C
1.5V Drive Pch MOSFET
RW1A013ZP
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplication zInner circuit
Switching
zPackaging specifications
Type
RW1A013ZP
Package
Code
Basic ordering unit (pieces)
Taping
T2R
8000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
D
Limits Unit
−12
±10
±1.3
∗1
±2.6
−0.5
∗1
−2.6
∗2
0.7
150
−55 to +150
zThermal resistance
Parameter
hannel to ambient
∗ When mounted on a ceramic board
Symbol Limits Unit
Rth(ch-a)
∗
179
WEMT6
Abbreviated symbol : XC
(6)
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
°C / W
(6) (5) (4)
(1) (2) (3)
(5)
∗2
(2)
(4)
∗1
(1) Drain
(2) Drain
(3) Gate
(3)
(4) Source
(5) Drain
(6) Drain
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗Pulsed
Min.−Typ. Max.
I
GSS
−±10 µAVGS=±10V, VDS=0V
−12 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
−−−1 µAV
−0.3 −−1.0 V V
− 190 260 I
∗
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
− 280 390 mΩ
− 400 600 I
∗
1.4 −−SV
fs
− 290 − pF V
iss
− 2821− pF V
oss
−
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
8
−
10
−
30
−
9
−
2.4
−
0.6
−
0.4
−−nC
Min. Typ. Max.
∗
V
SD
−−−1.2 V IS= −1.3A, VGS=0VForward voltage
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC
Unit
mΩ
mΩ
DS
DS
D
I
D
D
Conditions
= −12V, VGS=0V
= −6V, ID= −1mA
= −1.3A, VGS= −4.5V
= −0.6A, VGS= −2.5V
= −0.6A, VGS= −1.8V
mΩ− 530 1060 ID= −0.2A, VGS= −1.5V
= −6V, ID= −1.3A
DS
= −6V
DS
=0V
GS
V
DD
−6V
ID= −0.6A
V
GS
= −4.5V
L
10Ω
R
R
G
=10Ω
R
L
4.6Ω
R
G
=10Ω
Conditions
Unit
V
DD
I
= −1.3A
D
V
GS
−6V
= −4.5V
Data Sheet RW1A013ZP
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
V
V
V
V
V
V
V
V
V
V
V
zElectrical characteristics
2
Ta=25°C
Pulsed
[A]
D
1.5
1
DRAIN CURRENT : -I
0.5
0
0 0.2 0. 4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical Output Characteristics(Ⅰ) Fig .2 Typical Output Characteristi cs(Ⅱ)
VGS= -10V
V
GS
VGS= -2.5
VGS= -1.8
= -4.5
VGS= -1.5
VGS= -1.2
2
VGS= -4.5
[A]
D
1.5
1
DRAIN CURRENT : -I
0.5
0
0246 810
VGS= -2.5
VGS= -1.8
VGS= -1.5
VGS= -1.2
VGS= -1.0
Ta=25°C
Pulsed
10
VDS= -6V
Pulsed
1
[A]
D
Ta= 125°C
Ta= 75°C
0.1
Ta= 25°C
Ta= - 25°C
0.01
DRAIN CURRENT : -I
0.001
00.511.52
GATE-SOURCE VOLTAGE : -VGS[V]
Fi g.3 T ypic al Tr ansfer C haract eris tics
Data Sheet RW1A013ZP
10000
Ta= 25°C
Pulsed
]
Ω
1000
(ON)[m
DS
100
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.01 0.1 1 10
DRAIN-CURRENT : -I
Fi g.4 Stat ic D rain- Source O n-State
Resistance vs. Drain Curr ent(Ⅰ)
10000
VGS= -1.8V
Pulsed
]
Ω
1000
(ON)[m
DS
100
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.01 0.1 1 10
DRAIN-CURRENT : -ID[A]
Fi g.7 Stat ic D rain- Source O n-State
Resistance vs. Drain Curr ent(Ⅳ)
VGS= -1.5V
V
V
V
GS
GS
GS
= -1.8V
= -2.5V
= -4.5V
D
Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10000
VGS= -4.5V
Pulsed
]
Ω
1000
(ON)[m
DS
100
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.01 0.1 1 10
[A]
10000
]
Ω
1000
(ON)[m
DS
100
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
DRAIN-CURRENT : -ID[A]
Fi g.5 Static Drai n-Source On- State
Resi stance vs. Drai n Curr ent(Ⅱ)
VGS= -1.5V
Pulsed
0.01 0.1 1 10
DRAIN-CURRENT : -I
Fi g.8 Stat ic D rain- Source O n-State
Resistance vs. Drain Curr ent(Ⅴ)
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
[A]
D
10000
VGS= -2.5V
Pulsed
]
Ω
1000
(ON)[m
DS
100
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.01 0.1 1 10
DRAIN-CURRENT : -ID[A]
Fi g.6 Stat ic D rain- Source O n-State
Resistance vs. Drain Curr ent(Ⅲ)
10
VDS= -6V
Pulsed
1
0.1
0.01 0.1 1 10
FOR WARD TR ANSFER AD MITT ANCE : |Yfs | [S]
DRAIN-CURRENT : -ID[A]
Fi g.9 F orward T ransf er Admit tance
vs. Dr ain Cur rent
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
F
it
S
%
V
V
F
S
Fig.2-2 Gate charge waveform
V
Data Sheet RW1A013ZP
10
VGS=0V
Pulsed
1
0.1
REVER SE DRAIN C URREN T : -Is [A]
0.01
00.5 11.5
SOUR CE-DR AIN VOLTAGE : - VSD [V]
Fi g.10 R evers e Drai n Curr ent
vs. Sourse-Dr ain Voltage
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
5
[V]
GS
4
3
2
1
GATE- SOURC E VOLTAGE : -V
0
00.5 11.52 2.53
TOTAL GATE CHARGE : Qg [nC]
Fi g.13 D ynamic Input Char acteri sti cs
Ta=25°C
V
= -6V
DD
I
= -1.3A
D
R
=10Ω
G
Pulsed
zMeasurement circuits
D
V
R
G
I
GS
D.U.T.
600
500
]
Ω
400
(ON)[m
DS
300
200
RESIST ANCE : R
100
STATIC DRAIN -SOUR CE ON- STATE
0
0246 810
GATE- SOURC E VOLTAGE : -VGS[V]
Fi g.11 St atic D rain- Sourc e On-State
Resistance vs. Gate Source Voltag e
1000
100
10
CAPAC ITANCE : C [pF]
1
0.01 0.1 1 10 100
ID= -0.6A
ID= -1.3A
Ciss
Coss
Crss
DR AIN-SOUR CE VOLTAGE : - V
Fi g.14 Typi cal Capac itance
vs. D rai n-Sourc e Voltag e
Ta=25°C
Pulsed
Ta=25°C
f=1MH z
V
=0V
GS
[V]
DS
1000
t
f
100
10
SWITC HING TIME : t [ns]
t
r
1
0.01 0.1 1 10
td(off)
td(on)
DRAIN-CURRENT : -ID[A]
Fi g.12 Swi tching Char acteri sti cs
Ta= 25°C
V
= -6V
DD
V
= -4.5V
GS
R
=10Ω
G
Pulsed
Pulse width
GS
V
D
R
L
10%
50%
90%
50%
10% 10
V
DD
DS
t
90% 90%
d(on)
t
r
t
on
t
d(off)
t
f
t
off
ig.1-1 Switching time measurement circu
I
G(Const.)
R
G
ig.2-1 Gate charge measurement circuit
zNotice
This product might cause chip aging and breakdown under the large electrified environment .
Please consider to design ESD protection circuit.
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2009 ROHM Co., Ltd. All rights reserved.
Fig.1-2 Switching waveforms
VG
D
V
GS
D.U.T.
I
V
D
R
L
GS
QgsQ
V
DD
g
Q
gd
Charge
2009.06 - Rev.A
Notes
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consent of ROHM Co.,Ltd.
The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other par ties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
Notice
The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specied in this document are not designed to be radiation tolerant.
While ROHM always makes ef forts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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The Products are not designed or manufactured to be used with any equipment, device or
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may result in a direct threat to human life or create a risk of human injury (such as a medical
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