ROHM RYM002N05 Technical data

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©2010 ROHM Co., Ltd. All rights reserved.

0.9V Drive Nch MOSFET

RYM002N05

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) High speed switing.

2) Small package(VMT3).

3) Ultra low voltage drive(0.9V drive).

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code T2L
Basic ordering unit (pieces) 8000

RYM002N05 

VMT3

Abbreviated symbol : QJ

(3)

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

D

50 V

8V

200 mA

*1

800 mA

125 mA

*1

800 mA

*2

150 mW

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a recommended land.

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a) 833  C / W

* Each terminal mounted on a recommended land.

Symbol Limits Unit

*

(1) Gate
(2) Source
(3) Drain

(1) (2)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

1/5

2010.07 - Rev.A

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

RYM002N05

 Electrical characteristics (Ta = 25C)

Parameter

Symbol Min. Typ. Max. Unit
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=8V, VDS=0V

50 - - V ID=1mA, VGS=0V

--1AVDS=50V, VGS=0V

0.3 - 0.8 V VDS=10V, ID=1mA

Conditions

- 1.6 2.2 ID=200mA, VGS=4.5V

- 1.7 2.4 ID=200mA, VGS=2.5V

Static drain-source on-state
resistance

R

DS (on)

- 2.0 2.8 ID=200mA, VGS=1.5V



- 2.2 3.3 ID=100mA, VGS=1.2V

- 3.0 9.0 ID=10mA, VGS=0.9V

iss

oss

rss

d(on)

d(off)

*

- 26 - pF VDS=10V

-6-pFV

GS

=0V

- 3 - pF f=1MHz

-5-nsI

*

*

-8-nsV

*

*

r

- 17 - ns RL=250

*

*

- 43 - ns RG=10

*

*

f

=100mA, VDD 25V

D

=4.5V

GS

Forward transfer admittance l Yfs l 0.2 - - S ID=200mA, VDS=10V
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=200mA, VGS=0V

Conditions

2/5

2010.07 - Rev.A