ROHM RTQ035N03 Technical data

RTQ035N03

Transistors

2.5V Drive Nch MOS FET

RTQ035N03

zStructure zExternal dimensions (Unit : mm)
Silicon N-channel MOS FET

zFeatures

1) Low On-resistance.

2) Space saving, small surface mount package (TSMT6).

3) Low voltage drive (2.5V drive).

zApplications

Switching

zPackaging specifications zInner circuit

Type

RTQ035N03

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

∗1

∗1
∗2

Limits Unit

30
12

±3.5

±15

1.0

4.0

1.25
150

−55 to +150

zThermal resistance

Parameter

Channel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

∗

100

TSMT6

2.9

1.9

0.950.95

(6)

(5)

(2)

1pin mark

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(1)

0.4

Abbreviated symbol : QP

(6)

(1)

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

°C/WRth(ch-a)

1.0MAX

0.85

(4)

0.7

2.8

1.6

(3)

Each lead has same dimensions

0~0.1

0.6

~

0.3

0.16

(5)

∗2

(2)

(4)

∗1

(3)

(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain

1/2

Transistors

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

V

(BR) DSS

V

R

I

GSS

I

DSS

GS (th)

DS (on)

Y

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

Q

Q

gs

Q

gd

∗

∗

fs

∗

∗

∗

∗

f

∗

g

∗

∗

Min.−Typ. Max.

− 10 µAVGS=12V, VDS=0V

30 −−VID= 1mA, VGS=0V

−−1 µAV

0.5 − 1.5 V V

− 38 54 I

− 40 56 mΩ

− 55 77 I

3.0 −−SV

− 285 − pF V

− 9055− pF V

−

8

−

12

−

29

−

13

−

4.6

−

−

−−nC I

6.4 nC

0.7

1.5

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min. Typ. Max.

∗

V

SD

−−1.2 V IS= 4A, VGS=0VForward voltage

Unit

= 30V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 3.5A, VGS= 4.5V

mΩ

D

I

= 3.5A, VGS= 4.0V

D

mΩ

= 3.5A, VGS= 2.5V

D

= 10V, ID= 3.5A

DS

= 10V

DS

=0V

GS

− pF f=1MHz

V

− ns

− ns

− ns

− ns

− nC V

DD

ID= 1.75A
V

GS

= 4.5V

R

L

=8.57Ω

R

G

=10Ω

15V

V

DD

= 4.5V

GS

= 3.5A

D

Unit

RTQ035N03

Conditions

15V

Conditions

2/2