ROHM RZM002P02 Technical data
C
1.2V Drive Pch MOSFET
RZM002P02
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) High Speed Switching.
2) Small package (VMT3).
3) Ultra Low Voltage drive. (1.2V drive)
zApplications zInner circuit
Switching
zPackaging specifications
VMT3
(1)Gate
(2)Source
(3)Drain
1.2
0.32
(3)
(2)
(1)
0.22
0.40.4
0.8
Abbreviated symbol : YK
(3)
0.2
1.2
0.8
0.13
0.2
0.5
Type
RZM002P02
Package
Code
Basic ordering unit (pieces)
Taping
T2L
8000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current (Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
Symbol
DSS
GSS
D
DP
S
SP
P
D
∗1
∗1
∗2
−55 to +150
zThermal resistance
Parameter
hannel to ambient 833
∗ Each terminal mounted on a recommended land
Symbol Limits Unit
Rth(ch-a)
∗
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Limits Unit
−20
±10
±200
±800
−100
−800
150
150
VV
VV
mAI
mAI
mAI
mAI
mW
°CTch
°CTstg
°C/W
(1)
∗2
∗1
(2)
(1) Gate
(2) Source
(3) Drain
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○
2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.06 - Rev.B
RZM002P02
zElectrical characteristics (Ta=25°C)
Data Sheet
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
V
(BR) DSS
V
Min.−Typ. Max.
I
GSS
−±10 µAVGS= ±10V, VDS=0V
−20 −−VI
I
DSS
GS (th)
−−−1 µAV
−0.3 −−1.0 V V
− 0.8 1.2 I
Static drain-source on-state
resistance
R
DS (on)
− 1.0 1.5 Ω
∗
− 1.3
− 3.5 ΩΩI
2.2 I
1.6
− 2.4 9.6 I
∗
Y
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
C
C
C
t
t
Q
0.2 −−SV
fs
− 115 − pF V
iss
− 106− pF V
oss
−
rss
d (on)
t
r
d (off)
t
Q
Q
gs
gd
∗
∗
∗
∗
f
∗
g
∗
∗
6
−
4−
17
−
17
−−ns
1.4
−
0.3
−
0.3
−−nC
− pF f=1MHz
− ns
− ns
− ns
− nC
− nC
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗Pulsed
Min. Typ. Max.
∗
V
SD
−−−1.2 V IS= −200mA, VGS=0VForward voltage
Unit
= −1mA, VGS=0V
D
= −20V, VGS=0V
DS
= −10V, ID= −100uA
DS
= −200mA, VGS= −4.5V
Ω
D
= −100mA, VGS= −2.5V
I
D
= −100mA, VGS= −1.8V
Ω
D
= −40mA, VGS= −1.5V
D
= −10mA, VGS= −1.2V
D
= −10V, ID= −200mA
DS
= −10V
DS
= 0V
GS
V
DD
ID= −100mA
GS
= −4.5V
V
L
100Ω
R
G
= 10Ω
R
V
DD
VGS= −4.5V
L
50Ω, RG= 10Ω
R
Unit
Conditions
−10V
−10V, ID= −200mA
Conditions
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.06 - Rev.B
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