ROHM RZF020P01 Technical data

C
RZF020P01
zStructure zDimensions (Unit : mm) Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TUMT3).
4) Low voltage drive (1.5V).
zApplications zInner circuit
Switching
zPackaging specifications
Type
RZF020P01
Package Code Basic ordering unit (pieces)
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage
Drain current
Source current (Body diode)
Continuous Pulsed Continuous
Pulsed Total power dissipation Channel temperature Range of Storage temperature
1 Pw10µs, Duty cycle1%2 When mounted on a ceramic board
Symbol
DSS GSS
D
DP
S
SP
D
Limits Unit
12 ±10
±2
1
±6
0.6
12
6
0.8
zThermal resistance
Parameter Symbol Limits Unit
hannel to ambient
When mounted on a ceramic board.
Rth (ch-a) 156
°C / W
TUMT3
(1) Gate (2) Source (3) Drain
(1)
1 ESD PROTECTION DIODE2 BODY DIODE
VV VV AI AI AI AI
WP
°CTch 150 °CTstg −55 to +150
Abbreviated symbol : ZE
(3)
1
(2)
0.2Max.
2
(1) Gate (2) Source (3) Drain
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c
2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.05 - Rev.A
RZF020P01
zElectrical characteristics (Ta=25°C)
Data Sheet
Parameter Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage
V
(BR) DSS
V
Min. Typ. Max.
I
GSS
−−±10 µAV
12 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
−−−1 µAV
0.3 −−1.0 V V
75 105 I
Static drain-source on-state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
R
t
t
DS (on)
Y
C
C C
d (on)
d (off)
Q
Q
Q
105 145 m
150 225 I
fs
iss oss rss
t
r
t
f
g
gs
gd
200 400
2 −−SV
770 pF V
7560− pF V
10
17
65
35
6.5
1.3
0.8
−−nC
pF f=1MHz
ns
ns
ns
ns
nC
nC V
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
Pulsed
Min. Typ. Max.
V
SD
−−−1.2 VForward voltage
Unit
GS
DS DS
= 2A, VGS= 4.5V
m
D
I
= 1A, VGS= 2.5V
D
= 1A, VGS= 1.8V
m
D
I
= 0.4A, VGS= 1.5V
m
D
DS DS GS
V
DD
ID= 1A
GS
V
L
6
R R
G
=10
V
DD GS
R
L
Unit
IS= 2A, VGS=0V
Conditions
=±10V, VDS=0V
= 12V, VGS=0V = 6V, ID= 1mA
= 6V, ID= 2A = 6V =0V
6V
= 4.5V
−6V, ID= −2A = −4.5V
3, RG=10
Conditions
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c
2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.05 - Rev.A
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