ROHM RUU002N05 Technical data

A

1.2V Drive Nch MOSFET

RUU002N05

Structure



Silicon N-channel MOSFET

Features



1) High speed switing.

2) Small package(UMT3).

3)Ultra low voltage drive(1.2V drive).

Application



Switching

Dimensions



UMT3

(S C-70)
<SOT-323>

(Unit : mm)

bbreviated symbol : RH

Packaging specifications



Package Taping

Type

Code T106
Basic ordering unit (pieces) 3000

RUU002N05 

Absolute maximum ratings



Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

(Ta = 25C)

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

D

*1

*1

*1

*1

*2

*2

50 V



200 mA



800 mA



150 mA

800 mA

200 mW

Channel temperature Tch 150
Range of storage temperature Tstg

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a recommended land.

55 to +150C



8V

C



Inner circuit



(2) (1)

(1) SOURCE
(2) GATE
(3) DRAIN

(3)

∗1

∗2

∗1 BODY DIODE
∗2 ESD PROTECTION DIODE

Thermal resistance



Parameter

Channel to ambient Rth (ch-a) 625

* Each terminal mounted on a recommended land.

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2010 ROHM Co., Ltd. All rights reserved.

Symbol Limits Unit

*

C / W



2010.06 - Rev.B

V

V

V

V

Electrical characteristics (Ta = 25C)

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

*Pulsed

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

l 0.4 - - S ID=200mA, VDS=10V

fs

iss

oss

rss

d(on)

r

d(off)

f

Body diode characteristics (Source-Drain) (Ta = 25C)

Symbol Min. Typ. Max. Unit

Forward voltage V

*Pulsed

SD

--10

50 - - V ID=1mA, VGS=0V

--1AVDS=50V, VGS=0V

0.3 - 1.0 V VDS=10V, ID=1mA

-1.62.2 I

-1.72.4 I

*

-1.92.7 I

-2.04.0 I

-2.47.2 I

*

-25-pFV

-6-pFV

-3-pFf=1MHz

*

-4-nsI

*

*

*

-6-nsV

*

*

-15-nsR

-55-nsR

*

*

*

--1.2VI

ConditionsParameter

AVGS=8V, VDS=0V



=200mA, VGS=4.5

D

=200mA, VGS=2.5

D



=100mA, VGS=1.8

D

=40mA, VGS=1.5V

D

=20mA, VGS=1.2V

D

=10V

DS

=0V

GS

=100mA, VDD 30

D

=4.5V

GS

=300



L

=10



G

ConditionsParameter

=200mA, VGS=0V

s

Data Sheet RUU002N05

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○

2010 ROHM Co., Ltd. All rights reserved.

2010.06 - Rev.B