ROHM RUF020N02 Technical data

C

1.5V Drive Nch MOSFET

RUF020N02

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low On-resistance.

2) Space saving, small surface mount Package (TUMT3).

3) Low voltage drive (1.5V drive).

zApplications zInner circuit

Switching

zPackaging specifications

Type

RUF020N02

Package
Code
Basic ordering unit (pieces)

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

∗1

∗1
∗2

Limits Unit

20

±10

±2
±6

0.6
6

0.8

150

−55 to +150

zThermal resistance

Parameter

hannel to ambient

∗ When mounted on a ceramic board

Symbol Limits Unit

∗

156

TUMT3

(1) Gate
(2) Source
(3) Drain

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

Abbreviated symbol : XK

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

°C/WRth(ch-a)

(3)

∗1

(2)

0.2Max.

∗2

(1) Gate
(2) Source
(3) Drain

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1/4

2009.06 - Rev.A

RUF020N02

zElectrical characteristics (Ta=25°C)

Data Sheet

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage

V

(BR) DSS

V

Min.−Typ. Max.

I

GSS

I

DSS

GS (th)

−±10 µAVGS=±10V, VDS=0V

20 −−VID= 1mA, VGS=0V

−−1 µAV

0.3 − 1.0 V V

− 75 105 I

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

R

t

t

DS (on)

Y

C

C
C

d (on)

d (off)

Q

Q

Q

− 95 135 mΩ

∗

− 130 185 I

∗

1.8 −−SV

fs

− 180 − pF V

iss

− 4525− pF V

oss

−

rss

∗

−

∗

−

t

r

∗

−

∗

−

t

f

∗

−

g

∗

−

gs

∗

−−nC

gd

− pF f=1MHz

6

− ns

17

− ns

30

− ns

30

− ns

2.0

− nC

0.6

− nC V

0.4

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min. Typ. Max.

∗

V

SD

−−1.2 V IS= 2A, VGS=0VForward voltage

Unit

mΩ

mΩ

DS
DS

D

I

D
D

Conditions

= 20V, VGS=0V

= 10V, ID= 1mA
= 2A, VGS= 4.5V
= 2A, VGS= 2.5V
= 1A, VGS= 1.8V

mΩ− 170 240 ID= 0.4A, VGS= 1.5V

= 10V, ID= 2A

DS

= 10V

DS

=0V

GS

V

DD

10V

ID= 1A
V

GS

= 4.5V

L

10Ω

R
R

G

=10Ω

V

10V, ID= 2A

DD

= 4.5V

GS

L

5Ω, RG=10Ω

R

Unit

Conditions

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2/4

2009.06 - Rev.A

RUF020N02

zElectrical characteristics curves

4

3

[A]

D

2

1

DRAIN CURRENT : I

0

0 0.2 0.4 0.6 0.8 1

VGS= 1.8V

Ta=25°C
Puls ed

VGS= 10V
V

= 4.5V

GS

= 2.5V

V

GS

VGS= 1.5V

= 1.3V

V

GS

VGS= 1.2V

4

VGS= 4.5V
V

= 2.5V

[A]

D

3

2

DRAIN CURRENT : I

1

0

0246 810

GS

= 1.8V

V

GS

Ta=25°C
Puls ed

VGS= 1.5V

VGS= 1.3V

VGS= 1.2V

10

VDS= 10V
Pulsed

[A]

D

1

Ta= 125°C

Ta= 75°C

Ta= 25°C
Ta= - 25°C

0.1

DRAIN CURRENT : I

0.01

0.001

00.5 11.52

Data Sheet

DR AIN-SOUR CE VOLTAGE : VDS[V] DR AIN-SOUR CE VOLTAGE : VDS[V]

Fi g.1 Typic al Output C haracter isti cs(Ⅰ) Fig .2 Typical Output Characteri stics(Ⅱ)

1000

Ta= 25°C
Pulsed

]

Ω

(on) [m

DS

100

RESISTAN CE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0. 1 1 10

DRAIN-CURRENT : I

Fi g.4 Stati c Dr ain-Sour ce On-Stat e

Resistance vs. Drain C urr ent(Ⅰ)

1000

VGS= 1.8V
Puls ed

]

Ω

(on)[m

DS

100

RESISTAN CE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0.1 1 10

VGS= 1.5V

= 1.8V

V

GS

V

= 2.5V

GS

= 4.5V

V

GS

[A]

D

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

1000

VGS= 4.5V
Puls ed

]

Ω

(on) [m

DS

100

RESISTAN CE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.5 Stati c Dr ain-Sour ce On-Stat e

Resistance vs. Drain C urr ent(Ⅱ)

1000

VGS= 1.5V
Pulsed

]

Ω

(on) [m

DS

100

RESISTAN CE : R

STATIC DRAIN -SOURC E ON-STAT E

10

0.01 0.1 1 10

Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C

GATE-SO URCE VOLTAGE : VGS[V]

Fi g.3 Typic al Tr ansfer C haracter isti cs

1000

VGS= 2.5V
Pulsed

]

Ω

(on)[m

DS

100

RESISTAN CE : R

STATIC DRAIN- SOURC E ON-STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.6 Stati c Dr ain-Sour ce On-Stat e

Resistance vs. Drain C urr ent(Ⅲ)

10

VDS= 10V
Pulsed

1

FORWARD TRANSFER

ADMIT TANCE : |Yfs| [S]

0.1

0.01 0.1 1 10

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C

DRAIN-CURRENT : ID[A]

Fi g.7 Stati c Dr ain-Sour ce On-Stat e

Resistance vs. Drai n Curr ent(Ⅳ)

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2009 ROHM Co., Ltd. All rights reserved.

DRAIN-CURRENT : I

Fi g.8 Stati c Dr ain-Sour ce On-Stat e

Resistance vs. Drain C urr ent(Ⅴ)

[A]

D

3/4

DRAIN-CURRENT : ID[A]

Fi g.9 For ward Tr ansfer Admit tance
vs. Drain Curr ent

2009.06 - Rev.A

Fig.1-1 Switching Time Measurement Circuit

%

%

V
V

Pulse Width

Fig.2-1 Gate Charge Measurement Circuit

S

Fig.2-2 Gate Charge Waveform

V

RUF020N02

10

VGS=0V
Pulsed

1

0.1

REVER SE DRAIN C URR ENT : Is [A]

0.01

00.511.5

SOUR CE-D RAIN VOLTA GE : VSD [V]

Fi g.10 R evers e Drai n Curr ent22
vs. Sourse-Drai n Voltage

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta=-25°C

5

Ta= 25°C
V

= 10V

DD

[V]

= 2A

I

D

GS

4

R

=10Ω

G

Pulsed

3

2

1

GATE- SOURC E VOLTAGE : V

0

00.511.522.53

TOTAL GATE CHARGE : Qg [nC]

Fi g.13 D ynamic I nput C haracter isti cs

zMeasurement circuit

300

]

250

Ω

200

(ON)[m

DS

150

100

RESIST ANCE : R

50

STATI C DRAIN -SOUR CE ON- STATE

0

02 46810

GATE- SOURC E VOLTAGE : VGS[V]

Fi g.11 Stati c Dr ain-Sour ce On-St ate
R esis tance vs. Gate Source Voltage

1000

100

CAPAC ITANC E : C [pF]

Ta=25°C
f=1MH z
V

=0V

GS

10

0.01 0. 1 1 10 100

ID= 2.0A

ID= 1.0A

Coss

Crss

DR AIN-SOU RCE VOLT AGE : V

Fi g.14 T ypical Capaci tance
vs. Dr ain-Source Voltag e

Ta= 25°C
Pulsed

Ciss

DS

1000

td(off)

100

10

SWIT CHING TIM E : t [ns]

1

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.12 Switching Characteristics

[V]

Data Sheet

Ta= 25°C
V

= 10V

DD

=4.5V

V

t

f

t

r

GS

R

=10Ω

G

Pulsed

td(on)

VGS

D

I

D.U.T.

RG

V

I

G (Const.)

GS

R

G

I

D.U.T.

D

zNotice

This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

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2009 ROHM Co., Ltd. All rights reserved.

RL

VDD

VDS

10%

GS
DS

10%

t

d(on)

t

on

Fig.1-2 Switching Waveforms

90%
t

r

90%

t

d(off)

50%50%

10

90

t

r

t

off

V

G

V

D

R

L

GS

Q

V

DD

4/4

Q

g

gs

Q

gd

Charge

2009.06 - Rev.A

Notes

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"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and
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