Transistor
DC-DC Converter (−20V, −2.5A)
RTQ025P02
zFeatures
1) Low On-resistance.(140mΩ at 2.5V)
2) High Power Package.
3) High speed switching.
4) Low voltage drive.(2.5V)
zApplications
DC-DC converter
zStructure
Silicon P-channel
MOSFET
zPackaging specifications
Package
Type
RTQ025P02
Code
Basic ordering unit
(pieces)
Taping
TR
3000
zExternal dimensions (Units : mm)
TSMT6
2.8
1.6
)
1
(
)
2
(
0.4
)
3
(
0.16
Abbreviatedsymbol : TQ
zEquivalent circuit
∗2
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(2) (3)
RTQ025P02
(6)(5)(4)
2.9
0.85
Each lead has same dimensions
(4)(5)(6)
∗1
(1)DRAIN
(2)DRAIN
(3)GATE
(4)SOURCE
(5)DRAIN
(6)DRAIN
1/4
Transistor
zAbsolute maximum ratings (Ta=25°C)
I
V
(BR)DSS
I
V
R
DS(on)
Y
C
C
C
t
d(on)
t
d(off)
Qg
Qgs
Qgd
VSD
GSS
DSS
GS(th)
fs
iss
oss
rss
r
t
f
t
Symbol
V
V
I
I
P
Tch
Tstg
∗
∗
∗
∗
∗
∗
DSS
GSS
I
D
DP
I
S
SP
D
Min.
−20
−0.7
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Parameter
Drain−source voltage
Gate−source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
<
∗1 Pw 10µs, Duty cycle 1%
=
∗2 Mounted on a ceramic board
<
=
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Foward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗PULSED
Body diode characteristics (source-drain characteristics)
Forward voltage
Limits Unit
−20
±12
±2.5
±10
−1
−4
1.25
150
−55~+150
Typ. Max.
−
−
−
−
72
Unit
±10
−
−1
−2.0
100
80 110
140
190
−
−
580
110
80
12
20
40
17
6.4
1.4
1.9
−
−
−
−
−
−
−
−
−
−
−1.2
−
GS
V
µA
V
I
D
=−1 , VGS=0V
µA
V
DS
V
DS
V
mΩ
I
D
=−2.5A, VGS=−4.5V
I
D
=−2.5A, VGS=−4V
mΩ
D
I
mΩ
S
V
DS
pF
DS
V
pF
=1MHz
f
pF
ns
D
I
ns
DD
V
V
GS
ns
R
R
ns
nC
V
DD
nC
GS
V
I
D
nC
I
S
V
V
V
A
∗1
A
A
∗1
A
∗2
W
°C
°C
Conditions
=±12V, VDS=0V
mA,
=−20V, VGS=0V
=−10V, ID=−1
=−1.2A, VGS=−2.5V
=−10V, ID=−1.2A
=−10V,
=−1.2A
−15V
=−4.5V
L
=12.5Ω
GS
=10Ω
−15V
=−4.5V
=−2.5A
=−1A, VGS=0V
mA
V
GS
=0V
RTQ025P02
2/4
Transistor
zElectrical characteristic curves
10
1
°C
Ta=125
(A)
D
Drain Current : −I
0.1
0.01
0.001
75
25
−25
0 0.5 1.0
°C
°C
°C
1.5
2.0 2.5 3.0 3.5 4.0
Gate−Source Voltage : −VGS[V]
Fig.1 Typical Transfer Characteristics
1000
Ta=125
C
75
C
25
C
C
−25
100
(on)[mΩ]
DS
R
Static Drain−Source On−State Resistance
10
0.1 1
Drain Current : −ID[A]
Fig.4 Static Drain−Source On−State
Resistance
VDS=−10V
pulsed
VGS=−4V
pulsed
vs.Drain−Current
1000
(on)[mΩ]
DS
R
Static Drain−Source On−State Resistance
Static Drain−Source On−State Resistance
10
V
GS
=−4V
−4.0V
−4.5V
100
10
0.1 1
Drain Current : −ID[A]
Fig.2 Static Drain−Source On−State
Resistance
1000
100
(on)[mΩ]
DS
Ta=125
R
75
25
−25
10
0.1 1
C
C
C
C
vs.Drain Current
Drain Current : −ID[A]
Fig.5 Static Drain−Source On−State
Resistance
vs.Drain−Current
Ta=25 C
pulsed
VGS=−2.5V
pulsed
Static Drain−Source On−State Resistance
10
10
RTQ025P02
1000
Ta=125
C
75
C
25
C
−25
C
0.1 1
Drain Current : −ID[A]
Fig.3 Static Drain−Source On−State
Resistance
Ta=125
C
75
C
25
C
1
-25
C
0 0.5
Source−Drain Voltage : −V
Fig.6 Reverse Drain Current vs.
vs.Drain Current
1.0
Source-Drain Voltage
[A]
DR
Reverse Drain Current : −I
(on)[mΩ]
DS
R
0.01
100
10
10
0.1
1.5
SD
VGS=−4.5V
pulsed
VGS=0V
pulsed
[V]
10
2.0
10000
1000
100
Capacitance : C [pF]
10
0.01 0.1 1 10 100
Drain−Source Voltage : −V
Fig.7 Typical Capactitance
vs.Drain−Source Voltage
DS
Ta=25 C
f=1MHz
V
GS
Coss
Crss
[V]
=0V
Ciss
1000
100
10
Switching Time : t [ns]
1
0.01 0.1 1 10
tf
td(off)
tr
Drain Current : −I
Fig.8 Switching Characteristics
td(on)
D
[A]
Ta=25 C
DD
=−15V
V
GS
=−4.5V
V
G
=10Ω
R
pulsed
8
7
[V]
6
GS
5
4
3
2
Gate-Source Voltage: -V
1
0
06
1524
3
Ta=25 C
V
D
I
R
pulsed
DD
=−3.5V
G
=10Ω
=−15V
Total Gate Charge : Qg[nC]
Fig.9 Dynamic Input Characteristics
3/4
Transistor
zMeasurement circuits
V
10%
GS
50%
RTQ025P02
Pulse Width
50%
90%
V
GS
R
G
D.U.T.
D
I
V
DS
R
L
V
DD
Fig.10 Switching Time Measurement Circuit
IG(Const)
I
V
GS
R
G
D
D.U.T.
V
DS
R
L
V
DD
V
DS
90%
t
r
t
d(on)
t
on
Fig.11 Switching Waveforms
V
G
V
GS
Qgs Qgd
10%
Qg
10%
90%
t
f
t
d(off)
t
off
Charge
Fig.12 Gate Charge Measurement Circuit
Fig.13 Gate Charge Waveforms
4/4
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