ROHM RZQ045P01 Schematic [ru]
Transistors
1.5V Drive Pch MOSFET
RZQ045P01
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplications
Switching
zPackaging specifications
Type
RZQ045P01
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
DSS
GSS
D
∗1
DP
S
∗1
SP
∗2
D
−55 to +150
Symbol Limits Unit
Rth(ch-a)
∗
zDimensions (Unit : mm)
TSMT6
1pin mark
zEquivalent circuit
(6)
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Limits Unit
−12
±10
±4.5
±12
−1
−12
1.25
150
100
°C / W
2.9
1.9
(6)
(5)
(1)
0.4
Abbreviated symbol : YG
(5)
∗2
(2)
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
RZQ045P01
1.0MAX
0.950.95
(4)
(2)
0.85
0.7
2.8
1.6
(3)
Each lead has same dimensions
0~0.1
0.16
(4)
∗1
(1) Drain
(2) Drain
(3) Gate
(3)
(4) Source
(5) Drain
(6) Drain
0.6
~
0.3
1/5
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗Pulsed
Min.−Typ. Max.
I
GSS
−±10 µAVGS=±10V, VDS=0V
−12 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
−−−1 µAV
−0.3 −−1.0 V V
− 25 35 I
∗
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
− 31 43 mΩ
− 39 58 I
∗
6.5 −−SV
fs
− 2450 − pF V
iss
− 320
oss
290
−
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
12
−
75
−
390
−
215
−
31
−
4.5
−
−−nC I
4.0
Min. Typ. Max.
∗
V
SD
−−−1.2 V IS= −4.5A, VGS=0VForward voltage
Unit
= −12V, VGS=0V
DS
= −6V, ID= −1mA
DS
= −4.5A, VGS= −4.5V
mΩ
D
= −2.2A, VGS= −2.5V
I
D
= −2.2A, VGS= −1.8V
mΩ
D
mΩ− 50 100 ID= −0.9A, VGS= −1.5V
= −6V, ID= −4.5A
DS
= −6V
DS
− pF V
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC V
ID= −2.2A
V
DD
−6V
V
GS
= −4.5V
R
L
2.7Ω
R
G
=10Ω
V
−6V
DD
= −4.5V
GS
= −4.5A
D
Unit
Conditions
R
L
1.3Ω
G
=10Ω
R
Conditions
RZQ045P01
2/5
Transistors
zElectrical characteristic curves
10
8
[A]
D
6
4
2
DRAIN CURRENT : -I
0
0.0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE : -VDS[V]
-10V
-4.5V
-2.5V
-1.8V
Ta=2 5
Pulsed
-1.5V
-1.4V
-1.3V
VGS=-1.2V
℃
Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ)
10
-10V
-1.6V
8
[A]
D
6
4
2
DRAIN CURRENT : -I
0
0246810
DRAIN-SOURCE VOLTAGE : -V
-1.5V
1.4V
Ta= 25
Pulsed
-1.3V
-1.2V
VGS=-1.1V
RZQ045P01
℃
[V]
DS
10
Ta= 125
[A]
D
DRAIN CURRENT : -I
1
0.1
0.01
0.001
℃
Ta= 75
℃
Ta= 25
℃
Ta= -25
℃
0.0 0.5 1.0 1.5 2.0
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.3 Typical Transfer Characteristics
VDS= -6V
Pulsed
1000
Ta= 25
]
Ω
100
(ON)[m
DS
10
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
1
℃
Pulsed
0.1 1 10
DRAIN-CURRENT : -I
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
1000
VGS= -1.8V
]
Pulsed
Ω
100
(ON)[m
DS
10
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
1
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
VGS=-1.5V
=-1.8V
V
GS
V
=-2.5V
GS
=-4.5V
V
GS
[A]
D
Ta= 125
Ta= 75
Ta= 25
Ta= -25
1000
VGS= -4.5V
Pulsed
]
Ω
100
(ON)[m
DS
10
RESISTANCE : R
1
STATIC DRAIN-SOURCE ON-STATE
0.1 1 10
DRAIN-CURRENT : -ID[A]
Ta=125
Ta= 75
Ta= 25
Ta= -25
℃
℃
℃
℃
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
1000
VGS= -1.5V
]
Ω
Pulsed
100
(ON)[m
DS
Ta =125
℃
℃
℃
℃
10
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
1
0.1 1 10
DRAIN-CURRENT : -ID[A]
Ta = 75
Ta = 25
Ta = -25
℃
℃
℃
℃
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
1000
VGS= -2.5V
]
Pulsed
Ω
100
(ON)[m
DS
10
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
1
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
100
VGS=0V
Pulsed
10
Ta=1 25
℃
Ta= 7 5
℃
Ta= 2 5
1
0.1
REVERSE DRAIN CURRENT : -Is [A]
0.01
0.0 0.2 0.4 0.6 0.8 1.0
℃
Ta= - 25
℃
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
Ta= 125
Ta= 75
Ta= 25
Ta= -25
℃
℃
℃
℃
3/5
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