ROHM RTR025N03 Technical data
RTR025N03
Transistors
2.5V Drive Nch MOS FET
RTR025N03
zStructure zExternal dimensions (Unit : mm)
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Space saving−small surface mount package (TSMT3).
3) Low voltage drive (2.5V drive).
zApplications
Switching
zPackaging specifications and h
Package
Type
RTR025N03
Code
Basic ordering unit (pieces)
FE zInner circuit
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
D
∗1
∗1
∗2
Limits Unit
30
12
±2.5
±10
0.8
10
1.0
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol Limits Unit
∗
125
TSMT3
(1) Gate
(2) Source
(3) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
°C/WRth(ch-a)
2.9
0.4
(3)
(2)
(1)
0.950.95
1.9
Abbreviated symbol : QZ
(1)
1.0MAX
2.8
1.6
Each lead has same dimensions
∗1
0.16
0.85
(3)
(2)
0.7
0
~
0.1
0.6
~
0.3
∗2
(1) Gate
(2) Source
(3) Drain
1/2
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
V
(BR) DSS
V
R
I
GSS
I
DSS
GS (th)
DS (on)
Y
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
Q
Q
gs
Q
gd
∗
∗
fs
∗
∗
∗
∗
f
∗
g
∗
∗
Min.−Typ. Max.
− 10 µAVGS=12V, VDS=0V
30 −−VID= 1mA, VGS=0V
−−1 µAV
0.5 − 1.5 V V
− 66 92 I
− 70 98 mΩ
− 95 133 I
2.0 −−SV
− 220 − pF V
− 6035− pF V
−
9
−
15
−
25
−
10
−
3.3
−
−
−−nC
4.6 nC
0.7
1.0
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
Min. Typ. Max.
V
SD
−−1.2 V IS= 0.8A, VGS=0VForward voltage
Unit
= 30V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 2.5A, VGS= 4.5V
mΩ
D
= 2.5A, VGS= 4V
I
D
= 2.5A, VGS= 2.5V
mΩ
D
= 10V, ID= 2.5A
DS
= 10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
VDD 15V
ID= 1.25A
V
GS
= 4.5V
R
L
=12Ω
R
G
=10Ω
V
15V
DD
I
= 2.5A
D
L
=6Ω
R
Unit
Conditions
V
= 4.5V
GS
R
G
=10Ω
Conditions
RTR025N03
2/2
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