ROHM RZE002P02 Technical data

C

1.2V Drive Pch MOSFET

RZE002P02

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET

zFeatures

1) High speed switching.

2) Small package (EMT3).

3) 1.2V drive.

zApplications

Switching

zPackage specifications zInner circuit

Type

RZE002P02

Package
Code
Basic ordering unit (pieces)

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Souce current

(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land

Symbol

DSS
GSS

D

I

DP

I

S

I

SP

P

D

∗1

∗1
∗2

Limits Unit

−20

±10
±200
±800

−100

−800

150

150

−55 to +150

VV

VV
mAI
mA
mA
mA

mW

°CTch
°CTstg

zThermal resistance

Parameter

hannel to ambient 833

∗ Each terminal mounted on a recommended land

Symbol Limits Unit

Rth(ch-a)

∗

°C/W

EMT3

(3)

(2)

0.2

0.5

(1)Source
(2)Gate
(3)Drain

(2)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

Abbreviated symbol : YK

1.6

0.3

(1)

0.5

1.0

∗1

0.7

0.55

1.6

0.8

0.2

0.15

0.1Min.

(3)

∗2

(1)

(1) Source
(2) Gate
(3) Drain

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2009.06 - Rev.A

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain)

Parameter Symbol

∗Pulsed

Min.−Typ. Max.

I

GSS

−±10 µAV

−20 −−VI

I

DSS

GS (th)

−−−1 µAV

−0.3 −−1.0 V V

− 0.8 1.2 I

− 1.0 1.5 Ω

∗

−

DS (on)

Y

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

∗

fs

∗

∗

∗

∗

∗

g

∗

∗

1.3

−

1.6

−

2.4

0.2 −−SV

− 115 − pF V

− 106− pF V

−

6

−

4

−

17

−

17

−−ns

1.4−

0.3

−

0.3

−−nC

Min. Typ. Max.

∗

V

SD

−−−1.2 V IS= −200mA, VGS=0VForward voltage

Unit

= ±10V, VDS=0V

GS

= −1mA, VGS=0V

D

= −20V, VGS=0V

DS

= −10V, ID= −100µA

DS

= −200mA, VGS= −4.5V

Ω

D

= −100mA, VGS= −2.5V

I

D

2.2

3.5

9.6

= −100mA, VGS= −1.8V

Ω

I

D

Ω

I

= −40mA, VGS= −1.5V

D

Ω

I

= −10mA, VGS= −1.2V

D

= −10V, ID= −200mA

DS

= −10V

DS

= 0V

GS

− pF f=1MHz

− ns

− ns

− ns

− nC

− nC

VDD −10V

ID= −100mA

GS

= −4.5V

V

L

100Ω

R

G

= 10Ω

R

VDD −10V

ID= −200mA

GS

= −4.5V

V

Unit

Conditions

L

50Ω

R

G

= 10Ω

R

Conditions

Data Sheet RZE002P02

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2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.A

zElectrical characteristics curves

0.2

VGS= - 10V
V

VGS= -1.5V

VGS= -1.2V

GS

V

GS

0.15

[A]

D

0.1

0.05

DRAIN CURRENT : -I

0

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE : -VDS[V] DR AIN-SOU RCE VOLT AGE : -VDS[V]

Fi g.1 Typic al Output Char acteri stics (Ⅰ) Fi g.2 Typic al Output C haracter isti cs(Ⅱ)

= -4.5V
= -3.2V

Ta=25°C
Pulsed

VGS= -2.5V
V

= -2.0V

GS

V

= -1.8V

GS

VGS= -1.0V

0.2

[A]

D

0.15

0.1

DRAIN CURRENT : -I

0.05

0

VGS= -4.5V

VGS= -2.5V
V

= -1.8V

GS

V

= -1.5V

GS

0246 810

VGS= -1.2V

VGS= -1.0V

Ta= 25°C
Pulsed

1

VDS= -10V
Pulsed

[A]

0.1

D

Ta= 125°C

Ta= 75°C

0.01
Ta= 25°C

Ta= - 25°C

0.001

DRAIN CURRENT : -I

0.0001

00.5 11.5

GATE- SOURC E VOLTAGE : - VGS[V]

Fi g.3 Typic al Tr ansfer C haracter isti cs

Data Sheet RZE002P02

10000

Ta=25°C
Pulsed

]

Ω

(ON)[m

DS

1000

RESIST ANCE : R

STATIC DRAIN-SOU RCE ON- STATE

100

0.001 0.01 0.1 1

DRAIN-CURRENT : -I

Fi g.4 Stati c Dr ain-Sour ce On-St ate

Resi stance vs. Dr ain Current(Ⅰ)

10000

VGS= -1.8V
Pulsed

]

Ω

(ON)[m

DS

1000

RESIST ANCE : R

STATI C DRAI N-SOU RCE ON -STATE

100

0.001 0.01 0. 1 1

DRAIN-CURRENT : -ID[A]

Fi g.7 St atic D rai n-Sour ce On- State

Res istance vs. D rain C urr ent(Ⅳ)

VGS= -1.2V
V

GS

V

GS

V

GS

V

GS

[A]

D

Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C

= -1.5V
= -1.8V
= -2.5V
= -4.5V

10000

VGS= -4.5V
Pulsed

]

Ω

(ON)[m

DS

1000

RESIST ANCE : R

STATI C DRAIN -SOUR CE ON- STATE

100

0.001 0.01 0. 1 1

DRAIN-CURRENT : -ID[A]

Fi g.5 St atic D rai n-Sour ce On- State

Resi stance vs. Dr ain Current(Ⅱ)

10000

VGS= -1.5V
Pulsed

]

Ω

(ON)[m

DS

1000

RESIST ANCE : R

STATI C DRAI N-SOU RCE ON -STATE

100

0.001 0.01 0.1

Fi g.8 Stati c Dr ain-Sour ce On-Stat e

Resi stance vs. Dr ain Current(Ⅴ)

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

DRAIN-CURRENT : -I

Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C

[A]

D

10000

VGS= -2.5V
Pulsed

]

Ω

(ON)[m

DS

1000

RESIST ANCE : R

STATIC DRAIN-SOU RCE ON- STATE

100

0.001 0.01 0. 1 1

DRAIN-CURRENT : -ID[A]

Fi g.6 Stati c Drai n-Sourc e On-State

Res istance vs. Drain C urr ent(Ⅲ)

10000

VGS= -1.2V
Pulsed

]

Ω

(ON)[m

DS

1000

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0. 01 0.1

DRAIN-CURRENT : -I

Fi g.9 St atic D rai n-Sour ce On- State

Resi stance vs. Dr ain Current(Ⅵ)

Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

[A]

D

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2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.A

F

it

%

V

V

F

it

Fig.2-2 Gate Charge Waveform

V

Data Sheet RZE002P02

1.0
VDS= - 10V

Pulsed

Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C

0.1

FOR WARD TRANSF ER ADM ITTANC E : |Yfs| [S]

0.01 0.1 1

DRAIN-CURRENT : -ID[A]

Fi g.10 For ward Tr ansfer Admi ttance
vs. Drain Curr ent

1000

100

td(off)

t

f

10

SWITC HING TIME : t [ns]

1

0.01 0.1 1

td(on)

t

r

DRAIN-CURRENT : -ID[A]

Fig.13 Switching Characteristics

zMeasurement circuit

VGS

RG

I

D

D.U.T.

Ta=25°C

= -10V

V

DD

V

=- 4.5V

GS

=10Ω

R

G

Pulsed

RL

VDD

VDS

1

VGS=0V
Pulsed

0.1

REVERSE DRAIN CURRENT : -Is [A]

0.01

00.511.5

SOUR CE-D RAIN VOLT AGE : -VSD [V]

Fi g.11 Rever se Drai n Curr ent
vs. Sourse- Drain Voltage

5

[V]

4

GS

3

2

1

GATE- SOURC E VOLTAGE : -V

0

00.511.5

TOTAL GATE CH ARGE : Qg [nC]

Fi g.14 D ynamic I nput Charac teris tics

Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Ta= 25°C
V
V
R
Pulsed

GS

10%

50%

DS

t

90% 90%

d(on)

t

on

]

Ω

(ON)[

DS

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

1000

100

10

DD

GS

G

= - 10V
=-0.2V

=10Ω

CAPAC ITANCE : C [pF]

Pulse Width

90%

10% 10

t

t

d(off)

r

t

5

4

3

2

1

0

1

0.01 0.1 1 10 100

ID= -0.2A

ID= - 0.01A

0246810

GATE-SOU RCE VOLTAGE : - VGS[V]

Fi g.12 Stati c Dr ain-Sour ce On-St ate
Resistance vs. Gate Source Voltag e

Ta=25°C
f=1M Hz

=0V

V

GS

Coss

Crss

DR AIN-SOU RCE VOLT AGE : -V

Fi g.15 Typic al Capaci tance
vs. Drain-Source Voltag e

Ciss

Ta= 25°C
Pulsed

DS

[V]

50%

t

f

off

ig.1-1 Switching Time Measurement Circu

V

GS

I

G(Const.)

R

G

ig.2-1 Gate Charge Measurement Circu

zNotice

This product might cause chip aging and breakdown under the large electrified environment.

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D

I

D.U.T.

V

DS

R

L

V

DD

Fig.1-2 Switching Waveforms

V

G

g

Q

GS

Q

gs

Q

gd

Charge

2009.06 - Rev.A

Notes

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"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and
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