ROHM RVQ040N05 Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

RVQ040N05

Nch 45V 4A Power MOSFET

lOutline

V

DSS

45V

R

DS(on)

(Max.)

53mW

I

D

4A

P

D

1.25W

lFeatures

lInner circuit

1) Low on - resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TSMT6).

4) Pb-free lead plating ; RoHS compliant

lPackaging specifications

Type

Packaging

Taping

lApplication

Reel size (mm)

180

DC/DC converters

Tape width (mm)

8

Basic ordering unit (pcs)

3,000

Drain - Source voltage

V

DSS

45

V

Taping code

TR

Marking

QG

lAbsolute maximum ratings(Ta = 25°C)

Parameter

Symbol

Value

Unit

Continuous drain current

I

D

*1

4.0

A

Pulsed drain current

I

D,pulse

*2

16

A

Power dissipation
Gate - Source voltage

V

GSS

21

V

P

D

*3

1.25

W

P

D

*4

0.6

W

Junction temperature

T

j

150

°C

Range of storage temperature

T

stg

-55 to +150

°C

(1)

(2)

(3)

(4)

(5)

(6)

*1 ESD PROTECTION DIODE
*2 BODY DIODE

(1) Drain

(2) Drain
(3) Gate
(4) Source
(5) Drain

(6) Drain

TSMT6

1/11

2012.06 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

RVQ040N05

*1 Limited only by maximum temperature allowed.

*2 Pw  10ms, Duty cycle  1%

*3 Mounted on a seramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)

lThermal resistance

Parameter

Symbol

Values

Unit
Min.

Typ.

Max.

Thermal resistance, junction - ambient

R

thJA

*4

--208

°C/W

Thermal resistance, junction - ambient

R

thJA

*3

--100

°C/W

lElectrical characteristics(Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit
Min.

Typ.

Max.

V

Breakdown voltage
temperature coefficient

ΔV

(BR)DSS

ΔT

j

ID = 1mA
referenced to 25°C

-42-

mV/°C

Drain - Source breakdown
voltage

V

(BR)DSS

V

GS

= 0V, ID = 1mA

45--

mA

Gate - Source leakage current

I

GSS

V

GS

= 21V, V

DS

= 0V

-

-

10

mA

Zero gate voltage drain current

I

DSS

V

DS

= 45V, V

GS

= 0V

--1

V

Gate threshold voltage
temperature coefficient

ΔV

(GS)th

ΔT

j

ID = 1mA
referenced to 25°C

-

-4.2

-

mV/°C

Gate threshold voltage

V

GS (th)

V

DS

= 10V, ID = 1mA

1.0-2.5-3853-70100

mW

Gate input resistannce

R

G

W

VGS=4.5V, ID=4A

-

47

f = 1MHz, open drain

Static drain - source
on - state resistance

R

DS(on)

*5

66

VGS=4.5V, ID=4A

-5374

VGS=10V, ID=4A, Tj=125°C

VGS=10V, ID=4A

S-7

-

Transconductance

gfs

*5

V

DS

= 10V, ID = 4A

36-

2/11

2012.06 - Rev.B

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Data Sheet

RVQ040N05

*5 Pulsed

lElectrical characteristics(Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit
Min.

Typ.

Max.

pF

Output capacitance

C

oss

V

DS

= 10V

-

120

-

Reverse transfer capacitance

C

rss

f = 1MHz

Input capacitance

C

iss

V

GS

= 0V

-

530--65-

Unit
Min.

Typ.

Max.

Turn - on delay time

t

d(on)

*5

V

DD

⋍ 25V, V

GS

= 10V

-12-

ns

Rise time

t

r

*5

ID = 2A

-15-

Turn - off delay time

t

d(off)

*5

RL = 12.5W

-40-

Fall time

V

DD

⋍ 25V, ID = 4A

VGS = 5V

V

DD

⋍ 25V, ID = 4A

VGS = 5V

-

6.3

8.8

Total gate charge

Q

g

*5

-

lGate Charge characteristics(Ta = 25°C)

Parameter

Symbol

Conditions

Values

t

f

*5

RG = 10W

-12Max.-2.0

-

Gate - Drain charge

Q

gd

*5

-

2.6

-

lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit
Min.

Typ.

nC

V

DD

⋍ 25V, ID = 4A

VGS = 10V

-10-

Gate - Source charge

Q

gs

*5

A

Forward voltage

V

SD

*5

V

GS

= 0V, Is = 4.0A

--1.2

V

Inverse diode continuous,
forward current

IS

*1

Ta = 25C

--1.6

3/11

2012.06 - Rev.B

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Data Sheet

RVQ040N05

lElectrical characteristic curves

0.1

1

10

100

1000

0.0001 0.01 1 100

T

a

=25ºC

Single Pulse

Fig.1 Power Dissipation Derating Curve

Power Dissipation : P

D

/P

D

max. [%]

Junction Temperature : Tj [°C]

Fig.2 Maximum Safe Operating Area

Drain Current : I

D

[A]

Drain - Source Voltage : VDS [V]

Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width

Normalized Transient Thermal Resistance : r

(t)

Pulse Width : Pw [s]

Fig.4 Single Pulse Maxmum Power dissipation

Peak Transient Power : P(W)

Pulse Width : Pw [s]

0

20

40

60

80

100

120

0 50 100 150 200

0.01

0.1

1

10

100

0.1 1 10 100

Operation in this area

is limited by RDS(on)

( VGS = 10V )

PW = 100μs

PW = 1ms

PW = 10ms

DC Operation

T

a

=25ºC

Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)

0.001

0.01

0.1

1

10

0.0001 0.01 1 100

T

a

=25ºC

Single Pulse

Rth(ch

-a)=100ºC/W

Rth(ch

-a)(t)=r(t)×Rth(ch-a)

Mounted on ceramic board
(30mm ×

30mm × 0.8mm)

top D=1

D=0.5
D=0.1

D=0.05
D=0.01
bottom Signle

4/11

2012.06 - Rev.B