ROHM RZL025P01 Schematic [ru]
Transistors
1.5V Drive Pch MOSFET
RZL025P01
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplication
Switching
zDimensions (Unit : mm)
TUMT6
RZL025P01
0.2Max.
Abbreviated symbol : YC
zPackaging specifications zEquivalent circuit
Type
RZL025P01
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
(6)
(5)
∗2
(4)
∗1
(1) Drain
(2) Drain
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(2)
(3)
(3) Gate
(4) Source
(5) Drain
(6) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
D
Limits Unit
−12
±10
±2.5
∗1
∗1
∗2
±10
−0.8
−10
1.0
VV
VV
AI
AI
AI
AI
WP
°CTch 150
°CTstg −55 to +150
zThermal resistance
Parameter Symbol Limits Unit
Channel to ambient
∗ When mounted on a ceramic board.
Rth (ch-a) 125
∗
°C / W
1/5
RZL025P01
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
t
Rise time
Turn-off delay time
t
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics(Source-drain) (Ta=25°C)
Parameter Symbol
∗ Pulsed
2/5
Min. Typ. Max.
I
GSS
−−±10 µAV
Unit
−12 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
DS (on)
Y
C
C
C
d (on)
d (off)
Q
Q
Q
V
−−−1 µAV
−0.3 −−1.0 V V
− 44 61 I
− 60 84 mΩ
∗
− 81 121 I
∗
fs
iss
oss
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
110 220
3.5 −−SV
− 1350 − pF V
− 130
−
−
−
−
−
−
−
−−nC
− pF V
125
− pF f=1MHz
9
− ns
35
− ns
130
− ns
85
− ns
13
− nC
2.5
− nC V
2.0
Min. Typ. Max.
∗
−−−1.2 VForward voltage
SD
mΩ
mΩ
mΩ−
Unit
Conditions
=±10V, VDS=0V
GS
= −12V, VGS=0V
DS
= −6V, ID= −1mA
DS
= −2.5A, VGS= −4.5V
D
= −1.2A, VGS= −2.5V
I
D
= −1.2A, VGS= −1.8V
D
I
= −0.5A, VGS= −1.5V
D
= −6V, ID= −2.5A
DS
= −6V
DS
=0V
GS
ID= −1.2A
VDD −6V
GS
= −4.5V
V
R
L
5Ω
G
=10Ω
R
V
−6V, ID= −2.5A
DD
= −4.5V
GS
L
2.4Ω, RG=10Ω
R
Conditions
IS= −2.5A, VGS=0V
Transistors
E
V
V
E
E
E
E
zElectrical characteristic curves
RZL025P01
10
Ta=25℃
Pulsed
8
[A]
D
6
4
DRAIN CURRENT - I
2
0
0.0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE -VDS[V]
Fig.1 Typical Output Characteristics(Ⅰ)
1000
(on) [mΩ]
DS
100
Ta=25
Pulsed
℃
.
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10
DRAIN CURRENT : -I
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
VGS= -10V
= -4.5V
V
GS
= -4.0V
V
GS
= -2.5V
V
GS
V
= -2.0V
VGS= -1.6
VGS= -1.2
VGS= -1.5V
V
GS
V
GS
V
GS
[A]
D
= -1.8V
= -2.5V
= -4.5V
10
8
[A]
D
6
VGS= -10V
= -4.5V
V
GS
= -2.5V
V
GS
4
DRAIN CURRENT -I
2
0
VGS= -1.8V
VGS= -1.5V
VGS= -1.2V
0246810
DRAIN-SOURCE VOLTAGE -V
Fig.2 Typical Output Characteristics(Ⅱ)
1000
VGS= -4.5V
Pulsed
(on) [mΩ]
DS
100
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10
DRAIN CURRENT : -I
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
Ta=25
Pulsed
DS
Ta=125
Ta=75
Ta=25
Ta= -25
[A]
D
10
[A]
VDS= -6V
Pulsed
D
1
Ta= 125
Ta= 75
Ta= 25
Ta= - 25
°C
℃
℃
℃
℃
0.1
DRAIN CURRENT : -I
0.01
0.0 0.5 1.0 1.5
[V]
GATE-SOURCE VOLTAGE : -V
[V]
GS
Fig.3 Typical Transfer Characteristics
1000
VGS= -2.5V
Pulsed
(on) [mΩ]
DS
100
℃
℃
℃
℃
℃
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STAT
Ta=125
Ta=75
Ta=25
Ta= -25
℃
℃
℃
0.1 1 10
DRAIN CURRENT : -I
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
[A]
D
1000
VGS= -1.8V
Pulsed
(on) [mΩ]
DS
100
℃
Ta=125
℃
Ta=75
℃
[A]
D
Ta=25
Ta= -25
℃
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10
DRAIN CURRENT : -I
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
1000
VGS= -1.5V
Pulsed
(on) [mΩ]
DS
100
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10
DRAIN CURRENT : -I
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
[A]
D
Ta=125
Ta=75
Ta=25
Ta= -25
℃
℃
℃
℃
10
VGS=0V
Pulsed
℃
Ta=125
℃
Ta=75
1
0.1
REVERSE DRAIN CURRENT : -Is [A]
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
℃
Ta=25
℃
Ta=-25
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
3/5
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