ROHM RUF020N02 Technical data

C

1.5V Drive Nch MOSFET

RUF020N02

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low On-resistance.

2) Space saving, small surface mount Package (TUMT3).

3) Low voltage drive (1.5V drive).

zApplications zInner circuit

Switching

zPackaging specifications

Type

RUF020N02

Package
Code
Basic ordering unit (pieces)

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

∗1

∗1
∗2

Limits Unit

20

±10

±2
±6

0.6
6

0.8

150

−55 to +150

zThermal resistance

Parameter

hannel to ambient

∗ When mounted on a ceramic board

Symbol Limits Unit

∗

156

TUMT3

(1) Gate
(2) Source
(3) Drain

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

Abbreviated symbol : XK

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

°C/WRth(ch-a)

(3)

∗1

(2)

0.2Max.

∗2

(1) Gate
(2) Source
(3) Drain

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2009 ROHM Co., Ltd. All rights reserved.

1/4

2009.06 - Rev.A

RUF020N02

zElectrical characteristics (Ta=25°C)

Data Sheet

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage

V

(BR) DSS

V

Min.−Typ. Max.

I

GSS

I

DSS

GS (th)

−±10 µAVGS=±10V, VDS=0V

20 −−VID= 1mA, VGS=0V

−−1 µAV

0.3 − 1.0 V V

− 75 105 I

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

R

t

t

DS (on)

Y

C

C
C

d (on)

d (off)

Q

Q

Q

− 95 135 mΩ

∗

− 130 185 I

∗

1.8 −−SV

fs

− 180 − pF V

iss

− 4525− pF V

oss

−

rss

∗

−

∗

−

t

r

∗

−

∗

−

t

f

∗

−

g

∗

−

gs

∗

−−nC

gd

− pF f=1MHz

6

− ns

17

− ns

30

− ns

30

− ns

2.0

− nC

0.6

− nC V

0.4

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min. Typ. Max.

∗

V

SD

−−1.2 V IS= 2A, VGS=0VForward voltage

Unit

mΩ

mΩ

DS
DS

D

I

D
D

Conditions

= 20V, VGS=0V

= 10V, ID= 1mA
= 2A, VGS= 4.5V
= 2A, VGS= 2.5V
= 1A, VGS= 1.8V

mΩ− 170 240 ID= 0.4A, VGS= 1.5V

= 10V, ID= 2A

DS

= 10V

DS

=0V

GS

V

DD

10V

ID= 1A
V

GS

= 4.5V

L

10Ω

R
R

G

=10Ω

V

10V, ID= 2A

DD

= 4.5V

GS

L

5Ω, RG=10Ω

R

Unit

Conditions

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2009 ROHM Co., Ltd. All rights reserved.

2/4

2009.06 - Rev.A