ROHM RTQ025P02 Schematic [ru]

Transistor

DC-DC Converter (−20V, −2.5A)

RTQ025P02

zFeatures

1) Low On-resistance.(140mΩ at 2.5V)

2) High Power Package.

3) High speed switching.

4) Low voltage drive.(2.5V)

zApplications
DC-DC converter

zStructure

Silicon P-channel
MOSFET

zPackaging specifications

Package

Type

RTQ025P02

Code
Basic ordering unit

(pieces)

Taping

TR

3000

zExternal dimensions (Units : mm)

TSMT6

2.8

1.6

)

1

(
)

2

(

0.4

)

3

(

0.16

Abbreviatedsymbol : TQ

zEquivalent circuit

∗2

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(2) (3)

RTQ025P02

(6)(5)(4)

2.9

0.85

Each lead has same dimensions

(4)(5)(6)

∗1

(1)DRAIN
(2)DRAIN
(3)GATE
(4)SOURCE
(5)DRAIN
(6)DRAIN

1/4

Transistor

zAbsolute maximum ratings (Ta=25°C)

I

V

(BR)DSS

I

V

R

DS(on)

Y
C

C
C
t

d(on)

t

d(off)

Qg

Qgs

Qgd

VSD

GSS

DSS

GS(th)

fs

iss

oss

rss

r

t

f

t

Symbol

V
V

I

I
P

Tch

Tstg

∗

∗

∗
∗

∗
∗

DSS

GSS

I

D

DP

I

S

SP

D

Min.

−20

−0.7

2.0

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

Parameter
Drain−source voltage
Gate−source voltage

Drain current

Source current
(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature

<

∗1 Pw 10µs, Duty cycle 1%

=

∗2 Mounted on a ceramic board

<

=

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

Foward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time

Total gate charge
Gate-source charge
Gate-drain charge

∗PULSED

Body diode characteristics (source-drain characteristics)

Forward voltage

Limits Unit

−20
±12

±2.5

±10

−1

−4

1.25
150

−55~+150

Typ. Max.

−

−

−

−

72

Unit

±10

−

−1

−2.0

100

80 110

140

190

−

−

580
110

80
12

20
40
17

6.4

1.4

1.9

−

−

−

−

−

−

−

−

−

−

−1.2

−

GS

V

µA

V

I

D

=−1 , VGS=0V

µA

V

DS

V

DS

V

mΩ

I

D

=−2.5A, VGS=−4.5V

I

D

=−2.5A, VGS=−4V

mΩ

D

I

mΩ

S

V

DS

pF

DS

V

pF

=1MHz

f

pF

ns

D

I

ns

DD

V
V

GS

ns

R
R

ns

nC

V

DD

nC

GS

V

I

D

nC

I

S

V

V
V
A

∗1

A
A

∗1

A

∗2

W

°C
°C

Conditions

=±12V, VDS=0V

mA,

=−20V, VGS=0V
=−10V, ID=−1

=−1.2A, VGS=−2.5V

=−10V, ID=−1.2A

=−10V,

=−1.2A

−15V

=−4.5V

L

=12.5Ω

GS

=10Ω

−15V

=−4.5V

=−2.5A

=−1A, VGS=0V

mA

V

GS

=0V

RTQ025P02

2/4