ROHM RZF013P01 Technical data

C

1.5V Drive Pch MOSFET

RZF013P01

zStructure zDimensions (Unit : mm)

Silicon P-channel MOSFET

zFeatures

1) Low on-resistance.

2) High power package.

3) Low voltage drive. (1.5V)

zApplications zEquivalent circuit

Switching

zPackaging specifications

Type

RZF013P01

Package
Code
Basic ordering unit (pieces)

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

Limits Unit

−12
±10

∗1
∗1

∗2

±1.3
±5.2

−0.6

−5.2

0.8

150

−55 to +150

zThermal resistance

Parameter

hannel to ambient

∗ When mounted on a ceramic board

Symbol Limits Unit

Rth(ch-a)

∗

156

TUMT3

(1) Gate
(2) Source
(3) Drain

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

°C / W

Abbreviated symbol : XC

(3)

∗1

(2)

0.2Max.

∗2

(1) Gate
(2) Source
(3) Drain

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2009 ROHM Co., Ltd. All rights reserved.

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2009.02 - Rev.A

RZF013P01

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source -drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min.−Typ. Max.

I

GSS

−±10 µAVGS=±10V, VDS=0V

−12 −−VID= −1mA, VGS=0V

I

DSS

GS (th)

−−−1 µAV

−0.3 −−1.0 V V

− 190 260 I

DS (on)

Y

C

C
C

t

d (on)

t

d (off)

Q

Q

Q

− 400 600 I

∗

1.4 −−SV

fs

− 290 − pF V

iss

− 2821− pF V

oss

−

rss

∗

∗

t

r

∗

∗

t

f

∗

g

∗

gs

∗

gd

8

−

10

−

30

−

9

−

2.4

−

0.6

−

0.4

−−nC

− 280 390 mΩ

∗

Min. Typ. Max.

∗

V

SD

−−−1.2 V IS= −1.3A, VGS=0VForward voltage

Unit

= −12V, VGS=0V

DS

= −6V, ID= −1mA

DS

= −1.3A, VGS= −4.5V

mΩ

D

= −0.6A, VGS= −2.5V

I

D

= −0.6A, VGS= −1.8V

mΩ

D

mΩ− 530 1060 ID= −0.2A, VGS= −1.5V

= −6V, ID= −1.3A

DS

= −6V

DS

=0V

GS

− pF f=1MHz

V

DD

− ns

− ns

− ns

− ns

− nC

− nC

−6V

ID= −0.6A

GS

= −4.5V

V

L

10Ω

R

G

=10Ω

R
V

−6V

DD

= −1.3A

I

D

V

= −4.5V

GS

Unit

Conditions

L

R
R

G

=10Ω

Conditions

4.6Ω

Data Sheet

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c

○

2009 ROHM Co., Ltd. All rights reserved.

2/5

2009.02 - Rev.A