ROHM RTR040N03 Technical data

Transistors

2.5V Drive Nch MOS FET

RTR040N03

zStructure Silicon N-channel MOS FET

zFeatures

1) Low On-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TSMT3).

zApplication Power switching, DC / DC converter .

zExternal dimensions (Unit : mm)

TSMT3

(1) Gate (2) Source (3) Drain

2.9

0.4

(3)

(2)

(1)

0.950.95

1.9

Abbreviated symbol : QV

1.0MAX

2.8

1.6

Each lead has same dimensions

RTR040N03

0.85

0.7

0

~

0.1

0.6

~

0.3

0.16

zPackaging specifications

Type

RTR040N03

Package Code Basic ordering unit (pieces)

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter Drain-source voltage Gate-source voltage

Drain current

Source current (Body diode)

Continuous Pulsed Continuous

Pulsed Total power dissipation Channel temperature Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Symbol

DSS GSS

D

DP

S

SP

zThermal resistance

Parameter Symbol Limits Unit

Channel to ambient

∗ Mounted on a ceramic board

Rth (ch-a) 125

zEquivalent circuit

(3)

(1)

∗1

∗2

Limits Unit

30 12

±4.0

∗1

±16

0.8

∗1 ∗2

D

16

1.0

VV VV

∗1 ESD PROTECTION DIODE ∗2 BODY DIODE

AI AI AI AI

WP

(2)

(1) Gate (2) Source (3) Drain

°CTch 150 °CTstg −55 to +150

∗

°C / W

Rev.A 1/4

Transistors

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage

Static drain-source on-state resistance

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time

Total gate charge Gate-source charge Gate-drain charge

∗Pulsed

V

(BR) DSS

V

R

I

GSS

I

DSS

GS (th)

DS (on)

Y

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

Q

gs

Q

gd

∗

fs

∗

f

∗

g

∗

Min. Typ. Max.

−−10 µAV

30 −−VID= 1mA, VGS=0V

−−1 µAV

0.5 − 1.5 V V

− 34 48 I

− 36 50 mΩ

− 47 66 I

4.0 −−SV

− 475 − pF V

− 12070− pF V

−

10

−

18

−

37

−

19

−

5.9

−

−−

8.3 nC

1.0

2.0

zBody diode characteristics (Source-drain) (Ta=25°C)

Unit

=12V, VDS=0V

GS

= 30V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 4.0A, VGS= 4.5V

mΩ

D

= 4.0A, VGS= 4.0V

I

D

= 4.0A, VGS= 2.5V

mΩ

D

= 10V, ID= 4.0A

DS

= 10V

DS

=0V

GS

− pF f=1MHz

− ns

−

nC nC

ID= 2.0A

V

DD

GS

= 4.5V

V R

L

=7.5Ω

R

G

=10Ω

15V

V

DD

V

= 4.5V

GS

I

= 4.0A

D

R

L

=3.75Ω

R

G

=10Ω

15V

RTR040N03

Conditions

Parameter Symbol

Min. Typ. Max.

V

SD

Unit

−−1.2 VForward voltage

IS= 0.8A, VGS=0V

Conditions

Rev.A 2/4

Transistors

zElectrical characteristic curves

10

(A)

1

D

Ta=

125°

C

75°C 25°

C

−

25°

0.1

0.01

DRAIN CURRENT : I

0.001

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Fig.1 Typical Transfer Characteristics

1000

(mΩ)

DS (on)

R

100

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

10

0.01 10.1 10

Fig.4 Static Drain-Source On-State

100

(A)

S

10

I

1

C

GATE-SOURCE VOLTAGE : VGS (V)

Ta

=

125

°C

75°

C

25°C

−

25°C

DRAIN CURRENT : I

Resistance vs. Drain Current

Ta

=

125°C

75°C 25°C

−25

°

C

VDS=10V pulsed

VGS=2.5V pulsed

(A)

D

VGS=0V pulsed

1000

(mΩ)

DS (on)

R

Ta

=

125°

C

75°C 25°

C

−

25°

100

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

10

0.01 10.1 10

C

DRAIN CURRENT : I

VGS=4.5V pulsed

(A)

D

Fig.2 Static Drain-Source On-State

Resistance vs. Drain Current

200 180

(mΩ)

160

DS (on)

R

140 120 100

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

ID=4.0A

80 60 40

ID=2.0A

20

002468101

GATE SOURCE VOLTAGE : V

Fig.5

Static Drain-Source On-State

Resistance vs. Gate-Source Voletage

Ta=25°C pulsed

(V)

GS

2

1000

C (pF)

100

Ta=25 f=1MHz

GS

V

Ciss

Coss

=0V

°C

RTR040N03

1000

(mΩ)

DS (on)

R

Ta

=

125°

C

75°C 25°

C

−

25°

100

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

10

0.01 10.1 10

Fig.3 Static Drain-Source On-State

1000

(mΩ)

DS (on)

R

100

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

10

0.01 10.1 10

Fig.6 Static Drain-Source On-State

10000

1000

100

C

DRAIN CURRENT : I

D

Resistance vs. Drain Current

V

GS

=2.5V

V

GS

=4.0V

V

GS

=4.5V

DRAIN CURRENT : I

D

Resistance vs. Drain Current

t

f

t

d(off)

VGS=4.0V pulsed

(A)

VGS=25 pulsed

(A)

Ta=25 VDD=15V

GS

V R

G

pulsed

=4.5V

=10Ω

°C

t

0.1

SOURCE CURRENT :

0.01

1.00.50.0 1.5

SOURCE-DRAIN VOLTAGE : V

Fig.7 Source Current vs. Source-Drain Voltage

CAPACITANCE :

10

0.01 10.1 10 100

(V)

S

D

DRAIN SOURCE VOLTAGE : V

Crss

(V)

DS

SWITCHING TIME : t (ns)

Fig.8 Typical Capacitance vs. Drain-Source Voltage

r

10

1

0.01

DRAIN CURRENT : I

t

d(on)

10.1 10

(A)

D

Fig.9 Switching Characteristics

Rev.A 3/4

Transistors

5

Ta=25

°C

VDD=15V

D

=4.0V

I

(V)

G

=10Ω

R

GS

pulsed

4

V

3

2

1

GATE-SOURCE VOLTAGE :

0

12345678

TOTAL GATE CHARGE : Qg (nC)

Fig.10 Dynamic Input Characteristics

zMeasurement circuits

V

GS

R

G

D

I

D.U.T.

R

L

V

DD

RTR040N03

Pulse Width

90% t

r

90%

t

d(off)

50%50%

10%

90% t

r

t

off

V

DS

10%

V

GS

V

DS

10%

t

d(on)

t

on

Fig.11 Switching Time Test Circuit

V

I

G (Const.)

GS

R

G

D

I

D.U.T.

Fig.13 Gate Charge Test Circuit

Fig.12 Switching Time Waveforms

V

G

V

DS

R

L

V

GS

QgsQ

V

DD

Fig.14 Gate Charge Waveform

Q

g

gd

Charge

Rev.A 4/4

Appendix

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

ROHM RTR040N03 Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual

2.5V Drive Nch MOS FET

RTR040N03