ROHM RTR025N05 Technical data

2.5V Drive Nch MOSFET

RTR025N05

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low On-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TSMT3).

zApplication

Switching

zPackaging specifications zInner circuit

Type

RTR025N05

Package
Code
Basic ordering unit (pieces)

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Symbol

DSS
GSS

D

DP

S

SP

D

Limits Unit

45

±12

±2.5

∗1

±10

0.8

∗1
∗2

10

1.0

VV
VV
AI
AI
AI
AI

WP

°CTch 150
°CTstg −55 to +150

zThermal resistance

Parameter Symbol Limits Unit

Channel to ambient

∗ When mounted on a ceramic board

Rth (ch-a) 125

∗

°C / W

TSMT3

(1) Gate
(2) Source
(3) Drain

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

2.9

0.4

(3)

(2)

(1)

0.950.95

1.9

Abbreviated symbol : PW

(3)

∗1

(2)

1.0MAX

0.85

0.7

2.8

1.6

∗2

0

~

0.1

0.6

~

0.3

0.16

Each lead has same dimensions

(1) Gate
(2) Source
(3) Drain

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2009.06 - Rev.A

G
D
Z
G

S
r

F
I
O

T
R
T
F

T
G

G

zElectrical characteristics (Ta=25°C)

Parameter Symbol

ate-source leakage

rain-source breakdown voltage

V

ero gate voltage drain current

ate threshold voltage

tatic drain-source on-state

esistance

V

R

orward transfer admittance

nput capacitance

utput capacitance

Reverse transfer capacitance

urn-on delay time

ise time
urn-off delay time
all time

otal gate charge

ate-source charge
ate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

I

GSS

(BR)DSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

r

t

t

d (off)

t

f

Q

g

Q

gs

Q

gd

V

SD

∗

∗

∗

∗

∗

∗

∗

∗

∗

∗

Min.

Typ. Max.

−−±10 µAV

45 −−VID= 1mA, VGS=0V

−−1 µAVDS= 45V, VGS=0V

0.5 − 1.5 V VDS= 10V, ID= 1mA

− 95 130 I

− 100 140 mΩ

− 125 175 I

2.0 −−SV

− 250 − pF VDS= 10V

− 6030− pF VGS= 0V

−

−

−

−

−

−

−

−−nC

− pF f=1MHz

9

− ns

− ns

15

− ns

20

− ns

14

3.2

− nC

0.9

−

0.7

Min. Typ. Max.

−−1.2 VForward voltage IS= 2.5A, VGS=0V

Unit

mΩ

mΩ

nC

Unit

D

I

D
D

V

ID= 1.2A
V
R
R

V

I

D

V
R
R

Conditions

= ±12V, VDS=0V

GS

= 2.5A, VGS= 4.5V
= 2.5A, VGS= 4V
= 2.5A, VGS= 2.5V

= 10V, ID= 2.5A

DS

DD

25V

GS= 4.5V
L 20.8Ω
G=10Ω

25V

DD

= 2.5A

= 4.5V

GS

L 10Ω
G=10Ω

Conditions

Data Sheet RTR025N05

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2009.06 - Rev.A

zBody diode characteristics curves

5

VGS= 10V

= 4.5V

V

GS

4

= 4.0V

V

GS

[A]

D

3

2

DRAI N CUR RENT : I

1

0

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE : VDS[V]

Fig.1 Typical Output C haracteristics(Ⅰ) Fig.2 Typical Output Character istics(Ⅱ)

VGS= 2.5V

VGS= 2.0V

VGS= 1.8V

Ta=25°C
Pulsed

5

VGS= 4.5V

= 4.0V

V

GS

4

V

= 2.5V

[A]

D

DRAI N CURRENT : I

GS

3

2

1

0

0246810

DRAIN-SOURCE VOLTAGE : V

VGS= 2.0V

VGS= 1.8V

Ta=25°C
Pulsed

DS

Data Sheet RTR025N05

10

VDS= 10V
Pulsed

[A]

D

1

Ta= 125°C

Ta= 75°C

0.1

Ta= 25°C

Ta= - 25°C

DRAI N CURRENT : I

0.01

0.001

00.511.522.5

[V]

GATE-SOURCE VOLTAGE : VGS[V]

Fig.3 Typical Transfer Characteristics

1000

Ta= 25°C
Pulsed

]

Ω

(on)[m

DS

100

RESISTANCE : R

STATIC DRAIN- SOURCE ON-STATE

10

0.01 0.1 1 10

DRAI N-CURRENT : I

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

1000

VGS= 2.5V

]

Pulsed

Ω

(on)[m

DS

100

RESISTANCE : R

STA T IC DRAI N-SOURCE O N -STATE

10

0.01 0.1 1 10

DRAI N-CU RRENT : ID[A]

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Curr ent(Ⅳ)

VGS= 2.5V
V

= 4.0V

GS

= 4.5V

V

GS

[A]

D

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25 °C

1000

VGS= 4.5V
Pulsed

]

Ω

(on)[m

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0.1 1 10

DRAI N-CURRENT : ID[A]

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

10

VDS= 10V
Pulsed

1

FORWARD TRANSFER

ADMITTANCE : |Yfs| [S]

0.1

0.01 0.1 1 10

DRAI N-CUR RENT : ID[A]

Fig.8 For ward Transfer Admittance
vs. Drain Current

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C

1000

VGS= 4.0V
Pulsed

]

Ω

(on)[m

DS

100

Ta=125°C

RESISTANCE : R

STATIC DRAIN- SOURCE ON-STATE

10

0.01 0.1 1 10

DRAI N-CURRENT : ID[A]

Fig.6 Static Drain- Source On-State
Resistance vs. Drain Current(Ⅲ)

10

VGS=0V
Pulsed

1

0.1

REVERSE DRAIN CURRENT : Is [A]

0.01

00.511.5

SOU RCE-DRAIN VOLTA GE : VSD [V]

Fig.9 Reverse Drain Current
v s. Sou rse-Drain Voltage

Ta=75°C
Ta=25°C
Ta= -25°C

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

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2009 ROHM Co., Ltd. All rights reserved.

○

2009.06 - Rev.A

F

it

%

%

V
V

Pulse Width

F

it

S

Fig.2-2 Gate Charge Waveform

V

Data Sheet RTR025N05

350

]

Ω

300

250

(ON)[m

DS

200

150

100

RESISTANCE : R

STATIC DRA IN-SOURCE ON-S T ATE

50

0

0246 810

GATE-SOURCE VOLTAGE : VGS[V]

Fig.10 Static Drain-Source On-State
Resistance vs. Gate Sou rce Voltage

ID= 2.5A

ID= 1.2A

1000

100

CAPACITANCE : C [pF]

10

0.01 0.1 1 10 100

Crss
Ta=25°C
f=1MHz
V

=0V

GS

DRAI N-SOURCE VOL T AGE : V

Fig.13 Typical Capacitance
vs. Drain-Source Voltage

Coss

zMeasurement circuits

VGS

RG

Ciss

I

D.U.T.

D

Ta=25°C
Pulsed

[V]

DS

RL

VDD

1000

100

SWITCHING TIME : t [ns]

td(off)

t

f

10

t

1

0.01 0.1 1 10

DRAI N-CURRENT : ID[A]

Fig.11 Switching Characteristics

VDS

GS
DS

t

d(on)

Ta=25°C

= 25V

V

DD

V

=4.5V

GS

R

=10Ω

G

Pulsed

td(on)

r

90%

10%

10%

90%

t

t

t

on

d(off)

r

5

[V]

GS

4

3

2

1

GAT E-SO URCE VO LTAGE : V

0

01234

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

50%50%

10

90
t

r

t

off

Ta=25°C
V
I
R
Pulsed

DD

= 2.5A

D

G

= 25V

=10Ω

ig.1-1 Switching Time Measurement Circu

I

G (Const.)

R

ig.2-1 Gate Charge Measurement Circu

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2009 ROHM Co., Ltd. All rights reserved.

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V

GS

G

D

I

D.U.T.

V

D

R

L

V

DD

Fig.1-2 Switching Waveforms

V

G

Q

g

GS

QgsQ

gd

Charge

2009.06 - Rev.A

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