Datasheet RW1C020UN Datasheet (ROHM)

1.5V Drive Nch MOSFET

RW1C020UN

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low On-resistance.

2) Built-in G-S Protection Diode.

3) Space Saving,
Small Surface Mount Package (WEMT6).

4) Low voltage drive (1.5V drive).

zApplications zInner circuit

Switching

zPackaging specifications

WEMT6

(6) (5) (4)

(1) (2) (3)

Abbreviated symbol : XK

∗2

(4)(5)(6)

Type

Package
Code
Basic ordering unit (pieces)

Taping

T2R

8000

RW1C020UN

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Symbol

DSS
GSS

D

DP

S

SP

D

zThermal resistance

Parameter Symbol Limits Unit

Channel to ambient

∗ When mounted on a ceramic board

Rth (ch-a) 179

Limits Unit

20

±10

∗1

∗1
∗2

±2
±6

0.5
6

0.7

∗

VV
VV
AI
AI
AI
AI

WP

°CTch 150
°CTstg −55 to +150

°C / W

(2)(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗1

(1) Drain
(2) Drain
(3) Gate

(3)

(4) Source
(5) Drain
(6) Drain

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1/4

2009.05 - Rev.A

RW1C020UN

zElectrical characteristics (Ta=25°C)

Data Sheet

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage

V

(BR) DSS

V

Min. Typ. Max.

I

GSS

I

DSS

0.3 − 1.0 V V

GS (th)

−−±10 µAV

20 −−VID= 1mA, VGS=0V

−−1 µAV

− 75 105 I

Static drain-source on-state
resistance

R

DS (on)

− 95 135 mΩ

∗

− 170 240 I

C

C
C

t

d (on)

t

d (off)

Q

Q

∗

Y

1.8 −−SV

fs

− 180 − pF V

iss

− 4525− pF V

oss

−

rss

∗

∗

t

r

∗

∗

t

f

∗

Q

g

∗

gs

∗

gd

6

−

17

−

30

−

30

−

2.0

−

0.6

−

0.4

−−

− pF f=1MHz

− ns

− ns

− ns

− ns

− nC

−

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time

Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min. Typ. Max.

∗

V

SD

−−1.2 VForward voltage IS= 2A, VGS=0V

Unit

mΩ

D

I

D

Conditions

= ±10V, VDS=0V

GS

= 20V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 2A, VGS= 4.5V
= 2A, VGS= 2.5V

mΩ− 130 185 ID= 1A, VGS= 1.8V

= 0.4A, VGS= 1.5V

mΩ

D

= 10V, ID= 2A

DS

= 10V

DS

=0V

GS

V

DD

10V

ID= 1A
V

GS

= 4.5V

L

10Ω

R

G

=10Ω

R

10V

V

DD

= 2A

I

D

nC
nC

Unit

V
R
R

= 4.5V

GS

L

5Ω

G

=10Ω

Conditions

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2/4

2009.05 - Rev.A

RW1C020UN

zElectrical characteristics curves

4

3

[A]

D

2

1

DRAIN CURRENT : I

0

0 0.2 0.4 0.6 0.8 1

Fi g.1 Typic al Output C haracter isti cs(Ⅰ) Fig .2 Typical Output Characteris tics(Ⅱ)

VGS= 1.8V

VGS= 1.3V

DR AIN-SOUR CE VOLTAGE : VDS[V]

VGS= 10V
V

= 4.5V

GS

= 2.5V

V

GS

VGS= 1.5V

VGS= 1.2V

Ta= 25°C
Pulsed

4

VGS= 4.5V
V

= 2.5V

[A]

D

3

2

DRAIN CURRENT : I

1

0

02 46810

DR AIN-SOUR CE VOLTAGE : V

GS

= 1.8V

V

GS

Ta=25°C
Pulsed

VGS= 1.5V

VGS= 1.3V

VGS= 1.2V

DS

[V]

10

VDS= 10V
Pulsed

[A]

D

1

Ta= 125°C

Ta= 75°C

Ta= 25°C
Ta= - 25°C

0.1

DRAIN CURRENT : I

0.01

0.001

00.511.52

GATE-SOURCE VOLTAGE : VGS[V]

Fi g.3 Typic al Tr ansfer C haracter isti cs

Data Sheet

1000

Ta= 25°C
Puls ed

]

Ω

(on) [m

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : I

Fi g.4 Stati c Dr ain-Sour ce On-St ate

Resistance vs. Drain C urr ent(Ⅰ)

1000

VGS= 1.8V
Pulsed

]

Ω

(on) [m

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0. 1 1 10

DRAIN-CURRENT : I

Fi g.7 Stati c Dr ain-Sour ce On-St ate

Resistance vs. Drai n Curr ent(Ⅳ)

VGS= 1.5V

= 1.8V

V

GS

= 2.5V

V

GS

= 4.5V

V

GS

[A]

D

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

[A]

D

1000

VGS= 4.5V
Puls ed

]

Ω

(on)[m

DS

100

RESISTAN CE : R

STATIC DRAIN -SOURC E ON-STAT E

10

0.01 0. 1 1 10

DRAIN-CURRENT : ID[A]

Fi g.5 Stati c Dr ain-Sour ce On-St ate

Resistance vs. Drain C urr ent(Ⅱ)

1000

VGS= 1.5V
Puls ed

]

Ω

(on) [m

DS

100

RESISTAN CE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : I

Fi g.8 Stati c Dr ain-Sour ce On-St ate

Resistance vs. Drain C urrent(Ⅴ)

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

[A]

D

1000

VGS= 2.5V
Pulsed

]

Ω

(on)[m

DS

100

RESISTAN CE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.6 Stati c Dr ain-Sour ce On-St ate

Resistance vs. Drain C urr ent(Ⅲ)

10

VDS= 10V
Pulsed

1

FOR WARD T RANSFER

ADMIT TANCE : |Yfs| [S]

0.1

0.01 0. 1 1 10

DRAIN-CURRENT : ID[A]

Fi g.9 For ward Tr ansfer Admi ttance
vs. Drain Curr ent

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C

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3/4

2009.05 - Rev.A

Fig.1-1 Switching Time Measurement Circuit

%

%

V
V

Pulse Width

Fig.2-1 Gate Charge Measurement Circuit

S

Fig.2-2 Gate Charge Waveform

V

RW1C020UN

10

VGS=0V
Pulsed

1

0.1

REVERSE DRAIN CURRENT : Is [A]

0.01

00.511.5

SOUR CE-D RAIN VOLT AGE : VSD [V]

Fi g.10 R evers e Drai n Curr ent
vs. Sourse-D rain Voltage

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta=-25°C

5

[V]

GS

4

3

2

1

GATE- SOURC E VOLTAGE : V

0

00.511.522.53

TOTAL GATE CHARGE : Qg [nC]

Fi g.13 D ynamic Input C haracter isti cs

Ta= 25°C
V

DD

= 2A

I

D

R

=10Ω

G

Pulsed

zMeasurement circuit

= 10V

300

]

250

Ω

200

(ON)[m

DS

150

100

RESIST ANCE : R

50

STATI C DRAIN -SOUR CE ON- STATE

0

02 46810

GATE- SOURC E VOLTAGE : VGS[V]

Fi g.11 Stati c Dr ain-Sour ce On-St ate
R esis tance vs. Gate Source Voltage

1000

100

CAPAC ITANCE : C [pF]

Ta=25°C
f=1MH z
V

=0V

GS

10

0.01 0. 1 1 10 100

ID= 2.0A

ID= 1.0A

Coss

Crss

DR AIN-SOU RCE VOLT AGE : V

Fi g.14 Typic al Capac itanc e
vs. Dr ain-Source Voltag e

Ta= 25°C
Pulsed

Ciss

[V]

DS

1000

td(off)

100

10

SWIT CHIN G TIME : t [ns]

1

0.01 0.1 1 10

Fi g.12 Swit chi ng C haracter isti cs

t

f

t

r

DRAIN-CURRENT : ID[A]

Ta=25°C

= 10V

V

DD

=4.5V

V

GS

R

=10Ω

G

Pulsed

td(on)

Data Sheet

I

G (Const.)

zNotice

This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

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2009 ROHM Co., Ltd. All rights reserved.

V

GS

R

G

D

I

D.U.T.

V

DS

10%

R

L

V

DD

GS
DS

10%

t

d(on)

t

on

Fig.1-2 Switching Waveforms

90%
t

r

90%

t

d(off)

50%50%

10

90
t

r

t

off

VG

V

GS

R

G

D

I

D.U.T.

V

D

R

L

V

DD

GS

Q

gs

g

Q

Q

gd

Charge

4/4

2009.05 - Rev.A

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Examples of application circuits, circuit constants and any other information contained herein
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