Datasheet RW1E015RP Datasheet (ROHM)

C

4V Drive Pch MOSFET

RW1E015RP

zStructure zDimensions (Unit : mm)

Silicon P-channel MOSFET

zFeatures

1) Low on-resistance.

2) Space saving, high power package.

3) Low voltage drive. (4V)

zApplications

Switching
zInner circuit

zPackaging specifications

Type

RW1E015RP

Package
Code
Basic ordering unit (pieces)

Taping

T2R

8000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

Limits Unit

−30
±20

±1.5

∗1

±6

−0.5

∗1

−6

∗2

0.7

150

−55 to +150

zThermal resistance

Parameter

hannel to ambient

∗ When mounted on a ceramic board.

Symbol Limits Unit

Rth(ch-a)

∗

179

WEMT6

Abbreviated symbol : UJ

(6)

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

°C / W

(6) (5) (4)

(1) (2) (3)

(5)

∗2

(2)

(4)

∗1

(1) Drain
(2) Drain
(3) Gate

(3)

(4) Source
(5) Drain
(6) Drain

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2009.06 - Rev.A

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min.−Typ. Max.

I

GSS

−±10 µAVGS=±20V, VDS=0V

−30 −−VID= −1mA, VGS=0V

I

DSS

GS (th)

DS (on)

−−−1 µAV

−1.0 −−2.5 V V

− 115 160 I

∗

− 170 240 mΩ

− 190 270 I

∗

1.2 −−SV

Y

fs

C

C
C

t

d (on)

t

d (off)

Q

Q

Q

− 230 − pF V

iss

− 4033− pF V

oss

−

rss

∗

∗

t

r

∗

∗

t

f

∗

g

∗

gs

∗

gd

12

−

8

−

40

−

13

−

3.2

−

1.2

−

0.7

−−nC

Min. Typ. Max.

∗

V

SD

−−−1.2 V IS= −1.5A, VGS=0VForward voltage

− pF f=1MHz

− ns

− ns

− ns

− ns

− nC

− nC

Unit

DS
DS

= −1.5A, VGS= −10V

mΩ

D

= −0.7A, VGS= −4.5V

I

D

= −0.7A, VGS= −4V

mΩ

D

DS
DS
GS

VDD −15V

ID= −0.7A

GS

V

L

R
R

G

=10Ω

V

DD

I

= −1.5A

D

V

GS

Unit

Conditions

= −30V, VGS=0V
= −10V, ID= −1mA

= −10V, ID= −1.5A
= −10V
=0V

= −10V

21.4Ω

−15V

R
R

L

10Ω

G

=10Ω

= −5V

Conditions

Data Sheet RW1E015RP

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2009.06 - Rev.A

V

V

V

V

zElectrical characteristics curves

3

2.5

[A]

D

2

1.5

1

DRAIN CURRENT : -I

0.5

0

00.20.40.60.81

DR AIN-SOU RCE VOLT AGE : -VDS[V]

Fi g.1 T ypic al Output Charac teri stic s(Ⅰ) Fi g.2 Typic al Output Char acteri stics (Ⅱ)

VGS= -10
VGS= -8.0
VGS= -4.5
VGS= -4.0

VGS= -3.0V

Ta=25°C
Pulsed

3

2.5

[A]

D

2

1.5

1

DRAIN CURRENT : -I

0.5

0

024 6810

DRAIN-SOURCE VOLTAGE : -V

VGS= -10V

VGS= -3.0V

VGS= -4.5V
V

= -4.0V

GS

VGS= -2.8V

Ta= 25°C
Pulsed

DS

Data Sheet RW1E015RP

10

VDS= -10V
Pulsed

[A]

D

1

Ta= 125°C

Ta= 75°C

0.1
Ta= 25°C

Ta= - 25°C

DRAIN CURRENT : -I

0.01

0.001
01234

[V]

GATE- SOURC E VOLTAGE : - VGS[V]

Fi g.3 Typic al Tr ansfer Charac teris tics

1000

Ta= 25°C
Pulsed

]

Ω

(on)[m

DS

100

RESIST ANCE : R

STATIC DRAIN- SOURC E ON-STAT E

10

0.1110

DRAIN-CURRENT : -I

Fi g.4 St atic D rain -Sourc e On-St ate

Resistance vs. Drain Cur rent(Ⅰ)

1000

VGS= -4.0V
Pulsed

]

Ω

(on)[m

DS

100

RESIST ANCE : R

STATIC DRAIN- SOURC E ON-STAT E

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fi g.7 St atic D rain -Sourc e On-St ate

Resistance vs. Drain Cur rent(Ⅳ)

VGS= -4.0V
V

= -4.5V

GS

V

= -10V

GS

[A]

D

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

1000

VGS= -10V

]

Pulsed

Ω

(on)[m

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fi g.5 Stati c Drai n-Sourc e On-State

Resistance vs. Drain Cur rent(Ⅱ)

10

VDS= -10V
Pulsed

1

0.1

0.01 0.1 1 10

FOR WARD TRAN SFER ADM ITTAN CE : |Yfs| [S]

DRAIN-CURRENT : -ID[A]

Fig.8 Forward Transfer Admittance
vs. Drain Curr ent

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C

1000

VGS= -4.5V

]

Pulsed

Ω

(on)[m

DS

100

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fi g.6 Stati c Drai n-Sourc e On-State

Resistance vs. Drain Cur rent(Ⅲ)

10

VGS=0V
Pulsed

1

0.1

REVERSE DRAIN CURRENT : -Is [A]

0.01

00.511.5

SOURCE-DRAIN VOLTAGE : -VSD [V]

Fi g.9 Revers e Drai n Curr ent
vs. Sourse-D rain Voltage

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

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2009.06 - Rev.A

Fig.1-1 Switching Time Measurement Circuit

%

V

V

F

it

V

Data Sheet RW1E015RP

500

]

Ω

400

(ON)[m

DS

300

200

RESISTAN CE : R

100

STATIC DRAIN- SOURC E ON-STAT E

0

0 5 10 15

Fi g.10 Stati c Dr ain-Sour ce On-Stat e
Resistance vs. Gate Source Voltage

ID= -1.5A

ID= -0.7A

GATE- SOURCE VOLTAGE : -VGS[V]

1000

100

CAPACITANCE : C [pF]

Ta=25°C
f=1M Hz
V

=0V

GS

10

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : -V

Fi g.13 T ypi cal C apacitanc e
vs. Drain-Source Voltag e

zMeasurement circuit

V

GS

I

D

D.U.T.

R

G

Crss

Coss

Ta=25°C
Puls ed

Ciss

[V]

DS

R

L

V

DD

1000

td(off)

100

td(on)

10

SWITC HING TIME : t [ns]

1

0.01 0. 1 1 10

Fig.11 Switching Characteristics

t

f

DRAIN-CURRENT : -ID[A]

Ta= 25°C

= -15V

V

DD

V

= -10V

GS

=10Ω

R

G

Pulsed

t

r

10

[V]

GS

8

6

4

2

GATE-SO URCE VOLTAGE : - V

0

01234567

TOTAL GATE CH ARGE : Qg [nC]

Fi g.12 D ynamic Input Charac teris tics

Ta= 25°C
V

DD

= -1.5A

I

D

R

G

Pulsed

= -15V

=10Ω

Pulse Width

GS

V

DS

10%

50%

90%

50%

10% 10

DS

t

90% 90%

d(on)

tr

t

on

t

d(off)

tf

t

off

D

I

D.U.T.

I

G(Const)

V

GS

R

G

ig.2-1 Gate Charge Measurement Circu

zNotice

This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

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Fig.1-2 Switching Waveforms

V

G

V

DS

R

L

V

DD

GS

QgsQ

Q

g

gd

Charge

Fig.2-2 Gate Charge Waveform

2009.06 - Rev.A

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