ROHM RW1E015RP Technical data

C

4V Drive Pch MOSFET

RW1E015RP

zStructure zDimensions (Unit : mm)

Silicon P-channel MOSFET

zFeatures

1) Low on-resistance.

2) Space saving, high power package.

3) Low voltage drive. (4V)

zApplications

Switching
zInner circuit

zPackaging specifications

Type

RW1E015RP

Package
Code
Basic ordering unit (pieces)

Taping

T2R

8000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

Limits Unit

−30
±20

±1.5

∗1

±6

−0.5

∗1

−6

∗2

0.7

150

−55 to +150

zThermal resistance

Parameter

hannel to ambient

∗ When mounted on a ceramic board.

Symbol Limits Unit

Rth(ch-a)

∗

179

WEMT6

Abbreviated symbol : UJ

(6)

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

°C / W

(6) (5) (4)

(1) (2) (3)

(5)

∗2

(2)

(4)

∗1

(1) Drain
(2) Drain
(3) Gate

(3)

(4) Source
(5) Drain
(6) Drain

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2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.A

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min.−Typ. Max.

I

GSS

−±10 µAVGS=±20V, VDS=0V

−30 −−VID= −1mA, VGS=0V

I

DSS

GS (th)

DS (on)

−−−1 µAV

−1.0 −−2.5 V V

− 115 160 I

∗

− 170 240 mΩ

− 190 270 I

∗

1.2 −−SV

Y

fs

C

C
C

t

d (on)

t

d (off)

Q

Q

Q

− 230 − pF V

iss

− 4033− pF V

oss

−

rss

∗

∗

t

r

∗

∗

t

f

∗

g

∗

gs

∗

gd

12

−

8

−

40

−

13

−

3.2

−

1.2

−

0.7

−−nC

Min. Typ. Max.

∗

V

SD

−−−1.2 V IS= −1.5A, VGS=0VForward voltage

− pF f=1MHz

− ns

− ns

− ns

− ns

− nC

− nC

Unit

DS
DS

= −1.5A, VGS= −10V

mΩ

D

= −0.7A, VGS= −4.5V

I

D

= −0.7A, VGS= −4V

mΩ

D

DS
DS
GS

VDD −15V

ID= −0.7A

GS

V

L

R
R

G

=10Ω

V

DD

I

= −1.5A

D

V

GS

Unit

Conditions

= −30V, VGS=0V
= −10V, ID= −1mA

= −10V, ID= −1.5A
= −10V
=0V

= −10V

21.4Ω

−15V

R
R

L

10Ω

G

=10Ω

= −5V

Conditions

Data Sheet RW1E015RP

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○

2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.A