ROHM RUR040N02 Technical data

Transistors

s

(

1.5V Drive Nch MOSFET

RUR040N02

zStructure
Silicon N-channel
MOSFET

zFeatures

1) 1.5V drive

2) Low On-resistance.

3) Built-in G-S Protection Diode.

4) Small Surface Mount Package (TSMT3).

zApplication
Switchi ng

zDimension

TSMT3

(1) Gate
(2) Source
(3) Drain

RUR040N02

Unit : mm)

Each lead has same dimensions

Abbreviated symbol : XF

zPackaging specifications

Package

Type

RUR040N02

Code
Basic ordering unit (pieces)

Taping

TL

3000

zEquivalent circuit

(1)

∗1

(3)

∗2

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(2)

(1) Gate
(2) Source
(3) Drain

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Total power dissipation

Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

Limits Unit

20

±10

±4.0

∗1

±8.0

∗1
∗2

0.8

8.0

1.0

VV
VV
AI
AI
AI
AI

WP

°CTch 150
°CTstg −55 to +150

zThermal resistance

Parameter Symbol Limits Unit

Channel to ambient

∗ Mounted on a ceramic board

Rth (ch-a) 125

∗

°C / W

1/4

RUR040N02

Transistors

zElectrical characteristics (T a=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time

t

Rise time
Turn-off delay time

t
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (T a =25°C)

Parameter Symbol

∗Pulsed

2/4

Min. Typ. Max.

I

GSS

I

DSS

0.3 − 1.3 V V

GS (th)

∗

DS (on)

∗

Y

5.0 −−SV

fs

C

iss

C

oss

C

rss

∗

d (on)

∗

t

r

∗

d (off)

∗

t

f

∗

Q

g

∗

Q

gs

∗

Q

gd

Min. Typ. Max.

∗

V

SD

Unit

−−±10 µAV

Conditions

=±10V, VDS=0V

GS

20 −−VID= 1mA, VGS=0V

−−1 µAV

− 25 35 I

mΩ

− 33 46 mΩ

− 42 59 I

110

mΩ
mΩ− 55

− 680 − pF V

− 15090− pF V

−

−

−

−

−

−

−

−−

− pF f=1MHz

10

− ns

30

− ns

50

− ns

60

− ns

8

− nC

1.8

−

1.3

nC
nC

Unit

= 20V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 4.0A, VGS= 4.5V

D

= 4.0A, VGS= 2.5V

I

D

= 2.0A, VGS= 1.8V

D

I

= 0.8A, VGS= 1.5V

D

= 10V, ID= 4.0A

DS

= 10V

DS

=0V

GS

ID= 2.0A,
V

R

I
V
R

V

DD

GS

= 4.5V

L

5Ω, RG=10Ω

V

10V

= 4.0A,

D

GS

L

DD

= 4.5V

2.5Ω, RG=10Ω

Conditions

−−1.2 VForward voltage IS= 0.8A, VGS=0V

10V

Transistors

zElectrical characteristic curves

10

VDS=10V
Pulsed

1

(A)

D

Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C

0.1

0.01

DRAIN CURRENT : I

1000

(mΩ)

DS (on)

R

100

Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C

VGS=4.5V
Pulsed

1000

(mΩ)

DS (on)

R

100

RUR040N02

Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C

VGS=2.5V
Pulsed

0.001

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

GATE-SOURCE VOLTAGE : VGS (V)

Fig.1 Typical Transfer Characteristics

1000

(mΩ)

DS (on)

R

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C

100

10

0.01 10.1 10

DRAIN CURRENT : ID (A)

VGS=1.8V
Pulsed

Fig.4 Static Drain-Source

On-State Resistance
vs. Drain Current (ΙΙΙ)

100

(mΩ)

80

DS (on)

R

60

ID=4.0A
ID=2.0A

Ta=25°C
Pulsed

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

10

0.01 10.1 10

DRAIN CURRENT : ID (A)

Fig.2 Static Drain-Source

On-State Resistance
vs. Drain Current (Ι)

1000

(mΩ)

DS (on)

R

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C

100

10

0.01 10.1 10

DRAIN CURRENT : ID (A)

Fig.5 Static Drain-Source

On-State Resistance
vs. Drain Current (Ι )

10

Ta=125°C
Ta=75°C

(A)

Ta=25°C

S

Ta=−25°C

1

VGS=1.5V
Pulsed

VGS=0V
Pulsed

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

10

0.01 10.1 10

DRAIN CURRENT : ID (A)

Fig.3 Static Drain-Source

On-State Resistance
vs. Drain Current (ΙΙ)

1000

(mΩ)

DS (on)

R

VGS=1.5V
V

GS

=1.8V

V

GS

100

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

=2.5V

V

GS

=4.5V

10

0.01 10.1 10

DRAIN CURRENT : ID (A)

Fig.6 Static Drain-Source

On-State Resistance
vs. Drain Current ( )

10000

1000

Ta=25°C
Pulsed

Ta=25°C
f=1MHz

GS

=0V

V

C

iss

40

20

0

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

0

GATE-SOURCE VOLTAGE : VGS (V)

Fig.7 Static Drain-Source

On-State Resistance
vs. Gate-Source Voletage

0.1

SOURCE CURRENT : I

510

0.01

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.8 Source Current
vs. Source-Drain Voltage

1.00.50.0 1.5

100

CAPACITANCE : C (pF)

10

0.01 10.1 10 100

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.9 Typical Capacitance
vs. Drain-Source Voltage

C

oss

C

rss

3/4

Transistors

10000

1000

t

f

100

t

d(off)

t

d(on)

10

t

SWITCHING TIME : t (ns)

zMeasurement circuits

r

1

0.01

DRAIN CURRENT : ID (A)

Fig.10 Switching Characteristics

Ta=25°C

DD

=10V

V

GS

=4.5V

V

G

=10Ω

R
Pulsed

10.1 10

V

GS

R

G

6

Ta=25°C

DD

=10V

V

(V)

D

=4.0V

I

GS

G

=10Ω

R
Pulsed

4

2

GATE-SOURCE VOLTAGE : V

0

0

1234567891011

TOTAL GATE CHARGE : Qg (nC)

Fig.11 Dynamic Input Characteristics

D

I

D.U.T.

V

DS

R

L

V

DD

RUR040N02

100

Ta=−25°C
Ta=25°C

10

Ta=75°C
Ta=125°C

(S)
Yfs

1

FORWARD TRANSFER ADMITTANCE

0.1

DRAIN CURRENT : ID (A)

Fig.12 Forward Transfer

Admittance vs. Drain Current

Pulse Width

90%

V
V

10%

GS
DS

10%

t

d(on)

90%
t

r

t

on

50%50%

10%

t

d(off)

90%

t

r

t

off

VDS=10V
Pulsed

10.10.01 10

Fig.13 Switching Time Test Circuit

V

I

G (Const.)

GS

R

G

D

I

D.U.T.

Fig.15 Gate Charge Test Circuit

R

L

V

DD

V

DS

Fig.14 Switching Time Waveforms

V

G

Q

g

V

GS

QgsQ

gd

Charge

Fig.16 Gate Charge Waveform

4/4

Appendix

Notes

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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
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cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.

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Appendix1-Rev2.0