ROHM RZL025P01 Schematic [ru]

Transistors

1.5V Drive Pch MOSFET

RZL025P01

zStructure

Silicon P-channel MOSFET

zFeatures

1) Low on-resistance.

2) High power package.

3) Low voltage drive. (1.5V)

zApplication
Switching

zDimensions (Unit : mm)

TUMT6

RZL025P01

0.2Max.

Abbreviated symbol : YC

zPackaging specifications zEquivalent circuit

Type

RZL025P01

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

(6)

(5)

∗2

(4)

∗1

(1) Drain
(2) Drain

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(2)

(3)

(3) Gate
(4) Source
(5) Drain
(6) Drain

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Total power dissipation

Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

Limits Unit

−12
±10

±2.5

∗1

∗1
∗2

±10

−0.8

−10

1.0

VV
VV
AI
AI
AI
AI

WP

°CTch 150
°CTstg −55 to +150

zThermal resistance

Parameter Symbol Limits Unit
Channel to ambient

∗ When mounted on a ceramic board.

Rth (ch-a) 125

∗

°C / W

1/5

RZL025P01

Transistors

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time

t

Rise time
Turn-off delay time

t

Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics(Source-drain) (Ta=25°C)

Parameter Symbol

∗ Pulsed

2/5

Min. Typ. Max.

I

GSS

−−±10 µAV

Unit

−12 −−VID= −1mA, VGS=0V

I

DSS

GS (th)

DS (on)

Y

C

C
C

d (on)

d (off)

Q

Q

Q

V

−−−1 µAV

−0.3 −−1.0 V V

− 44 61 I

− 60 84 mΩ

∗

− 81 121 I

∗

fs

iss
oss
rss

∗

∗

t

r

∗

∗

t

f

∗

g

∗

gs

∗

gd

110 220

3.5 −−SV

− 1350 − pF V

− 130

−

−

−

−

−

−

−

−−nC

− pF V

125

− pF f=1MHz

9

− ns

35

− ns

130

− ns

85

− ns

13

− nC

2.5

− nC V

2.0

Min. Typ. Max.

∗

−−−1.2 VForward voltage

SD

mΩ

mΩ
mΩ−

Unit

Conditions

=±10V, VDS=0V

GS

= −12V, VGS=0V

DS

= −6V, ID= −1mA

DS

= −2.5A, VGS= −4.5V

D

= −1.2A, VGS= −2.5V

I

D

= −1.2A, VGS= −1.8V

D

I

= −0.5A, VGS= −1.5V

D

= −6V, ID= −2.5A

DS

= −6V

DS

=0V

GS

ID= −1.2A

VDD −6V

GS

= −4.5V

V
R

L

5Ω

G

=10Ω

R
V

−6V, ID= −2.5A

DD

= −4.5V

GS

L

2.4Ω, RG=10Ω

R

Conditions

IS= −2.5A, VGS=0V

Transistors

E

V

V

E

E

E

E

zElectrical characteristic curves

RZL025P01

10

Ta=25℃
Pulsed

8

[A]

D

6

4

DRAIN CURRENT - I

2

0

0.0 0.2 0.4 0.6 0.8 1.0

DRAIN-SOURCE VOLTAGE -VDS[V]

Fig.1 Typical Output Characteristics(Ⅰ)

1000

(on) [mΩ]

DS

100

Ta=25
Pulsed

℃

.

RESISTANCE : R

10

STATIC DRAIN-SOURCE ON-STAT

0.1 1 10

DRAIN CURRENT : -I

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

VGS= -10V

= -4.5V

V

GS

= -4.0V

V

GS

= -2.5V

V

GS

V

= -2.0V

VGS= -1.6

VGS= -1.2

VGS= -1.5V
V

GS

V

GS

V

GS

[A]

D

= -1.8V
= -2.5V
= -4.5V

10

8

[A]

D

6

VGS= -10V

= -4.5V

V

GS

= -2.5V

V

GS

4

DRAIN CURRENT -I

2

0

VGS= -1.8V

VGS= -1.5V

VGS= -1.2V

0246810

DRAIN-SOURCE VOLTAGE -V

Fig.2 Typical Output Characteristics(Ⅱ)

1000

VGS= -4.5V
Pulsed

(on) [mΩ]

DS

100

RESISTANCE : R

10

STATIC DRAIN-SOURCE ON-STAT

0.1 1 10

DRAIN CURRENT : -I

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

Ta=25
Pulsed

DS

Ta=125
Ta=75
Ta=25
Ta= -25

[A]

D

10

[A]

VDS= -6V
Pulsed

D

1

Ta= 125

Ta= 75
Ta= 25

Ta= - 25

°C

℃
℃
℃

℃

0.1

DRAIN CURRENT : -I

0.01

0.0 0.5 1.0 1.5

[V]

GATE-SOURCE VOLTAGE : -V

[V]

GS

Fig.3 Typical Transfer Characteristics

1000

VGS= -2.5V
Pulsed

(on) [mΩ]

DS

100

℃

℃
℃
℃

℃

RESISTANCE : R

10

STATIC DRAIN-SOURCE ON-STAT

Ta=125
Ta=75
Ta=25
Ta= -25

℃
℃

℃

0.1 1 10

DRAIN CURRENT : -I

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)

[A]

D

1000

VGS= -1.8V
Pulsed

(on) [mΩ]

DS

100

℃

Ta=125

℃

Ta=75

℃

[A]

D

Ta=25
Ta= -25

℃

RESISTANCE : R

10

STATIC DRAIN-SOURCE ON-STAT

0.1 1 10

DRAIN CURRENT : -I

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)

1000

VGS= -1.5V
Pulsed

(on) [mΩ]

DS

100

RESISTANCE : R

10

STATIC DRAIN-SOURCE ON-STAT

0.1 1 10

DRAIN CURRENT : -I

Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)

[A]

D

Ta=125
Ta=75
Ta=25
Ta= -25

℃

℃
℃

℃

10

VGS=0V
Pulsed

℃

Ta=125

℃

Ta=75

1

0.1

REVERSE DRAIN CURRENT : -Is [A]

0.01

0.0 0.2 0.4 0.6 0.8 1.0 1.2

℃

Ta=25

℃

Ta=-25

SOURCE-DRAIN VOLTAGE : -VSD [V]

Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage

3/5