ROHM RW1C020UN Technical data

1.5V Drive Nch MOSFET

RW1C020UN

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low On-resistance.

2) Built-in G-S Protection Diode.

3) Space Saving,
Small Surface Mount Package (WEMT6).

4) Low voltage drive (1.5V drive).

zApplications zInner circuit

Switching

zPackaging specifications

WEMT6

(6) (5) (4)

(1) (2) (3)

Abbreviated symbol : XK

∗2

(4)(5)(6)

Type

Package
Code
Basic ordering unit (pieces)

Taping

T2R

8000

RW1C020UN

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Symbol

DSS
GSS

D

DP

S

SP

D

zThermal resistance

Parameter Symbol Limits Unit

Channel to ambient

∗ When mounted on a ceramic board

Rth (ch-a) 179

Limits Unit

20

±10

∗1

∗1
∗2

±2
±6

0.5
6

0.7

∗

VV
VV
AI
AI
AI
AI

WP

°CTch 150
°CTstg −55 to +150

°C / W

(2)(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗1

(1) Drain
(2) Drain
(3) Gate

(3)

(4) Source
(5) Drain
(6) Drain

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2009 ROHM Co., Ltd. All rights reserved.

1/4

2009.05 - Rev.A

RW1C020UN

zElectrical characteristics (Ta=25°C)

Data Sheet

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage

V

(BR) DSS

V

Min. Typ. Max.

I

GSS

I

DSS

0.3 − 1.0 V V

GS (th)

−−±10 µAV

20 −−VID= 1mA, VGS=0V

−−1 µAV

− 75 105 I

Static drain-source on-state
resistance

R

DS (on)

− 95 135 mΩ

∗

− 170 240 I

C

C
C

t

d (on)

t

d (off)

Q

Q

∗

Y

1.8 −−SV

fs

− 180 − pF V

iss

− 4525− pF V

oss

−

rss

∗

∗

t

r

∗

∗

t

f

∗

Q

g

∗

gs

∗

gd

6

−

17

−

30

−

30

−

2.0

−

0.6

−

0.4

−−

− pF f=1MHz

− ns

− ns

− ns

− ns

− nC

−

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time

Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min. Typ. Max.

∗

V

SD

−−1.2 VForward voltage IS= 2A, VGS=0V

Unit

mΩ

D

I

D

Conditions

= ±10V, VDS=0V

GS

= 20V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 2A, VGS= 4.5V
= 2A, VGS= 2.5V

mΩ− 130 185 ID= 1A, VGS= 1.8V

= 0.4A, VGS= 1.5V

mΩ

D

= 10V, ID= 2A

DS

= 10V

DS

=0V

GS

V

DD

10V

ID= 1A
V

GS

= 4.5V

L

10Ω

R

G

=10Ω

R

10V

V

DD

= 2A

I

D

nC
nC

Unit

V
R
R

= 4.5V

GS

L

5Ω

G

=10Ω

Conditions

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c

○

2009 ROHM Co., Ltd. All rights reserved.

2/4

2009.05 - Rev.A