ROHM RTR025N05 Technical data
2.5V Drive Nch MOSFET
RTR025N05
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
zApplication
Switching
zPackaging specifications zInner circuit
Type
RTR025N05
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Symbol
DSS
GSS
D
DP
S
SP
D
Limits Unit
45
±12
±2.5
∗1
±10
0.8
∗1
∗2
10
1.0
VV
VV
AI
AI
AI
AI
WP
°CTch 150
°CTstg −55 to +150
zThermal resistance
Parameter Symbol Limits Unit
Channel to ambient
∗ When mounted on a ceramic board
Rth (ch-a) 125
∗
°C / W
TSMT3
(1) Gate
(2) Source
(3) Drain
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
2.9
0.4
(3)
(2)
(1)
0.950.95
1.9
Abbreviated symbol : PW
(3)
∗1
(2)
1.0MAX
0.85
0.7
2.8
1.6
∗2
0
~
0.1
0.6
~
0.3
0.16
Each lead has same dimensions
(1) Gate
(2) Source
(3) Drain
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c
2009 ROHM Co., Ltd. All rights reserved.
○
2009.06 - Rev.A
G
D
Z
G
S
r
F
I
O
T
R
T
F
T
G
G
zElectrical characteristics (Ta=25°C)
Parameter Symbol
ate-source leakage
rain-source breakdown voltage
V
ero gate voltage drain current
ate threshold voltage
tatic drain-source on-state
esistance
V
R
orward transfer admittance
nput capacitance
utput capacitance
Reverse transfer capacitance
urn-on delay time
ise time
urn-off delay time
all time
otal gate charge
ate-source charge
ate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗Pulsed
I
GSS
(BR)DSS
I
DSS
GS (th)
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
r
t
t
d (off)
t
f
Q
g
Q
gs
Q
gd
V
SD
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Typ. Max.
−−±10 µAV
45 −−VID= 1mA, VGS=0V
−−1 µAVDS= 45V, VGS=0V
0.5 − 1.5 V VDS= 10V, ID= 1mA
− 95 130 I
− 100 140 mΩ
− 125 175 I
2.0 −−SV
− 250 − pF VDS= 10V
− 6030− pF VGS= 0V
−
−
−
−
−
−
−
−−nC
− pF f=1MHz
9
− ns
− ns
15
− ns
20
− ns
14
3.2
− nC
0.9
−
0.7
Min. Typ. Max.
−−1.2 VForward voltage IS= 2.5A, VGS=0V
Unit
mΩ
mΩ
nC
Unit
D
I
D
D
V
ID= 1.2A
V
R
R
V
I
D
V
R
R
Conditions
= ±12V, VDS=0V
GS
= 2.5A, VGS= 4.5V
= 2.5A, VGS= 4V
= 2.5A, VGS= 2.5V
= 10V, ID= 2.5A
DS
DD
25V
GS= 4.5V
L 20.8Ω
G=10Ω
25V
DD
= 2.5A
= 4.5V
GS
L 10Ω
G=10Ω
Conditions
Data Sheet RTR025N05
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c
2009 ROHM Co., Ltd. All rights reserved.
○
2009.06 - Rev.A
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