Datasheet RXH090N03 Datasheet (ROHM)

Data Sheet

4V Drive Nch MOSFET

RXH090N03

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

SOP8

Features

(8) (5)

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8).

(1)

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

RXH090N03 

 Absolute maximum ratings (Ta = 25C)

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Power dissipation P

Code TB
Basic ordering unit (pieces) 2500

Parameter

Continuous I

Pulsed I
Continuous I

Pulsed I

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

D

*1

*1

*2

30 V

20 V

9A

36 A

1.6 A

36 A

2.0 W

(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

(4)

(8) (7) (6) (5)

∗2

∗1

(1) (2) (3) (4)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a) 62.5 C / W

*Mounted on a ceramic board.

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Symbol Limits Unit

*

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2011.04 - Rev.A

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Data Sheet

RXH090N03

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-1217 I

*

-1724 I

-1927 I

*

l 5.0 - - S ID=9A, VDS=10V

m

D

D

D

=9A, VGS=10V

=9A, VGS=4.5V

=9A, VGS=4.0V

- 440 - pF VDS=10V

- 170 - pF VGS=0V

- 85 - pF f=1MHz

-8-nsI

*

- 30 - ns VGS=10V

*

- 30 - ns RL=3.32

*

-8-nsR

*

- 6.8 - nC ID=9A, VDD 15V

*

- 1.6 - nC VGS=5V

*

- 2.6 - nC

*

=4.5A, VDD 15V

D

=10

G

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=9A, VGS=0V

Conditions

2/6

2011.04 - Rev.A

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Data Sheet

RXH090N03

Electrical characteristic curves (Ta=25C)

0

1

2

3

4

5

6

7

8

9

0 0.2 0.4 0.6 0.8 1

VGS= 2.5V

V

GS

= 10V

V

GS

= 4.5V

V

GS

= 4.0V

VGS= 2.8V

Ta=25°C
Pulsed

Fig.1 Typical Output Characteristics(Ⅰ)

DRAIN CURRENT : I

D

[A]

DRAIN-SOURCE VOLTAGE : VDS[V]

0

1

2

3

4

5

6

7

8

9

0 2 4 6 8 10

V

GS

= 10V

VGS= 4.5V
VGS= 4.0V

VGS= 2.5V

VGS= 2.8V

Ta=25°C
Pulsed

Fig.2 Typical Output Characteristics(Ⅱ)

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

[A]

0.001

0.01

0.1

1

10

0 1 2 3

VDS= 10V
Pulsed

Ta=125°C

Ta=75°C
Ta=25°C

Ta=-25°C

Fig.3 Typical Transfer Characteristics

DRAIN CURRENT : I

D

[A]

GATE-SOURCE VOLTAGE : VGS[V]

1

10

100

1000

0.1 1 10

V

GS

= 4.0V

V

GS

= 4.5V

VGS= 10V

Ta=25°C
Pulsed

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[mΩ]

1

10

100

1000

0.1 1 10

VGS= 10V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[mΩ]

1

10

100

1000

0.1 1 10

V

GS

= 4.5V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[mΩ]

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Data Sheet

RXH090N03

1

10

100

1000

0.1 1 10

VGS= 4.0V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[mΩ]

0.1

1

10

100

0.01 0.1 1 10

V

DS

= 10V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.8 Forward Transfer Admittance
vs. Drain Current

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : ID[A]

0.01

0.1

1

10

0 0.5 1 1.5

V

GS

=0V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage

SOURCE CURRENT : Is [A]

SOURCE-DRAIN VOLTAGE : VSD [V]

0

10

20

30

40

50

0 2 4 6 8 10

ID= 9.0A

ID= 4.5A

Ta=25°C
Pulsed

Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(ON)[mΩ]

GATE-SOURCE VOLTAGE : VGS[V]

Fig.11 Switching Characteristics

SWITCHING TIME : t [ns]

DRAIN-CURRENT : ID[A]

0

2

4

6

8

10

0 2 4 6 8 10 12 14

Ta=25°

C

V

DD

= 15V

I

D

= 9A

Pulsed

Fig.12 Dynamic Input Characteristics

GATE-SOURCE VOLTAGE : V

GS

[V]

TOTAL GATE CHARGE : Qg [nC]

1

10

100

1000

0.01 0.1 1 10

t

f

t

d(on)

t

d(off)

t

r

Ta=25°C
VDD= 15V
VGS=10V
RG=10W
Pulsed

4/6

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Data Sheet

RXH090N03

10

100

1000

10000

0.01 0.1 1 10 100

C

iss

C

rss

Ta=25°

C

f=1MHz
VGS=0V

C

oss

Fig.13 Typical Capacitance
vs. Drain-Source Voltage

DRAIN-SOURCE VOLTAGE : VDS[V]

CAPACITANCE : C [pF]

0.01

0.1

1

10

100

1000

0.1 1 10 100

PW = 10ms

DC operation

Operation in this area is limited by R

DS(ON)

(V

GS

=10V)

PW=100us

PW=1ms

Ta=25°C
Single Pulse

Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)

Fig.14 Maximum Safe Operating Aera

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

[A]

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth

(ch-a)

=62.5°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

Ta=25°C
Single Pulse

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

PULSE WIDTH : Pw(s)

NORMARIZED TRANSIENT THERMAL

RESISTANCE : r (t)

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2011.04 - Rev.A

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Data Sheet

RXH090N03

S

%

V
V

V

S

 Measurement circuits

V

GS

R

G

Fig.1-1 Switching Time Measurement Circuit

V

GS

I

G(Const.)

D.U.T.

D.U.T.

D

I

I

V

D

R

L

V

DD

D

V

R

L

V

DD

GS
DS

t

Fig.1-2　Switching Waveforms

V

D

GS

Pulse width

50%

10%

10% 10%

90% 90

d(on)

t

G

QgsQ

t

r

on

Q

g

gd

90%

t

d(off)

t

off

50%

t

f

Charge

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

 Notice

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.

6/6

2011.04 - Rev.A

Notes

Notice

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