C
1.5V Drive Pch MOSFET
RZF020P01
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TUMT3).
4) Low voltage drive (1.5V).
zApplications zInner circuit
Switching
zPackaging specifications
Type
RZF020P01
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Symbol
DSS
GSS
D
DP
S
SP
D
Limits Unit
−12
±10
±2
∗1
±6
−0.6
∗1
∗2
−6
0.8
zThermal resistance
Parameter Symbol Limits Unit
hannel to ambient
∗ When mounted on a ceramic board.
Rth (ch-a) 156
∗
°C / W
TUMT3
(1) Gate
(2) Source
(3) Drain
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
VV
VV
AI
AI
AI
AI
WP
°CTch 150
°CTstg −55 to +150
Abbreviated symbol : ZE
(3)
∗1
(2)
0.2Max.
∗2
(1) Gate
(2) Source
(3) Drain
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2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.05 - Rev.A
RZF020P01
zElectrical characteristics (Ta=25°C)
Data Sheet
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
V
(BR) DSS
V
Min. Typ. Max.
I
GSS
−−±10 µAV
−12 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
−−−1 µAV
−0.3 −−1.0 V V
− 75 105 I
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
R
t
t
DS (on)
Y
C
C
C
d (on)
d (off)
Q
Q
Q
− 105 145 mΩ
∗
− 150 225 I
∗
fs
iss
oss
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
200 400
2 −−SV
− 770 − pF V
− 7560− pF V
−
10
−
17
−
65
−
35
−
6.5
−
1.3
−
0.8
−−nC
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC V
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗ Pulsed
Min. Typ. Max.
∗
V
SD
−−−1.2 VForward voltage
Unit
GS
DS
DS
= −2A, VGS= −4.5V
mΩ
D
I
= −1A, VGS= −2.5V
D
= −1A, VGS= −1.8V
mΩ
D
I
= −0.4A, VGS= −1.5V
mΩ−
D
DS
DS
GS
V
DD
ID= −1A
GS
V
L
6Ω
R
R
G
=10Ω
V
DD
GS
R
L
Unit
IS= −2A, VGS=0V
Conditions
=±10V, VDS=0V
= −12V, VGS=0V
= −6V, ID= −1mA
= −6V, ID= −2A
= −6V
=0V
−6V
= −4.5V
−6V, ID= −2A
= −4.5V
3Ω, RG=10Ω
Conditions
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2009 ROHM Co., Ltd. All rights reserved.
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2009.05 - Rev.A
V
V
RZF020P01
zElectrical characteristics curves
4
3.5
3
[A]
D
2.5
2
1.5
1
DRAIN CURRENT : -I
0.5
0
0 0.2 0.4 0.6 0.8 1
DR AIN-SOUR CE VOLTAGE : -VDS[V]
Fi g.1 Typic al Output C haracter isti cs(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ)
-4.5
-10
Ta=25°C
Pulsed
-2.5V
-1.8V
-1.6V
VGS= -1.5V
4
-10V
3.5
[A]
D
3
2.5
2
1.5
DRAIN CURRENT : -I
1
0.5
0
0246810
DR AIN-SOUR CE VOLTAGE : -V
-4.5V
-2.5V
-1.8V
-1.5V
VGS= -1.2V
DS
Ta=25°C
Puls ed
[V]
10
VDS= -6V
Pulsed
[A]
D
1
0.1
DRAIN CURRENT : -I
0.01
0.001
00.511.52
GATE-SO URCE VOLTAGE : - VGS[V]
Fi g.3 Typic al Tr ansfer C haracter isti cs
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
Data Sheet
1000
Ta=25°C
Pulsed
]
Ω
(on)[m
DS
100
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.1110
DRAIN-CURRENT : -I
Fi g.4 Stati c Dr ain-Sour ce On-Stat e
Resistance vs. Drain C urr ent(Ⅰ)
1000
VGS= -1.8V
Puls ed
]
Ω
(on) [m
DS
100
RESISTAN CE : R
STATIC DRAIN- SOURC E ON-STAT E
10
0.1110
DRAIN-CURRENT : -ID[A]
Fi g.7 Stati c Dr ain-Sour ce On-Stat e
Resistance vs. Drain C urr ent(Ⅳ)
VGS= -1.5V
= -1.8V
V
GS
V
= -2.5V
GS
= -4.5V
V
GS
[A]
D
Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
VGS= -4.5V
Pulsed
]
Ω
(on) [m
DS
100
RESISTAN CE : R
STATIC DRAIN- SOURC E ON-STAT E
10
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fi g.5 Stati c Dr ain-Sour ce On-State
Resistance vs. Drain C urr ent(Ⅱ)
1000
VGS= -1.5V
Pulsed
]
Ω
(on) [m
DS
100
RESISTAN CE : R
STATIC DRAIN- SOURC E ON-STAT E
10
0.01 0. 1 1 10
DRAIN-CURRENT : -ID[A]
Fi g.8 Stati c Dr ain-Sour ce On-Stat e
Resistance vs. Drai n Curr ent(Ⅴ)
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
VGS= -2.5V
Pulsed
]
Ω
(on)[m
DS
100
RESISTAN CE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fi g.6 St atic D rai n-Sour ce On- State
Resistance vs. Drai n Curr ent(Ⅲ)
10
VDS= -6V
Pulsed
1
FOR WARD T RANSFER
ADMIT TANCE : |Yfs| [S]
0.1
0.01 0. 1 1 10
DRAIN-CURRENT : -ID[A]
Fi g.9 For ward Tr ansfer Admit tance
vs. Drain Curr ent
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
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2009 ROHM Co., Ltd. All rights reserved.
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2009.05 - Rev.A
F
it
%
V
V
F
it
Fig.2-2 Gate Charge Waveform
V
RZF020P01
10
VGS=0V
Pulsed
1
0.1
REVERSE DRAIN CURRENT : -Is [A]
0.01
00.511.5
SOUR CE-D RAIN VOLT AGE : -VSD [V]
Fi g.10 R evers e Dra in Cur rent
vs. Sourse-Drain Voltage
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
5
[V]
GS
4
3
2
1
GATE-SOU RCE VOLTAGE : - V
0
012345678
TOTAL GATE C HARGE : Qg [nC ]
Fi g.13 D ynamic Input Char acteri sti cs
zMeasurement circuit
Ta=25°C
V
DD
= -2.0A
I
D
= 10Ω
R
G
Pulsed
R
G
= -6V
V
GS
500
]
Ω
400
(ON)[m
300
DS
200
100
RESIST ANCE : R
STATI C DRAI N-SOU RCE ON -STATE
0
024 6810
10000
Ta= 25°C
f=1MH z
V
1000
100
CAPAC ITANC E : C [pF]
10
0.01 0.1 1 10 100
D
I
ID= -1A
ID= -2A
GATE- SOURC E VOLTAGE : - VGS[V]
Fig .11 Static D rain-Source On- State
Resi stance vs. Gate Sourc e Voltage
=0V
GS
Crss
DR AIN-SOU RCE VOLT AGE : -V
Fi g.14 T ypic al Capac itance
vs. Drain- Source Voltag e
V
DS
R
L
D.U.T.
V
DD
Coss
Ta=25°C
Pulsed
Ciss
1000
td(off)
100
10
SWITC HING TIM E : t [ns]
1
0.01 0.1 1 10
DRAIN-CURRENT : -ID[A]
Fi g.12 Swi tching Char acteri sti cs
[V]
DS
Pulse width
GS
10%
50%
DS
t
90% 90%
d(on)
t
t
on
Ta= 25°C VDD= -6V
V
=-4.5V RG=10Ω
GS
Pulsed
t
f
td(on)
50%
90%
10% 10
t
d(off)
r
t
t
off
t
r
f
Data Sheet
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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○
2009 ROHM Co., Ltd. All rights reserved.
ig.1-1 Switching Time Measurement Circu
D
VGS
I
VDS
RL
IG (Const.)
RG
D.U.T.
VDD
ig.2-1 Gate Charge Measurement Circu
4/4
Fig.1-2 Switching Waveforms
V
G
g
Q
GS
Q
gs
Q
gd
Charge
2009.05 - Rev.A
Notes
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The content specied herein is for the purpose of introducing ROHM's products (hereinafter
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
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implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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use of such technical information.
Notice
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The Products specied in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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The Products are not designed or manufactured to be used with any equipment, device or
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