ROHM RXH125N03 Technical data

Data Sheet

4V Drive Nch MOSFET

RXH125N03

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

SOP8

Features

(8) (5)

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8).

(1)

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TB
Basic ordering unit (pieces) 2500

RXH125N03 

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

DSS

GSS

D

DP

S

SP

D

30 V

20 V

12.5 A

*1

36 A

1.6 A

*1

*2

36 A

2.0 W

(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

(4)

(8) (7) (6) (5)

∗2

∗1

(1) (2) (3) (4)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a) 62.5  C / W

*Mounted on a ceramic board.

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Symbol Limits Unit

*

1/6

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Data Sheet

RXH125N03

 Electrical characteristics (Ta = 25 C)

Parameter

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

Conditions

- 7.5 12.0 ID=12.5A, VGS=10V

Static drain-source on-state
resistance

R

DS (on)

*

- 9.5 13.3 ID=12.5A, VGS=4.5V

m

- 10.0 14.0 ID=12.5A, VGS=4.0V

iss

oss

rss

d(on)

d(off)

gd

*

- 1000 - pF VDS=10V

- 340 - pF VGS=0V

- 170 - pF f=1MHz

- 12 - ns ID=6.3A, VDD 15V

*

- 20 - ns VGS=10V

*

r

- 55 - ns RL=2.38

*

- 18 - ns RG=10

*

f

- 12.7 - nC ID=12.5A, VDD 15V

*

g

- 2.6 - nC VGS=5V

*

gs

- 6.0 - nC

*

Forward transfer admittance l Yfs l 9.0 - - S ID=12.5A, VDS=10V

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=12.5A, VGS=0V

Conditions

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2011.03 - Rev.A

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Data Sheet

RXH125N03

Electrical characteristic curves (Ta=25C)

0

2.5

5

7.5

10

12.5

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=2.5V

VGS=3.0V

VGS=10.0V

VGS=4.0V

VGS=4.5V

Ta=25°C
Pulsed

0

2.5

5

7.5

10

12.5

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=2.5V

VGS=3.0V

VGS=10.0V

VGS=4.0V

VGS=4.5V

Ta=25°C
Pulsed

1

10

100

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.0V
VGS=4.5V

VGS=10V

Ta=25°C
Pulsed

1

10

100

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

1

10

100

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

1

10

100

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

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2011.03 - Rev.A