ROHM RXH100N03 Technical data

Data Sheet

4V Drive Nch MOSFET

RXH100N03

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

SOP8

Features

(8) (5)

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8).

(1)

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TB
Basic ordering unit (pieces) 2500

RXH100N03 

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

DSS

GSS

D

DP

S

SP

D

*1

*1

*2

30 V

20 V

10 A

36 A

1.6 A

36 A

2.0 W

(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

(4)

(8) (7) (6) (5)

∗2

∗1

(1) (2) (3) (4)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a) 62.5 C / W

*Mounted on a ceramic board.

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Symbol Limits Unit

*

1/6

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Data Sheet

RXH100N03

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

- 9.5 13 I

*

-1217 I

-1318 I

*

l 8.0 - - S ID=10A, VDS=10V

- 800 - pF VDS=10V

- 270 - pF VGS=0V

- 140 - pF f=1MHz

- 10 - ns ID=5A, VDD 15V

*

- 45 - ns VGS=10V

*

- 50 - ns RL=3.0

*

- 15 - ns RG=10

*

- 11.0 - nC ID=10A, VDD 15V

*

- 2.4 - nC VGS=5V

*

- 4.8 - nC

*

m

D

D

D

=10A, VGS=10V

=10A, VGS=4.5V

=10A, VGS=4.0V

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=10A, VGS=0V

Conditions

2/6

2011.04 - Rev.A

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Data Sheet

RXH100N03

Electrical characteristic curves (Ta=25C)

0

2

4

6

8

10

0 0.2 0.4 0.6 0.8 1

VGS= 2.5V

V

GS

= 10V

V

GS

= 4.5V

V

GS

= 4.0V

V

GS

= 3.5V

Ta=25°C
Pulsed

Fig.1 Typical Output Characteristics(Ⅰ)

DRAIN CURRENT : I

D

[A]

DRAIN-SOURCE VOLTAGE : VDS[V]

0

2

4

6

8

10

0 2 4 6 8 10

V

GS

= 2.5V

V

GS

= 10V

V

GS

= 4.5V

V

GS

= 4.0V

VGS= 3.5V

Ta=25°C
Pulsed

Fig.2 Typical Output Characteristics(Ⅱ)

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

[A]

0.001

0.01

0.1

1

10

100

0 1 2 3

VDS= 10V
Pulsed

Ta=125°C

Ta=75°C
Ta=25°C

Ta=-25°C

Fig.3 Typical Transfer Characteristics

DRAIN CURRENT : I

D

[A]

GATE-SOURCE VOLTAGE : VGS[V]

1

10

100

0.1 1 10 100

V

GS

= 4.0V

V

GS

= 4.5V

VGS= 10V

.

Ta=25°C
Pulsed

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

1

10

100

0.1 1 10 100

VGS= 10V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

1

10

100

0.1 1 10 100

V

GS

= 4.5V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

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2011.04 - Rev.A