Datasheet RYM002N05 Datasheet (ROHM)

www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.

0.9V Drive Nch MOSFET

RYM002N05

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) High speed switing.

2) Small package(VMT3).

3) Ultra low voltage drive(0.9V drive).

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code T2L
Basic ordering unit (pieces) 8000

RYM002N05 

VMT3

Abbreviated symbol : QJ

(3)

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

D

50 V

8V

200 mA

*1

800 mA

125 mA

*1

800 mA

*2

150 mW

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a recommended land.

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a) 833  C / W

* Each terminal mounted on a recommended land.

Symbol Limits Unit

*

(1) Gate
(2) Source
(3) Drain

(1) (2)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

1/5

2010.07 - Rev.A

Data Sheet

www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.

RYM002N05

 Electrical characteristics (Ta = 25C)

Parameter

Symbol Min. Typ. Max. Unit
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=8V, VDS=0V

50 - - V ID=1mA, VGS=0V

--1AVDS=50V, VGS=0V

0.3 - 0.8 V VDS=10V, ID=1mA

Conditions

- 1.6 2.2 ID=200mA, VGS=4.5V

- 1.7 2.4 ID=200mA, VGS=2.5V

Static drain-source on-state
resistance

R

DS (on)

- 2.0 2.8 ID=200mA, VGS=1.5V



- 2.2 3.3 ID=100mA, VGS=1.2V

- 3.0 9.0 ID=10mA, VGS=0.9V

iss

oss

rss

d(on)

d(off)

*

- 26 - pF VDS=10V

-6-pFV

GS

=0V

- 3 - pF f=1MHz

-5-nsI

*

*

-8-nsV

*

*

r

- 17 - ns RL=250

*

*

- 43 - ns RG=10

*

*

f

=100mA, VDD 25V

D

=4.5V

GS

Forward transfer admittance l Yfs l 0.2 - - S ID=200mA, VDS=10V
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=200mA, VGS=0V

Conditions

2/5

2010.07 - Rev.A

Data Sheet

www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.

RYM002N05

 Electrical characteristics curves (Ta = 25C)

0.2

[A]

D

0.1

VGS= 0.9V

DRAIN CURRENT : I

0

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE : VDS[V]

Fig.1 Typical Output Characteristics( Ⅰ) Fig.2 Typical Output Characteristics( Ⅱ)

10000

Ta= 25°C

Pulsed

)[mΩ]

on

(

DS

1000

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0.01 0.1 1

DRAIN-CURRENT : ID[A]

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)

VGS= 0.8V

VGS= 4.5V

VGS= 2.5V

VGS= 1.5V

VGS= 1.2V

VGS= 0.7V

VGS= 0.9V

VGS= 1.2V

VGS= 1.5V

VGS= 2.5V

VGS= 4.5V

Ta=25°C

Pulsed

0.2

[A]

D

VGS= 0.9V

0.1

VGS= 0.8V

DRAIN CURRENT : I

0

0246810

DRAIN-SOURCE VOLTAGE : VDS[V]

10000

VGS= 4.5V

Pulsed

)[mΩ]

on

(

DS

1000

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0.01 0.1 1

DRAIN-CURRENT : ID[A]

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)

VGS= 4.5V
V

= 2.5V

GS

V

= 1.5V

GS

V

= 1.2V

GS

Ta=25°C

Pulsed

VGS= 0.7V

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= 25°C

1

VDS= 10V

0.1

Pulsed

Ta= 125°C

Ta= 75°C

[A]

D

Ta= 25°C

Ta= 25°C

0.01

DRAIN CURRENT : I

0.001

0 0.2 0.4 0.6 0.8 1

GATE-SOURCE VOLTAGE : VGS[V]

Fig.3 Typical Transfer Characteristics

10000

VGS= 2.5V

Pulsed

)[mΩ]

on

(

DS

1000

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= 25°C

10000

VGS= 1.5V

Pulsed

)[mΩ]

on

(

DS

1000

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= 25°C

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)

10000

VGS= 1.2V

Pulsed

)[mΩ]

on

(

DS

1000

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅴ)

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= 25°C

3/5

10000

VGS= 0.9V

Pulsed

)[mΩ]

on

(

DS

1000

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅵ)

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= 25°C

2010.07 - Rev.A

Data Sheet

www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.

RYM002N05

10

VDS= 10V

Pulsed

1

Ta=25°C

Ta=25°C

Ta=75°C

Ta=125°C

0.1

0.01 0.1 1

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : ID[A]

Fig.10 Forward Transfer Admittance
vs. Drain Current

1000

100

t

d(off)

Ta=25°C

V

t

f

VGS=4.5V

RG=10Ω

Pulsed

10

SWITCHING TIME : t [ns]

t

t

d(on)

r

1

0.01 0.1 1

1

VGS=0V

[A]

s

Pulsed

0.1

Ta= 125°C

5000

4000

)[mΩ]

ON

(

DS

3000

Ta=25°C

Pulsed

ID= 0.01A

ID= 0.20A

2000

Ta= 75°C

SOURCE CURRENT : I

Ta= 25°C

Ta= 25°C

0.01

0 0.5 1 1.5

SOURCE-DRAIN VOLTAGE : VSD [V]

Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage

[V]

4

=25V

DD

GS

3

2

Ta=25°C

VDD=25V

1

ID= 0.2A

RG=10Ω

GATE-SOURCE VOLTAGE : V

0

Pulsed

0 0.5 1 1.5

1000

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0

02468

GATE-SOURCE VOLTAGE : VGS[V]

Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

1000

Ta=25°C

f=1MHz
V

=0V

GS

100

10

CAPACITANCE : C [pF]

C

rss

C

oss

1

0.01 0.1 1 10 100

C

iss

DRAIN-CURRENT : ID[A]

Fig.13 Switching Characteristics

TOTAL GATE CHARGE : Qg [nC]

Fig.14 Typical Capacitance
vs. Drain-Source Voltage

DRAIN-SOURCE VOLTAGE : VDS[V]

Fig.15 Typical Capacitance
vs. Drain-Source Voltage

4/5

2010.07 - Rev.A

Data Sheet

www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.

RYM002N05

F

it

S

%

V
V

 Measurement circuits

V

GS

D.U.T.

R

G

ig.1-1 Switching time measurement circu

D

I

V

D

R

L

V

DD

GS
DS

t

Pulse width

50%

10%

10% 10%

d(on)

t

on

90%

50%

90% 90

t

d(off)

t

r

t

off

Fig.1-2 Switching waveforms

t

f

 Notice

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.

5/5

2010.07 - Rev.A

Notes

No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.

The content specied herein is subject to change for improvement without notice.

The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.

Notice

The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, commu­nication devices, electronic appliances and amusement devices).

The Products specied in this document are not designed to be radiation tolerant.

While ROHM always makes ef forts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, re or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel­controller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology specied herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.

www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.

Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

R1010

A