ROHM RZF013P01 Technical data

C

1.5V Drive Pch MOSFET

RZF013P01

zStructure zDimensions (Unit : mm)

Silicon P-channel MOSFET

zFeatures

1) Low on-resistance.

2) High power package.

3) Low voltage drive. (1.5V)

zApplications zEquivalent circuit

Switching

zPackaging specifications

Type

RZF013P01

Package Code Basic ordering unit (pieces)

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter Drain-source voltage Gate-source voltage

Drain current

Source current (Body diode)

Total power dissipation Channel temperature Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board

Continuous Pulsed Continuous Pulsed

Symbol

DSS GSS

D

DP

S

SP

D

Limits Unit

−12 ±10

∗1 ∗1

∗2

±1.3 ±5.2

−0.6

−5.2

0.8

150

−55 to +150

zThermal resistance

Parameter

hannel to ambient

∗ When mounted on a ceramic board

Symbol Limits Unit

Rth(ch-a)

∗

156

TUMT3

(1) Gate (2) Source (3) Drain

(1)

∗1 ESD PROTECTION DIODE ∗2 BODY DIODE

VV VV AI AI AI AI

WP

°CTch °CTstg

°C / W

Abbreviated symbol : XC

(3)

∗1

(2)

0.2Max.

∗2

(1) Gate (2) Source (3) Drain

www.rohm.com

c

○

1/5

2009.02 - Rev.A

RZF013P01

zElectrical characteristics (Ta=25°C)

Parameter Symbol Gate-source leakage Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current Gate threshold voltage

Static drain-source on-state resistance

V

R

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge

∗Pulsed

zBody diode characteristics (Source -drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min.−Typ. Max.

I

GSS

−±10 µAVGS=±10V, VDS=0V

−12 −−VID= −1mA, VGS=0V

I

DSS

GS (th)

−−−1 µAV

−0.3 −−1.0 V V

− 190 260 I

DS (on)

Y

C

C C

t

d (on)

t

d (off)

Q

− 400 600 I

∗

1.4 −−SV

fs

− 290 − pF V

iss

− 2821− pF V

oss

−

rss

∗

t

r

∗

t

f

∗

g

∗

gs

∗

gd

8

−

10

−

30

−

9

−

2.4

−

0.6

−

0.4

−−nC

− 280 390 mΩ

∗

Min. Typ. Max.

∗

V

SD

−−−1.2 V IS= −1.3A, VGS=0VForward voltage

Unit

= −12V, VGS=0V

DS

= −6V, ID= −1mA

DS

= −1.3A, VGS= −4.5V

mΩ

D

= −0.6A, VGS= −2.5V

I

D

= −0.6A, VGS= −1.8V

mΩ

D

mΩ− 530 1060 ID= −0.2A, VGS= −1.5V

= −6V, ID= −1.3A

DS

= −6V

DS

=0V

GS

− pF f=1MHz

V

DD

− ns

− nC

−6V

ID= −0.6A

GS

= −4.5V

V

L

10Ω

R

G

=10Ω

R V

−6V

DD

= −1.3A

I

D

V

= −4.5V

GS

Unit

Conditions

L

R R

G

=10Ω

Conditions

4.6Ω

Data Sheet

www.rohm.com

c

○

2/5

2009.02 - Rev.A

STATIC

DRAIN

SOURCE

ON

STATE

RZF013P01

zElectrical characteristic curves

Ta=25°C

2

Pulsed

[A]

D

1.5

1

0.5

DRAIN CURRENT : -I

0

0 0.2 0.4 0.6 0.8 1

VGS= -10V

= -4.5V

V

GS

= -2.5V

V

GS

VGS= -1.8V

VGS= -1.5V

VGS= -1.2V

2

VGS= -4.5V

V

[A]

1.5

D

1

0.5

DRAIN CURRENT : -I

0

0246810

GS

V

GS

= -2.5V

= -1.8V

Ta=25°C Pulsed

VGS= -1.5V

VGS= -1.2V

VGS= -1.0V

[A]

D

0.01

DRAIN CURRENT : -I

0.001

10

VDS= -6V

Pulsed

1

Ta= 125°C

Ta= 75°C

0.1

Ta= 25°C

Ta= - 25°C

0 0.5 1 1.5 2

Data Sheet

DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V]

Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics

10000

Ta=25°C

]

Pulsed

Ω

1000

(ON)[m

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : -I

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ)

VGS= -1.5V

= -1.8V

V

GS

= -2.5V

V

GS

= -4.5V

V

GS

[A]

D

10000

VGS= -4.5V

]

Pulsed

Ω

1000

(ON)[m

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ)

Ta=125°C Ta= 75°C Ta= 25°C Ta= -25°C

GATE-SOURCE VOLTAGE : -VGS[V]

10000

]

Ω

-

(ON)[m

DS

-

RESISTANCE : R

VGS= -2.5V

Pulsed

1000

100

10

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)

Ta=125°C Ta= 75°C Ta= 25°C Ta= -25°C

10000

]

Ω

(ON)[m

DS

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

www.rohm.com

c

○

VGS= -1.8V

Pulsed

1000

100

10

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ)

Ta=125°C

Ta= -25°C

Ta=75°C Ta=25°C

10000

VGS= -1.5V

]

Ω

Pulsed

1000

(ON)[m

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : -I

Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ)

3/5

Ta=125°C

Ta=75°C Ta=25°C

Ta= -25°C

10

VDS= -6V

Pulsed

1

Ta= -25°C Ta=25°C Ta=75°C Ta=125°C

0.1

0.01 0.1 1 10

[A]

D

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : -ID[A]

Fig.9 Forward Transfer Admittance vs. Drain Current

2009.02 - Rev.A

STATIC

DRAIN

SOURCE

ON

STATE

RZF013P01

10

VGS=0V

Pulsed

1

Ta=125°C

0.1

REVERSE DRAIN CURRENT : -Is [A]

0.01

00.511.5

SOURCE-DRAIN VOLTAGE : -VSD [V]

Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage

Ta=75°C Ta=25°C

Ta=-25°C

600

]

500

Ω

-

400

(ON)[m

DS

300

-

200

100

RESISTANCE : R

0

0246810

GATE-SOURC E VOLTAGE : -VGS[V]

Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage

ID= -0.6A

ID= -1.3A

Ta=25°C Pulsed

1000

t

f

100

10

SWITCHING TIME : t [ns]

t

r

1

0.01 0.1 1 10

Fig.12 Switching Characteristics

td(off)

td(on)

DRAIN-CURRENT : -ID[A]

Data Sheet

Ta=25°C

= -6V

V

DD

= -4.5V

V

GS

=10Ω

R

G

Pulsed

5

[V]

GS

4

3

2

1

GATE-SOURCE VOLTAGE : -V

0

0 0.5 1 1.5 2 2.5 3

TOTAL GATE CHARGE : Qg [nC]

Fig.13 Dynamic Input Characteristics

Ta= 25°C

= -6V

V

DD

= -1.3A

I

D

=10Ω

R

G

Pulsed

1000

100

10

CAPACITANCE : C [pF]

Coss

Crss

1

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : -V

Fig.14 Typical Capacitance vs. Drain-Source Voltage

Ciss

Ta=25°C f=1MHz

=0V

V

GS

[V]

DS

www.rohm.com

c

○

4/5

2009.02 - Rev.A

F

it

%

V

F

it

Fig.2-2 Gate Charge Waveform

V

RZF013P01

zMeasurement circuits

V

GS

D

I

D.U.T.

R

G

V

DS

R

L

V

DD

GS

DS

t

d(on)

Pulse Width

10%

50%

90% 90%

t

on

90%

10% 10

d(off)

t

r

t

50%

off

Data Sheet

tf

ig.1-1 Switching Time Measurement Circu

Fig.1-2 Switching Waveforms

V

GS

I

G(Const.)

R

G

ig.2-1 Gate Charge Measurement Circu

D.U.T.

D

V

DS

R

L

V

DD

G

g

Q

GS

Q

gs

Q

gd

Charge

zNotice

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.

www.rohm.com

c

○

5/5

2009.02 - Rev.A

Appendix

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM

Co.,Ltd.

The content specified herein is subject to change for improvement without notice.

The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you

wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM

upon request.

Examples of application circuits, circuit constants and any other information contained herein illustrate the

standard usage and operations of the Products. The peripheral conditions must be taken into account

when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specified in this document. However, should

you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no re-

sponsibility for such damage.

The technical information specified herein is intended only to show the typical functions of and examples

of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to

use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no re-

sponsibility whatsoever for any dispute arising from the use of such technical information.

The Products specified in this document are intended to be used with general-use electronic equipment

or devices (such as audio visual equipment, office-automation equipment, communication devices, elec-

tronic appliances and amusement devices).

The Products are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard against the

possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as

derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your

use of any Product outside of the prescribed scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or system

which requires an extremely high level of reliability the failure or malfunction of which may result in a direct

threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment,

aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear

no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intend-

ed to be used for any such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.

Notes

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office.

ROHM Customer Support System

www.rohm.com

21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan

THE AMERICAS / EUROPE / ASIA / JAPAN

Contact us : webmaster@ rohm.co. jp

TEL : +81-75-311-2121 FAX : +81-75-315-0172

Appendix-Rev4.1

ROHM RZF013P01 Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual