Datasheet RZF030P01 Datasheet (ROHM)

A

1.5V Drive Pch MOSFET

RZF030P01

zStructure

Silicon P-channel

MOSFET

zFeatures

1) Low on-resistance.

2) High power package.

3) Low voltage drive. (1.5V)

zApplications

Switching

zPackaging specifications

Type

RZF030P01

Package Code Basic ordering unit (pieces)

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter Drain-source voltage Gate-source voltage

Drain current Source current

(Body diode) Total power dissipation

Channel temperature Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Continuous Pulsed Continuous Pulsed

zThermal resistance

Parameter

Channel to ambient

∗ Mounted on a ceramic board.

Symbol

DSS GSS

D

DP

S

SP

D

Symbol Limits Unit

Rth(ch-a)

Limits Unit

−12 ±10

−55 to +150

∗

±3

±12

−0.65

−12

0.8

150

156

∗1 ∗1

∗2

zDimensions (Unit : mm)

TUMT3

(1) Gate (2) Source (3) Drain

zEquivalent circuit

(1)

∗1 ESD PROTECTION DIODE ∗2 BODY DIODE

VV VV AI AI AI AI

WP

°CTch °CTstg

°C / W

Abbreviated symbol : YD

(3)

∗1

(2)

0.2Max.

∗2

(1) Gate (2) Source (3) Drain

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A

RZF030P01 Data Sheet

zElectrical characteristics (Ta=25°C)

Parameter Symbol Gate-source leakage

Drain-source breakdown voltage

V

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state resistance

V

R

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge

Gate-source charge Gate-drain charge

∗Pulsed

zBody diode characteristics (Source -drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min.−Typ. Max.

I

GSS

(BR) DSS

I

DSS

−0.3 −−1.0 V V

GS (th)

−±10 µAVGS=±10V, VDS=0V

−12 −−VID= −1mA, VGS=0V

−−−1 µAV

− 28 39 I

DS (on)

Y

C

C C

t

d (on)

t

d (off)

Q

− 51 76 I

∗

5 −−SV

fs

− 1860 − pF V

iss

− 210

oss

200

−

rss

∗

t

r

∗

t

f

∗

g

∗

gs

∗

gd

9

−

40

−

210

−

120

−

18

−

3.0

−

2.5

−−nC

− 39 54 mΩ

∗

Min. Typ. Max.

∗

V

SD

−−−1.2 V IS= −3A, VGS=0VForward voltage

Unit

= −12V, VGS=0V

DS

= −6V, ID= −1mA

DS

= −3A, VGS= −4.5V

mΩ

D

= −1.5A, VGS= −2.5V

I

D

= −1.5A, VGS= −1.8V

mΩ

D

mΩ− 72 144 ID= −0.6A, VGS= −1.5V

= −6V, ID= −3A

DS

= −6V

DS

− pF V

=0V

GS

− pF f=1MHz

− ns

− nC

ID= −1.5A

V

DD

−6V

GS

= −4.5V

V R

L

4Ω

R

G

=10Ω

V

−6V

DD

I

= −3A

D

V

= −4.5V

GS

Unit

Conditions

L

R R

G

=10Ω

Conditions

2Ω

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RZF030P01 Data Sheet

zElectrical characteristic curves

10

[A]

D

5

DRAIN CURRENT : -I

0

0.0 2.0 4.0 6.0 8.0 10.0

DRAIN-SOURCE VOLTAGE : -V

Fig.1 Typical Output Characteristics (Ι)

VGS= - 10V

VGS= - 4.5V

VGS= - 1.8V

Ta= 25 pulsed

VGS= - 1.6V

VGS= - 1.4V

VGS= - 1.2V

VGS= - 1.0V

℃

[V]

DS

10

VGS= - 10V

VGS= - 4.5V

[A]

D

5

DRAIN CURRENT : -I

0

0.0 0.2 0.4 0.6 0.8 1.0

DRAIN-SOURCE VOLTAGE : -V

Fig.2 Typical Output Characteristics (Ⅱ)

VGS= - 2.4V

Ta= 25

℃

pulsed

VGS= - 1.8V

VGS= - 1.6V

VGS= - 1.4V

VGS= - 1.2V

VGS= -1.0V

[V]

DS

10

VDS= - 6V

pulsed

[A]

D

1

Ta=1 25

℃

Ta=7 5

℃

Ta=2 5

℃

Ta=- 25

℃

0.0 0.5 1.0 1.5

GATE-SOURCE VOLTAGE: - V

Fig.3 Typical Transfer Characteristics

DRAIN CURRENT: - I

0.1

0.01

0.001

[V]

GS

1000

VGS= - 1.5V

= - 1.8V

V

(on) [mΩ]

DS

100

STATE

RESISTANCE : R

STATIC DRAIN-SOURCE ON-

10

1000

(on) [mΩ]

DS

100

STATE

GS

= - 2.5V

V

GS

= - 4.5V

V

GS

0.01 0.1 1 10 DRAIN CURRENT : - I

Fig.4 Static Drain-Source On-State

Resistance vs.Drain Current

VGS= - 2.5V

pulsed

Ta= 25 pulsed

Ta=125 Ta= 75 Ta= 25 Ta= -25

℃

[A]

D

℃ ℃ ℃

℃

250

200

(on) [mΩ]

150

DS

100

STATE

50

RESISTANCE : R

STATIC DRAIN-SOURCE ON-

0

GATE-SOURCE CURRENT : -V

Fig.5 Static Drain-Source On-State Resistance vs.Gate-Source Voltage

1000

(on) [mΩ]

DS

100

STATE

ID= - 1.5A

ID= - 3.0A

0246810

VGS= - 1.8V

pulsed

Ta=2 5 pulsed

Ta=1 25 Ta=7 5 Ta=2 5 Ta=- 25

℃

[V]

GS

℃ ℃ ℃

℃

1000

VGS= - 4.5V

pulsed

Ta=1 25

(on) [mΩ]

DS

100

STATE

RESISTANCE: R

STATIC DRAIN-SOURCE ON-

10

0.01 0.1 1 10 DRAIN CURRENT : - I

Fig.6 Static Drain-Source On-State

Resistance vs.Drain Current

1000

VGS= - 1.5V

pulsed

(on) [mΩ]

DS

100

STATE

Ta=7 5 Ta=2 5 Ta=- 25

D

Ta= 125 Ta= 75 Ta= 25 Ta= -25

℃ ℃ ℃

℃

[A]

℃ ℃ ℃

℃

RESISTANCE : R

STATIC DRAIN-SOURCE ON-

10

0.01 0.1 1 10

DRAIN CURRENT : - I

Fig.7 Static Drain-Source On-State

Resistance vs. Drain Current

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[A]

D

RESISTANCE : R

STATIC DRAIN-SOURCE ON-

10

0.01 0.1 1 10

DRAIN CURRENT : - I

Fig.8 Static Drain-Source On-State Resistance vs. Drain Current

[A]

D

3/5

STATIC DRAIN-SOURCE ON-

10

0.01 0.1 1 10

DRAIN CURRENT : - I

Fig.9 Static Drain-Source On-State Resistance vs. Drain Current

[A]

D

2009.01 - Rev.

A

)

RZF030P01 Data Sheet

10

VGS=0V

pulsed

100

VDS= - 6V

pulsed

10000

Ciss

1

0.1

SOURCE CURRENT : - Is [A]

0.01

0.0 0.5 1.0 1.5

SOURCE DRAIN VOLTAGE : - V

Fig.10 Source Current vs.

Source-Drain Voltage

10000

1000

SWITCHING TIME : t [ns]

tf

td(off

100

10

tr

1

0.01 0.1 1 10

DRAIN CURRENT : -I

Fig.13 Switching Characteristics

Ta= 125 Ta= 75 Ta= 25 Ta= -25

Ta= 25

=-6V

V

DD

= - 4.5V

V

GS

R

=10Ω

G

Pulsed

D

℃ ℃ ℃

℃

td(on)

[A]

10

Yfs [S]

1

ADMITTANCE :

FORWARD TRANSFER

0.1

[V]

SD

0.01 0.1 1 10

DRAIN CURRENT : - I

Fig.11 Forward Transfer Admittance vs. Drain Current

Ta= 25

[V]

4

GS

3

2

1

GATE-SOURCE VOLTAGE : -V

0

℃

V

= - 6V

DD

= - 3A

I

D

=10Ω

R

G

Pulsed

0 5 10 15 20

TOTAL GATE CHARGE : Qg [nC]

Fig.14 Dynamic Input Characteristic s

Ta= 125 Ta= 75 Ta= 25 Ta= -25

℃ ℃ ℃

℃

[A]

D

1000

100

Ta=25

CAPASITANCE : C [pF]

10

℃

f=1MHz

=0V

V

GS

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : -V

Fig.12 Typical Capacitance vs. Drain-Source Voltage

Coss

Crss

[V]

DS

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A

RZF030P01 Data Sheet

zMeasurement circuits

V

GS

D

I

D.U.T.

R

G

V

DS

R

L

V

DD

V

GS

V

DS

t

d(on)

Pulse Width

10%

50%

90% 90%

t

on

90%

10% 10%

d(off)

t

r

t

off

50%

tf

Fig.1-1 Switching Time Measurement Circuit

Fig.1-2 Switching Waveforms

V

G

D

I

GS

D.U.T.

I

G(Const.)

V

R

G

Fig.2-1 Gate Charge Measurement Circuit

V

DS

R

L

V

DD

V

GS

Q

gs

Fig.2-2 Gate Charge Waveforms

g

Q

gd

Charge

zNotice

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.

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Appendix-Rev4.0

Datasheet RZF030P01 Datasheet (ROHM)

Specifications and Main Features

Frequently Asked Questions

User Manual