ROHM RW1A013ZP Technical data
C
1.5V Drive Pch MOSFET
RW1A013ZP
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplication zInner circuit
Switching
zPackaging specifications
Type
RW1A013ZP
Package
Code
Basic ordering unit (pieces)
Taping
T2R
8000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
D
Limits Unit
−12
±10
±1.3
∗1
±2.6
−0.5
∗1
−2.6
∗2
0.7
150
−55 to +150
zThermal resistance
Parameter
hannel to ambient
∗ When mounted on a ceramic board
Symbol Limits Unit
Rth(ch-a)
∗
179
WEMT6
Abbreviated symbol : XC
(6)
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
°C / W
(6) (5) (4)
(1) (2) (3)
(5)
∗2
(2)
(4)
∗1
(1) Drain
(2) Drain
(3) Gate
(3)
(4) Source
(5) Drain
(6) Drain
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗Pulsed
Min.−Typ. Max.
I
GSS
−±10 µAVGS=±10V, VDS=0V
−12 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
−−−1 µAV
−0.3 −−1.0 V V
− 190 260 I
∗
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
− 280 390 mΩ
− 400 600 I
∗
1.4 −−SV
fs
− 290 − pF V
iss
− 2821− pF V
oss
−
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
8
−
10
−
30
−
9
−
2.4
−
0.6
−
0.4
−−nC
Min. Typ. Max.
∗
V
SD
−−−1.2 V IS= −1.3A, VGS=0VForward voltage
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC
Unit
mΩ
mΩ
DS
DS
D
I
D
D
Conditions
= −12V, VGS=0V
= −6V, ID= −1mA
= −1.3A, VGS= −4.5V
= −0.6A, VGS= −2.5V
= −0.6A, VGS= −1.8V
mΩ− 530 1060 ID= −0.2A, VGS= −1.5V
= −6V, ID= −1.3A
DS
= −6V
DS
=0V
GS
V
DD
−6V
ID= −0.6A
V
GS
= −4.5V
L
10Ω
R
R
G
=10Ω
R
L
4.6Ω
R
G
=10Ω
Conditions
Unit
V
DD
I
= −1.3A
D
V
GS
−6V
= −4.5V
Data Sheet RW1A013ZP
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○
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
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