ROHM RTR040N03 Technical data

Transistors

2.5V Drive Nch MOS FET

RTR040N03

zStructure
Silicon N-channel
MOS FET

zFeatures

1) Low On-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TSMT3).

zApplication
Power switching, DC / DC converter .

zExternal dimensions (Unit : mm)

TSMT3

(1) Gate
(2) Source
(3) Drain

2.9

0.4

(3)

(2)

(1)

0.950.95

1.9

Abbreviated symbol : QV

1.0MAX

2.8

1.6

Each lead has same dimensions

RTR040N03

0.85

0.7

0

~

0.1

0.6

~

0.3

0.16

zPackaging specifications

Type

RTR040N03

Package
Code
Basic ordering unit (pieces)

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Symbol

DSS
GSS

D

DP

S

SP

zThermal resistance

Parameter Symbol Limits Unit

Channel to ambient

∗ Mounted on a ceramic board

Rth (ch-a) 125

zEquivalent circuit

(3)

(1)

∗1

∗2

Limits Unit

30
12

±4.0

∗1

±16

0.8

∗1
∗2

D

16

1.0

VV
VV

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

AI
AI
AI
AI

WP

(2)

(1) Gate
(2) Source
(3) Drain

°CTch 150
°CTstg −55 to +150

∗

°C / W

Rev.A 1/4

Transistors

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time

Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

V

(BR) DSS

V

R

I

GSS

I

DSS

GS (th)

DS (on)

Y

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

Q

Q

gs

Q

gd

∗

∗

fs

∗

∗

∗

∗

f

∗

g

∗

∗

Min. Typ. Max.

−−10 µAV

30 −−VID= 1mA, VGS=0V

−−1 µAV

0.5 − 1.5 V V

− 34 48 I

− 36 50 mΩ

− 47 66 I

4.0 −−SV

− 475 − pF V

− 12070− pF V

−

10

−

18

−

37

−

19

−

5.9

−

−

−−

8.3 nC

1.0

2.0

zBody diode characteristics (Source-drain) (Ta=25°C)

Unit

=12V, VDS=0V

GS

= 30V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 4.0A, VGS= 4.5V

mΩ

D

= 4.0A, VGS= 4.0V

I

D

= 4.0A, VGS= 2.5V

mΩ

D

= 10V, ID= 4.0A

DS

= 10V

DS

=0V

GS

− pF f=1MHz

− ns

− ns

− ns

− ns

−

nC
nC

ID= 2.0A

V

DD

GS

= 4.5V

V
R

L

=7.5Ω

R

G

=10Ω

15V

V

DD

V

= 4.5V

GS

I

= 4.0A

D

R

L

=3.75Ω

R

G

=10Ω

15V

RTR040N03

Conditions

Parameter Symbol

Min. Typ. Max.

V

SD

Unit

−−1.2 VForward voltage

IS= 0.8A, VGS=0V

Conditions

Rev.A 2/4