Datasheet RXH125N03 Datasheet (ROHM)

Data Sheet

4V Drive Nch MOSFET

RXH125N03

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

SOP8

Features

(8) (5)

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8).

(1)

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TB
Basic ordering unit (pieces) 2500

RXH125N03 

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

DSS

GSS

D

DP

S

SP

D

30 V

20 V

12.5 A

*1

36 A

1.6 A

*1

*2

36 A

2.0 W

(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

(4)

(8) (7) (6) (5)

∗2

∗1

(1) (2) (3) (4)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a) 62.5  C / W

*Mounted on a ceramic board.

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Symbol Limits Unit

*

1/6

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Data Sheet

RXH125N03

 Electrical characteristics (Ta = 25 C)

Parameter

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

Conditions

- 7.5 12.0 ID=12.5A, VGS=10V

Static drain-source on-state
resistance

R

DS (on)

*

- 9.5 13.3 ID=12.5A, VGS=4.5V

m

- 10.0 14.0 ID=12.5A, VGS=4.0V

iss

oss

rss

d(on)

d(off)

gd

*

- 1000 - pF VDS=10V

- 340 - pF VGS=0V

- 170 - pF f=1MHz

- 12 - ns ID=6.3A, VDD 15V

*

- 20 - ns VGS=10V

*

r

- 55 - ns RL=2.38

*

- 18 - ns RG=10

*

f

- 12.7 - nC ID=12.5A, VDD 15V

*

g

- 2.6 - nC VGS=5V

*

gs

- 6.0 - nC

*

Forward transfer admittance l Yfs l 9.0 - - S ID=12.5A, VDS=10V

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=12.5A, VGS=0V

Conditions

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Data Sheet

RXH125N03

Electrical characteristic curves (Ta=25C)

0

2.5

5

7.5

10

12.5

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=2.5V

VGS=3.0V

VGS=10.0V

VGS=4.0V

VGS=4.5V

Ta=25°C
Pulsed

0

2.5

5

7.5

10

12.5

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=2.5V

VGS=3.0V

VGS=10.0V

VGS=4.0V

VGS=4.5V

Ta=25°C
Pulsed

1

10

100

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.0V
VGS=4.5V

VGS=10V

Ta=25°C
Pulsed

1

10

100

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

1

10

100

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

1

10

100

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

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Data Sheet

RXH125N03

0.01

0.1

1

10

100

0.001 0.01 0.1 1 10 100

Forward Transfer Admittance

Y

fs

[S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0.001

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.8 Typical Transfer Characteristics

VDS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0

Source Current : I

s

[A]

Source-Drain Voltage : VSD [V]

Fig.9 Source Current vs. Source-Drain Voltage

VGS=0V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0

10

20

30

40

50

0 2 4 6 8 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Gate-Source Voltage : VGS [V]

Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

Ta=25

°C

pulsed

ID=12.5A

ID=6.3A

1

10

100

1000

10000

0.01 0.1 1 10 100

Switching Time : t [ns]

Drain Current : ID [A]

Fig.11 Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

VDD≒15V
V

GS

=10V

R

G

=10Ω

Ta=25

°C

Pulsed

0

2

4

6

8

10

0 5 10 15 20 25

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.12 Dynamic Input Characteristics

Ta=25°C
VDD=15V
ID=12.5A
Pulsed

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Data Sheet

RXH125N03

10

100

1000

10000

0.01 0.1 1 10 100

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.13 Typical Capacitance vs. Drain-Source Voltage

Ta=25°C
f=1MHz

VGS=0V

C

iss Coss Crss

0.01

0.1

1

10

100

0.1 1 10 100

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.14 Maximum Safe Operating Area

T

a

=25°C

Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)

Operation in this area is limited by R

DS(on)

(VGS = 10V)

PW = 100μs

PW = 1ms

PW = 10ms

DC Operation

0.0001

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r (t)

Pulse width : Pw (s)

Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width

Mounted on a ceramic board.
(30mm

× 30mm × 0.8mm)

Rth

(ch-a)

=62.5°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

Ta=25°C
Single Pulse

5/6

2011.03 - Rev.A

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Data Sheet

RXH125N03

S

%

V
V

V

S

 Measurement circuits

V

GS

R

G

Fig.1-1 Switching Time Measurement Circuit

VGS

IG(Const.)

Fig.2-1 Gate Charge Measurement Circuit

D.U.T.

D.U.T.

D

I

I

V

D

R

L

V

DD

D

VD

RL

VDD

Pulse width

50%

10%

GS
DS

10% 10%

90%

50%

90% 90

t

d(on)

t

on

t

d(off)

t

r

t

off

Fig.1-2　Switching Waveforms

V

G

Q

g

GS

QgsQ

gd

Charge

Fig.2-2 Gate Charge Waveform

t

f

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2011.03 - Rev.A

Notes

Notice

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