ROHM RW1C015UN Technical data

1.5V Drive Nch MOSFET

RW1C015UN

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low On-resistance.

2) High power package.
Low voltage drive. (1.5V)

zApplications

Switching

zPackaging specifications zInner circuit

Type

RW1C015UN

Package
Code
Basic ordering unit (pieces)

Taping

T2R

8000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Symbol

DSS
GSS

D

DP

S

SP

D

Limits Unit

20

±10

±1.5

∗1

±3

0.5

∗1
∗2

3

0.7

VV
VV
AI
AI
AI
AI

WP

°CTch 150
°CTstg −55 to +150

zThermal resistance

Parameter Symbol Limits Unit

Channel to ambient

∗ When mounted on a ceramic board

Rth (ch-a) 179

∗

°C / W

WEMT6

(6) (5) (4)

(1) (2) (3)

Abbreviated symbol : PS

∗2

(2)(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(4)(5)(6)

∗1

(3)

(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain

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2009.05 - Rev.A

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time

Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

∗

Min. Typ. Max.

−−±10 µAV

20 −−VID= 1mA, VGS=0V

−−1 µAV

0.3 − 1.0 V V

− 130 180 I

− 170 240 mΩ

− 300 600 I

1.6 −−SV

− 110 − pF V

− 1815− pF V

−

−

−

−

−

−

−

−−

− pF f=1MHz

5

− ns

5

− ns

20

− ns

3

− ns

1.8

− nC

0.3

−

0.3

Min. Typ. Max.

−−1.2 VForward voltage IS= 1.5A, VGS=0V

Unit

mΩ

D

I

D

Conditions

= ±10V, VDS=0V

GS

= 20V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 1.5A, VGS= 4.5V

= 1.5A, VGS= 2.5V
mΩ− 220 310 ID= 0.8A, VGS= 1.8V
mΩ

= 0.3A, VGS= 1.5V

D

= 10V, ID= 1.5A

DS

= 10V

DS

=0V

GS

V

DD

10V

ID= 1A
V

GS

= 4.5V

L

10Ω

R

G

=10Ω

R

10V

V

DD

I

= 1.5A

D

nC
nC

Unit

V

GS

R

L

R

G

= 4.5V

6.7Ω
=10Ω

Conditions

Data Sheet RW1C015UN

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2009 ROHM Co., Ltd. All rights reserved.

2009.05 - Rev.A