ROHM RZE002P02 Technical data
C
1.2V Drive Pch MOSFET
RZE002P02
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) High speed switching.
2) Small package (EMT3).
3) 1.2V drive.
zApplications
Switching
zPackage specifications zInner circuit
Type
RZE002P02
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Souce current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
Symbol
DSS
GSS
D
I
DP
I
S
I
SP
P
D
∗1
∗1
∗2
Limits Unit
−20
±10
±200
±800
−100
−800
150
150
−55 to +150
VV
VV
mAI
mA
mA
mA
mW
°CTch
°CTstg
zThermal resistance
Parameter
hannel to ambient 833
∗ Each terminal mounted on a recommended land
Symbol Limits Unit
Rth(ch-a)
∗
°C/W
EMT3
(3)
(2)
0.2
0.5
(1)Source
(2)Gate
(3)Drain
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Abbreviated symbol : YK
1.6
0.3
(1)
0.5
1.0
∗1
0.7
0.55
1.6
0.8
0.2
0.15
0.1Min.
(3)
∗2
(1)
(1) Source
(2) Gate
(3) Drain
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain)
Parameter Symbol
∗Pulsed
Min.−Typ. Max.
I
GSS
−±10 µAV
−20 −−VI
I
DSS
GS (th)
−−−1 µAV
−0.3 −−1.0 V V
− 0.8 1.2 I
− 1.0 1.5 Ω
∗
−
DS (on)
Y
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
Q
gs
Q
gd
∗
fs
∗
∗
∗
∗
∗
g
∗
∗
1.3
−
1.6
−
2.4
0.2 −−SV
− 115 − pF V
− 106− pF V
−
6
−
4
−
17
−
17
−−ns
1.4−
0.3
−
0.3
−−nC
Min. Typ. Max.
∗
V
SD
−−−1.2 V IS= −200mA, VGS=0VForward voltage
Unit
= ±10V, VDS=0V
GS
= −1mA, VGS=0V
D
= −20V, VGS=0V
DS
= −10V, ID= −100µA
DS
= −200mA, VGS= −4.5V
Ω
D
= −100mA, VGS= −2.5V
I
D
2.2
3.5
9.6
= −100mA, VGS= −1.8V
Ω
I
D
Ω
I
= −40mA, VGS= −1.5V
D
Ω
I
= −10mA, VGS= −1.2V
D
= −10V, ID= −200mA
DS
= −10V
DS
= 0V
GS
− pF f=1MHz
− ns
− ns
− ns
− nC
− nC
VDD −10V
ID= −100mA
GS
= −4.5V
V
L
100Ω
R
G
= 10Ω
R
VDD −10V
ID= −200mA
GS
= −4.5V
V
Unit
Conditions
L
50Ω
R
G
= 10Ω
R
Conditions
Data Sheet RZE002P02
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
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