ROHM RU1C002ZP Technical data
1.2V Drive Pch MOSFET
RU1C002ZP
Structure
Silicon P-channel MOSFET
Features
1)Low on-resistance.
2)Low voltage drive(1.2V drive).
Application
Switching
Packaging specifications
Type |
Package |
Taping |
Code |
TCL |
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Basic ordering unit (pieces) |
3000 |
RU1C002ZP |
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Absolute maximum ratings (Ta = 25 C)
Parameter |
Symbol |
Limits |
Unit |
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Drain-source voltage |
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VDSS |
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20 |
V |
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Gate-source voltage |
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VGSS |
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10 |
V |
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Drain current |
Continuous |
ID |
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200 |
mA |
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Pulsed |
IDP |
*1 |
800 |
mA |
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Source current |
Continuous |
IS |
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100 |
mA |
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(Body Diode) |
Pulsed |
ISP *1 |
800 |
mA |
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Power dissipation |
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PD |
*2 |
150 |
mW |
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Channel temperature |
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Tch |
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150 |
C |
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Range of storage temperature |
Tstg |
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55 to 150 |
C |
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*1 Pw 10 s, Duty cycle 1% |
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*2 Each terminal mounted on a reference land. |
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Thermal resistance |
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Parameter |
Symbol |
Limits |
Unit |
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Channel to Ambient |
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Rth (ch-a)* |
833 |
C / W |
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* Each terminal mounted on a reference land. |
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Data Sheet
Dimensions (Unit : mm)
UMT3F
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2.0 |
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0.32 |
0.9 |
0.425 |
(3) |
0.53 |
2.1 |
1.25 |
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0.425 |
(1) |
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(2) |
0.53 |
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0.65 |
0.65 |
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0.13 |
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1.3 |
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Abbreviated symbol : YK
Inner circuit
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(3) |
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2 |
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(1) |
Gate |
(1) |
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(2) |
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(2) |
Source |
1 BODY DIODE |
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(3) Drain |
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2 ESD PROTECTION DIODE
www.rohm.com |
1/5 |
2011.09 - Rev.A |
© 2011 ROHM Co., Ltd. All rights reserved. |
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RU1C002ZP |
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Data Sheet |
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Electrical characteristics (Ta = 25 C) |
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Parameter |
Symbol |
Min. |
Typ. |
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Max. |
Unit |
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Conditions |
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Gate-source leakage |
IGSS |
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- |
- |
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10 |
A |
VGS= 10V, VDS=0V |
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Drain-source breakdown voltage |
V(BR)DSS |
20 |
- |
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- |
V |
ID= 1mA, VGS=0V |
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Zero gate voltage drain current |
IDSS |
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- |
- |
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1 |
A |
VDS= 20V, VGS=0V |
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Gate threshold voltage |
VGS (th) |
0.3 |
- |
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1.0 |
V |
VDS= 10V, ID= 100 A |
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- |
0.8 |
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1.2 |
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ID= 200mA, VGS= 4.5V |
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Static drain-source on-state |
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* |
- |
1.0 |
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1.5 |
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ID= 100mA, VGS= 2.5V |
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R |
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- |
1.3 |
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2.2 |
ID= 100mA, VGS= 1.8V |
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resistance |
DS (on) |
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- |
1.6 |
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3.5 |
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ID= 40mA, VGS= 1.5V |
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- |
2.4 |
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9.6 |
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ID= 10mA, VGS= 1.2V |
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Forward transfer admittance |
l Yfs l * |
0.2 |
- |
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S |
VDS= 10V, ID= 200mA |
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Input capacitance |
Ciss |
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- |
115 |
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pF |
VDS= 10V |
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Output capacitance |
Coss |
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- |
10 |
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- |
pF |
VGS=0V |
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Reverse transfer capacitance |
Crss |
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- |
6 |
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pF |
f=1MHz |
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Turn-on delay time |
td(on)* |
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6 |
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- |
ns |
VDD |
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10V, ID= 100mA |
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Rise time |
tr |
* |
- |
4 |
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ns |
VGS= 4.5V |
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Turn-off delay time |
td(off)* |
- |
17 |
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ns |
RL=100 |
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Fall time |
tf |
* |
- |
17 |
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ns |
RG=10 |
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Total gate charge |
Qg |
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- |
1.4 |
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nC |
VDD |
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10V, ID= 200mA |
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Gate-source charge |
Qgs |
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- |
0.3 |
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- |
nC |
VGS= 4.5V |
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Gate-drain charge |
Qgd |
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- |
0.3 |
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- |
nC |
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*Pulsed |
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Body diode characteristics (Source-Drain) |
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Parameter |
Symbol |
Min. |
Typ. |
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Max. |
Unit |
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Conditions |
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Forward Voltage |
VSD * |
- |
- |
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1.2 |
V |
Is= 200mA, VGS=0V |
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*Pulsed
www.rohm.com |
2/5 |
2011.09 - Rev.A |
© 2011 ROHM Co., Ltd. All rights reserved. |
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