ROHM RYE002N05 Technical data
0.9V Drive Nch MOSFET
RYE002N05
z Structure z Dimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) High speed switing.
2) Small package(EMT3).
3) Ultra low voltage drive(0.9V drive).
z Application
Switching
z Packaging specifications z Inner circuit
Package Taping
Type
Code TCL
Basic ordering unit (pieces) 3000
RYE002N05 {
EMT3
(SC-75A)
<SOT-416>
Abbreviated symbol : QJ
(3)
z Absolute maximum ratings (Ta = 25°C)
Parameter
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Power dissipation P
Symbol Limits Unit
DSS
GSS
D
DP
S
SP
D
50 V
±8V
±200 mA
*1
±800 mA
125 mA
*1
800 mA
*2
150 mW
Channel temperature Tch 150 °C
Range of storage temperature Tstg −55 to +150 °C
*1 Pw≤10µs, Duty cycle≤1%
*2 Each terminal mounted on a recommended land.
z Thermal resistance
Parameter
Channel to Ambient Rth (ch-a) 833 °C / W
* Each terminal mounted on a recommended land.
Symbol Limits Unit
*
(1) Source
(2) Gate
(3) Drain
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1)(2)
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©2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.05 - Rev.B
RYE002N05
z Electrical characteristics (Ta = 25°C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
Conditions
--±10 µAVGS=±8V, VDS=0V
50 - - V ID=1mA, VGS=0V
--1µAVDS=50V, VGS=0V
0.3 - 0.8 V VDS=10V, ID=1mA
- 1.6 2.2 I
*
- 1.7 2.4 I
- 2.0 2.8 I
- 2.2 3.3 I
- 3.0 9.0 I
*
l 0.2 - - S ID=200mA, VDS=10V
- 26 - pF VDS=10V
-6-pFV
- 3 - pF f=1MHz
-5-nsI
*
*
-8-nsV
*
*
- 17 - ns RL=250Ω
*
*
- 43 - ns RG=10Ω
*
*
=200mA, VGS=4.5V
D
=200mA, VGS=2.5V
D
Ω
=200mA, VGS=1.5V
D
=100mA, VGS=1.2V
D
=10mA, VGS=0.9V
D
=0V
GS
=100mA, VDD 25V
D
=4.5V
GS
Data Sheet
zBody diode characteristics (Source-Drain) (Ta = 25°C)
Parameter
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.2 V Is=200mA, VGS=0V
Conditions
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©2011 ROHM Co., Ltd. All rights reserved.
2/5
2011.05 - Rev.B
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