ROHM RUE002N02 Technical data

g

C

1.2V Drive Nch MOSFET

RUE002N02

zStructure zDimensions (Unit : mm)

Silicon N-channel
MOSFET

zApplications

Switching

zFeatures

1) Fast switching speed.

2) Low voltage drive (1.2V) makes this
device ideal for portable equipment.

3) Drive circuits can be simple. zInner circuit

zPackaging specifications

Package

Type

RUE002N02

Code
Basic ordering unit

(pieces)

Tapin

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Total power dissipation
Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land

Continuous
Pulsed

Symbol Limits Unit

DSS

V
V

GSS

D

1

∗

I

DP

2

∗

P

D

Tch

Tstg °C−55 to +150

20 V

±8

±200I

150
150

V
mA
mA±400

mW

°C

zThermal resistance

Parameter

hannel to ambient

∗ Each terminal mounted on a recommended land

Symbol Limits Unit

Rth(ch-a)

∗

833

°C / W

EMT3

(1)Source
(2)Gate
(3)Drain

(2)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

Abbreviated symbol : QR

∗1

(3)

(1)

∗2

(1) Source
(2) Gate
(3) Drain

www.rohm.com

c

○

2009 ROHM Co., Ltd. All rights reserved.

1/4

2009.06 - Rev.A

RUE002N02

zElectrical characteristics (Ta=25°C)

Min.

GSS

−

20

−

0.3

−

∗

−

−

−

∗

200

C

iss

−

oss

rss

d(on)

t

d(off)

t

−

−

∗

−

∗

r

−

∗

−

∗

f

−

Min. Typ. Max.

∗

−−1.2 V IS= 100mA, VGS=0VForward voltage

Typ. Max. Unit Conditions

−

±10

−

−

−

0.8

1.2

1.0 1.4

1.2

2.4

4.8

1.6

−

25
10
10

5
10
15
10

−

1
1

−

−

−

−

−

−

−

−

Unit

GS=±8V, VDS=0V

µAV

V

I

D=1mA, VGS=0V

µA

V

DS=20V, VGS=0V

V

V

DS=10V, ID=1mA

Ω

I

D=200mA, VGS=2.5V

Ω

D=200mA, VGS=1.8V

I

Ω

D=40mA, VGS=1.5V

I
I

D=20mA, VGS=1.2V

Ω

mS

V

DS=10V, ID=200mA

pF

V

DS=10V

pF

V

GS=0V

pF

f=1MHz

ns

DD 10V, ID=150mA

V

ns

V

GS=4.0V

ns

L 67Ω

R

ns

R

G=10Ω

Conditions

t

Symbol

I

V(BR)DSS

IDSS

VGS(th)

RDS(on)

|Yfs|

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain curren
Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time

C
C
t

Rise time
Turn-off delay time

t

Fall time

∗ Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

V

∗ Pulsed

SD

Data Sheet

www.rohm.com

c

○

2009 ROHM Co., Ltd. All rights reserved.

2/4

2009.06 - Rev.A