ROHM RUR040N02 Technical data

Transistors

s

(

1.5V Drive Nch MOSFET

RUR040N02

zStructure
Silicon N-channel
MOSFET

zFeatures

1) 1.5V drive

2) Low On-resistance.

3) Built-in G-S Protection Diode.

4) Small Surface Mount Package (TSMT3).

zApplication
Switchi ng

zDimension

TSMT3

(1) Gate
(2) Source
(3) Drain

RUR040N02

Unit : mm)

Each lead has same dimensions

Abbreviated symbol : XF

zPackaging specifications

Package

Type

RUR040N02

Code
Basic ordering unit (pieces)

Taping

TL

3000

zEquivalent circuit

(1)

∗1

(3)

∗2

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(2)

(1) Gate
(2) Source
(3) Drain

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Total power dissipation

Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

Limits Unit

20

±10

±4.0

∗1

±8.0

∗1
∗2

0.8

8.0

1.0

VV
VV
AI
AI
AI
AI

WP

°CTch 150
°CTstg −55 to +150

zThermal resistance

Parameter Symbol Limits Unit

Channel to ambient

∗ Mounted on a ceramic board

Rth (ch-a) 125

∗

°C / W

1/4

RUR040N02

Transistors

zElectrical characteristics (T a=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time

t

Rise time
Turn-off delay time

t
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (T a =25°C)

Parameter Symbol

∗Pulsed

2/4

Min. Typ. Max.

I

GSS

I

DSS

0.3 − 1.3 V V

GS (th)

∗

DS (on)

∗

Y

5.0 −−SV

fs

C

iss

C

oss

C

rss

∗

d (on)

∗

t

r

∗

d (off)

∗

t

f

∗

Q

g

∗

Q

gs

∗

Q

gd

Min. Typ. Max.

∗

V

SD

Unit

−−±10 µAV

Conditions

=±10V, VDS=0V

GS

20 −−VID= 1mA, VGS=0V

−−1 µAV

− 25 35 I

mΩ

− 33 46 mΩ

− 42 59 I

110

mΩ
mΩ− 55

− 680 − pF V

− 15090− pF V

−

−

−

−

−

−

−

−−

− pF f=1MHz

10

− ns

30

− ns

50

− ns

60

− ns

8

− nC

1.8

−

1.3

nC
nC

Unit

= 20V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 4.0A, VGS= 4.5V

D

= 4.0A, VGS= 2.5V

I

D

= 2.0A, VGS= 1.8V

D

I

= 0.8A, VGS= 1.5V

D

= 10V, ID= 4.0A

DS

= 10V

DS

=0V

GS

ID= 2.0A,
V

R

I
V
R

V

DD

GS

= 4.5V

L

5Ω, RG=10Ω

V

10V

= 4.0A,

D

GS

L

DD

= 4.5V

2.5Ω, RG=10Ω

Conditions

−−1.2 VForward voltage IS= 0.8A, VGS=0V

10V