Datasheet RZM002P02 Datasheet (ROHM)

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1.2V Drive Pch MOSFET

RZM002P02

zStructure zDimensions (Unit : mm) Silicon P-channel MOSFET

zFeatures

1) High Speed Switching.

2) Small package (VMT3).

3) Ultra Low Voltage drive. (1.2V drive)

zApplications zInner circuit

Switching

zPackaging specifications

VMT3

(1)Gate (2)Source (3)Drain

1.2

0.32

(3)

(2)

(1)

0.22

0.40.4

0.8

Abbreviated symbol : YK

(3)

0.2

1.2

0.8

0.13

0.2

0.5

Type

RZM002P02

Package Code Basic ordering unit (pieces)

Taping

T2L

8000

zAbsolute maximum ratings (Ta=25°C)

Parameter Drain-source voltage Gate-source voltage

Drain current

Source current (Body diode)

Continuous Pulsed Continuous

Pulsed Total power dissipation Channel temperature Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land

Symbol

DSS GSS

∗1

∗1 ∗2

−55 to +150

zThermal resistance

Parameter

hannel to ambient 833

∗ Each terminal mounted on a recommended land

Symbol Limits Unit

Rth(ch-a)

∗

∗1 ESD PROTECTION DIODE ∗2 BODY DIODE

Limits Unit

−20

±10 ±200 ±800

−100

−800

150

VV mAI mAI mAI mAI

°CTch °CTstg

°C/W

(1)

∗2

∗1

(2)

(1) Gate (2) Source (3) Drain

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2009.06 - Rev.B

RZM002P02

zElectrical characteristics (Ta=25°C)

Data Sheet

Parameter Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage

(BR) DSS

Min.−Typ. Max.

GSS

−±10 µAVGS= ±10V, VDS=0V

−20 −−VI

DSS

GS (th)

−−−1 µAV

−0.3 −−1.0 V V

− 0.8 1.2 I

Static drain-source on-state resistance

DS (on)

− 1.0 1.5 Ω

∗

− 1.3

− 3.5 ΩΩI

2.2 I

1.6

− 2.4 9.6 I

∗

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge

∗Pulsed

C C

0.2 −−SV

− 115 − pF V

iss

− 106− pF V

oss

−

rss

d (on)

d (off)

gs gd

∗

−

4−

−

−−ns

1.4

−

0.3

−

0.3

−−nC

− pF f=1MHz

− ns

− nC

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min. Typ. Max.

∗

−−−1.2 V IS= −200mA, VGS=0VForward voltage

Unit

= −1mA, VGS=0V

= −20V, VGS=0V

= −10V, ID= −100uA

= −200mA, VGS= −4.5V

Ω

= −100mA, VGS= −2.5V

= −100mA, VGS= −1.8V

Ω

= −40mA, VGS= −1.5V

= −10mA, VGS= −1.2V

= −10V, ID= −200mA

= −10V

= 0V

ID= −100mA

= −4.5V

100Ω

= 10Ω

VGS= −4.5V

50Ω, RG= 10Ω

Unit

Conditions

−10V

−10V, ID= −200mA

Conditions

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2009.06 - Rev.B

RZM002P02

zElectrical characteristic curves

0.2

0.15

[A]

VGS= - 10.0V V

= -4.5V

= -3.2V

0.1

0.05

DRAIN CURRENT : -I

VGS= -1.5V

VGS= -1.2V

0 0.2 0.4 0.6 0.8 1

Ta=25°C Puls ed

VGS= -2.5V V

= -2.0V

= -1.8V

VGS= -1.0V

0.2

[A]

0.15

0.1

DRAIN CURRENT : -I

0.05

0246 810

VGS= -4.5V

VGS= -2.5V V

= -1.8V

= -1.5V

VGS= -1.2V

VGS= -1.0V

Ta=25°C Pulsed

[A]

DRAIN CURRENT : -I

0.01

0.001

0.0001

Data Sheet

VDS= - 10V Puls ed

0.1

Ta= 125°C

Ta= 75°C

Ta= 25°C Ta= - 25°C

0 0.5 1 1.5

DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOUR CE VOLTAGE : -VDS[V]

Fi g.1 Typic al output char acter isti cs(Ⅰ) Fi g.2 T ypic al output c haracteris tics (Ⅱ)

10000

Ta=25°C Pulsed

]

Ω

(ON)[m

1000

RESIST ANCE : R

STAT IC DR AIN-SO URC E ON-ST ATE

100

0.001 0.01 0.1 1

DRAIN-CURRENT : -I

Fi g.4 St atic D rai n-Sourc e On-Stat e

Resi stance vs. Dr ain Current(Ⅰ)

VGS= -1.2V V

= -1.5V

= -1.8V

= -2.5V

= -4.5V

[A]

10000

VGS= -4.5V Pulsed

]

Ω

(ON)[m

1000

RESISTAN CE : R

STATIC DRAIN- SOURCE ON -STATE

100

0.001 0.01 0.1 1

DRAIN-CURRENT : -ID[A]

Fi g.5 St atic D rai n-Sour ce On- State

Resi stance vs. Drain C urr ent(Ⅱ)

Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C

GATE- SOURC E VOLTAGE : - VGS[V]

Fi g.3 T ypic al Tr ansfer Charac teri stic s

10000

VGS= -2.5V Puls ed

]

Ω

(ON)[m

1000

RESIST ANCE : R

STAT IC DR AIN-SO URC E ON-ST ATE

100

0.001 0.01 0.1 1

DRAIN-CURRENT : -ID[A]

Fi g.6 Stati c Drai n-Sourc e On-State

Resi stance vs. Drain C urr ent(Ⅲ)

Ta= 125°C Ta=75°C Ta=25°C Ta= -25°C

10000

VGS= -1.8V

Pulsed

]

Ω

(ON)[m

1000

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0.01 0.1 1

DRAIN-CURRENT : -ID[A]

Fi g.7 Stati c Drai n-Sourc e On-State

Resi stance vs. Drain C urr ent(Ⅳ)

Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C

10000

VGS= -1.5V Pulsed

]

Ω

(ON)[m

1000

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0.01 0.1

DRAIN-CURRENT : -I

Fig .8 Static Dr ain-Source On-State

Resi stance vs. Drain C urr ent(Ⅴ)

Ta= 125°C Ta=75°C Ta=25°C Ta= -25°C

10000

VGS= -1.2V Pulsed

]

Ω

(ON)[m

1000

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0.01 0.1

[A]

DRAIN-CURRENT : -I

Fi g.9 St atic D rai n-Sour ce On- State

Resi stance vs. Drain C urr ent(Ⅵ)

Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C

[A]

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Fig.1-2 Switching Waveforms

Fig.2-2 Gate Charge Waveform

RZM002P02

1.0 VDS= - 10V

Pulsed

Ta= -25°C Ta= 25°C Ta= 75°C Ta= 125°C

0.1

FOR WARD TRANSF ER ADM ITTANC E : |Yfs| [S]

0.01 0.1 1

DRAIN-CURRENT : -ID[A]

Fi g.10 For ward Tr ansfer Admi ttance vs. Drain Curr ent

1000

100

td(off)

SWITC HING TIME : t [ns]

td(on)

0.01 0.1 1

DRAIN-CURRENT : -ID[A]

Fig.13 Switching Characteristics

zMeasurement circuit

D.U.T.

Ta= 25°C

= - 10V

=-4.5V

=10Ω

Pulsed

VGS=0V Pulsed

0.1

REVERSE DRAIN CURRENT : -Is [A]

0.01

00.511.5

SOUR CE-D RAIN VOLT AGE : -VSD [V]

Fi g.11 Rever se Drai n Curr ent vs. Sourse- Drain Voltage

[V]

GATE-SOU RCE VOLTAGE : - V

00.511.5

TOTAL GATE CH ARGE : Qg [nC]

Fi g.14 D ynamic I nput Charac teris tics

Ta= 125°C

Ta= 75°C Ta= 25°C

Ta= -25°C

Ta= 25°C V I R Pulsed

10%

50%

d(on)

]

Ω

(ON)[

RESIST ANCE : R

STATI C DRAIN -SOUR CE ON- STATE

0246810

Fi g.12 Stati c Dr ain-Sour ce On-St ate Resistance vs. Gate Source Voltag e

1000

Ta=25°C f=1M Hz

=0V

100

= -0.2A

=10Ω

= - 10V

CAPACITAN CE : C [pF]

Coss

0.01 0.1 1 10 100

Fi g.15 Typic al Capaci tance vs. Drain-Source Voltag e

Pulse width

50%

90%

10% 10

90% 90%

d(off)

off

GATE- SOURC E VOLTAGE : -VGS[V]

DR AIN-SOU RCE VOLT AGE : -V

ID= -0.2A

ID= - 0.01A

Crss

Ciss

Ta= 25°C Pulsed

Data Sheet

[V]

ig.1-1 Switching Time Measurement Circu

G (Const.)

ig.2-1 Gate Charge Measurement Circu

zNotice

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.

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D.U.T.

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2009.06 - Rev.B

Notes

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Notice

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Datasheet RZM002P02 Datasheet (ROHM)

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