ROHM RZF030P01 Technical data

A

1.5V Drive Pch MOSFET

RZF030P01

zStructure

Silicon P-channel

MOSFET

zFeatures

1) Low on-resistance.

2) High power package.

3) Low voltage drive. (1.5V)

zApplications

Switching

zPackaging specifications

Type

RZF030P01

Package
Code
Basic ordering unit (pieces)

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Total power dissipation

Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

zThermal resistance

Parameter

Channel to ambient

∗ Mounted on a ceramic board.

Symbol

DSS
GSS

D

DP

S

SP

D

Symbol Limits Unit

Rth(ch-a)

Limits Unit

−12
±10

−55 to +150

∗

±3

±12

−0.65

−12

0.8

150

156

∗1
∗1

∗2

zDimensions (Unit : mm)

TUMT3

(1) Gate
(2) Source
(3) Drain

zEquivalent circuit

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

°C / W

Abbreviated symbol : YD

(3)

∗1

(2)

0.2Max.

∗2

(1) Gate
(2) Source
(3) Drain

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c

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2009 ROHM Co., Ltd. All rights reserved.

1/5

2009.01 - Rev.

A

RZF030P01 Data Sheet

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage

Drain-source breakdown voltage

V

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source -drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min.−Typ. Max.

I

GSS

(BR) DSS

I

DSS

−0.3 −−1.0 V V

GS (th)

−±10 µAVGS=±10V, VDS=0V

−12 −−VID= −1mA, VGS=0V

−−−1 µAV

− 28 39 I

DS (on)

Y

C

C
C

t

d (on)

t

d (off)

Q

Q

Q

− 51 76 I

∗

5 −−SV

fs

− 1860 − pF V

iss

− 210

oss

200

−

rss

∗

∗

t

r

∗

∗

t

f

∗

g

∗

gs

∗

gd

9

−

40

−

210

−

120

−

18

−

3.0

−

2.5

−−nC

− 39 54 mΩ

∗

Min. Typ. Max.

∗

V

SD

−−−1.2 V IS= −3A, VGS=0VForward voltage

Unit

= −12V, VGS=0V

DS

= −6V, ID= −1mA

DS

= −3A, VGS= −4.5V

mΩ

D

= −1.5A, VGS= −2.5V

I

D

= −1.5A, VGS= −1.8V

mΩ

D

mΩ− 72 144 ID= −0.6A, VGS= −1.5V

= −6V, ID= −3A

DS

= −6V

DS

− pF V

=0V

GS

− pF f=1MHz

− ns

− ns

− ns

− ns

− nC

− nC

ID= −1.5A

V

DD

−6V

GS

= −4.5V

V
R

L

4Ω

R

G

=10Ω

V

−6V

DD

I

= −3A

D

V

= −4.5V

GS

Unit

Conditions

L

R
R

G

=10Ω

Conditions

2Ω

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c

○

2009 ROHM Co., Ltd. All rights reserved.

2/5

2009.01 - Rev.