VDS

g

Q

V

GS

Q

gsQgd

Fig.18 Gate Charge Waveform

zNotice

This product might cause chip aging and breakdown under the large electrified environment .
Please consider to design ESD protection circuit.

Charge

5/5

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Appendix1-Rev3.0