ROHM RYC002N05 Technical data

Data Sheet

0.9V Drive Nch MOSFET

RYC002N05

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) High speed switing.

2) Small package(SST3).

3)Ultra low voltage drive(0.9V drive).

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code T316
Basic ordering unit (pieces) 3000

RYC002N05 

SST3

<SOT-23>

Abbreviated symbol : QJ

(3)

∗1

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

D

*1

*1

*2

50 V

8V

200 mA

800 mA

150 mA

800 mA

200 mW

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a recommended land.

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a) 625 C / W

* Each terminal mounted on a recommended land.

Symbol Limits Unit

*

(1) Source
(2) Gate
(3) Drain

∗2

(1)(2)

∗1 BODY DIODE
∗2 ESD PROTECTION DIODE

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Data Sheet

RYC002N05

 Electrical characteristics (Ta = 25C)

Parameter

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=8V, VDS=0V

50 - - V ID=1mA, VGS=0V

--1AVDS=50V, VGS=0V

0.3 - 0.8 V VDS=10V, ID=1mA

Conditions

- 1.6 2.2 ID=200mA, VGS=4.5V

- 1.7 2.4 ID=200mA, VGS=2.5V

Static drain-source on-state
resistance

R

DS (on)

*

- 2.0 2.8 ID=200mA, VGS=1.5V



- 2.2 3.3 ID=100mA, VGS=1.2V

- 3.0 9.0 ID=10mA, VGS=0.9V

iss

oss

rss

d(on)

d(off)

*

- 26 - pF VDS=10V

-6-pFV

GS

=0V

- 3 - pF f=1MHz

-5-nsI

*

*

-8-nsV

*

*

r

- 17 - ns RL=250

*

*

- 43 - ns RG=10

*

*

f

=100mA, VDD 25V

D

=4.5V

GS

Forward transfer admittance l Yfs l 0.2 - - S ID=200mA, VDS=10V

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=200mA, VGS=0V

Conditions

2/6

2011.03 - Rev.A

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Data Sheet

RYC002N05

Electrical characteristic curves (Ta=25C)

0

0.05

0.1

0.15

0.2

0 0.2 0.4 0.6 0.8 1

V

GS

= 4.5V

V

GS

= 2.5V

V

GS

= 1.5V

VGS= 1.2V

VGS= 0.9V

VGS= 0.8V

VGS= 0.7V

Ta=25°C
Pulsed

Fig.1 Typical Output Characteristics(Ⅰ)

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

[A]

0

0.05

0.1

0.15

0.2

0 2 4 6 8 10

VGS= 0.7V

VGS= 0.9V

VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V

VGS= 0.8V

Ta=25°C
Pulsed

Fig.2 Typical Output Characteristics(Ⅱ)

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

[A]

0.001

0.01

0.1

1

0 0.2 0.4 0.6 0.8 1

VDS= 10V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.3 Typical Transfer Characteristics

DRAIN CURRENT : I

D

[A]

GATE-SOURCE VOLTAGE : VGS[V]

100

1000

10000

0.001 0.01 0.1 1

V

GS

= 0.9V

V

GS

= 1.2V

V

GS

= 1.5V

V

GS

= 2.5V

VGS= 4.5V

.

Ta=25°C
Pulsed

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

100

1000

10000

0.001 0.01 0.1 1

VGS= 4.5V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

100

1000

10000

0.001 0.01 0.1 1

V

GS

= 2.5V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

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2011.03 - Rev.A