ROHM RTQ045N03 Technical data

Transistors

C

RTQ045N03

2.5V Drive Nch MOS FET

RTQ045N03

zStructure

Silicon N-channel
MOS FET

zFeatures

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TSMT6) .

zApplication

Power switching, DC / DC converter.

zPackaging specifications

Type

RTQ045N03

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Total power dissipation

Channel temperature
Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

Limits Unit

30
12

±4.5

∗1

±18

1.0

∗1

4.0

∗2

1.25

zThermal resistance

Parameter Symbol Limits Unit

hannel to ambient

∗ Mounted on a ceramic board.

Rth (ch-a) 100

∗

Rev.C 1/3

zExternal dimensions (Unit : mm)

TSMT6

1.0MAX

0.85

(4)

0.7

2.8

1.6

(3)

0.16

Each lead has same dimensions

(6)

1pin mark

2.9

1.9

0.950.95

(5)

(2)

(1)

0.4

Abbreviated symbol : QM

zEquivalent circuit

(6) (5)

∗2

(1)

∗1 ESD PROTECTION DIODE

VV
VV
AI
AI
AI
AI

WP

°CTch 150
°CTstg −55~+150

∗2 BODY DIODE

∗A protection diode is included between the gate and

the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.

(2) (3)

°C / W

0~0.1

0.6

~

0.3

(4)

(6) (5) (4)

(1)

∗1

(2) (3)

(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain

Transistors

RTQ045N03

zElectrical characteristics (T a=25°C)

Parameter Symbol
Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

V

(BR) DSS

V

R

I

GSS

I

DSS

GS (th)

DS (on)

Y

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

Q

Q

gs

Q

gd

∗

∗

fs

∗

∗

∗

∗

f

∗

g

∗

∗

Min. Typ. Max.

Unit

Conditions

−−±10 µAVGS=±12V, VDS=0V

30 −−VI

−−1 µAV

0.5 − 1.5 V V

− 30 43 I

− 32 45 mΩ I

− 42 60 I

4.5 −−SI

− 540 − pF V

− 150

100

−

−

−

−

−

−

−

−−nC I

− pF V

− pF f=1MHz

13

− ns

31

− ns

45

− ns

30

− ns

7.6

10.7 nC

1.2

− nC V

2.7

=1mA, VGS=0V

D

=30V, VGS=0V

DS

=10V, ID=1mA

DS

=4.5A, VGS=4.5V

D

=4.5A, VGS=4V

D

=4.5A, VGS=2.5V

D

=4.5A, VDS=10V

D

=10V

DS

=0V

GS

=2.25A, VDD 15V

I

D

V

=4.5V

GS

R

=6.67Ω

L

R

=10Ω

G

15V

V

DD

=4.5V

GS

=4.5A

D

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol
Forward voltage

∗Pulsed

Min. Typ. Max.

∗

V

SD

Unit

Conditions

−−1.2 V IS=4A, VGS=0V

Rev.C 2/3