Datasheet RTQ020N05 Datasheet (ROHM)

C

2.5V Drive Nch MOSFET

RTQ020N05

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low On-resistance.

2) Space savingsmall surface mount package (TSMT6).

3) Low voltage drive (2.5V drive).

zApplications

Switching

zPackaging specifications

Package

Type

RTQ020N05

Code
Basic ordering unit (pieces)

zInner circuit

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

∗1

∗1
∗2

Limits Unit

45

±12

±2
±8

1
8

1.25
150

−55 to +150

zThermal resistance

Parameter

hannel to ambient

∗ When mounted on a ceramic board

Symbol Limits Unit

∗

100

TSMT6

2.9

1.9

(6)

(5)

1pin mark

(6)

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(1)

0.4

Abbreviated symbol : PU

(5)

∗2

(2)

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

°C/WRth(ch-a)

1.0MAX

0.950.95

(4)

(2)

0.85

0.7

2.8

1.6

(4)

(3)

0.16

(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain

0~0.1

(3)

Each lead has same dimensions

∗1

0.6

~

0.3

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2009.10 - Rev.A

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

∗

Min.−Typ. Max.

−±10 µAVGS=±12V, VDS=0V

45 −−VID= 1mA, VGS=0V

−−1 µAV

0.5 − 1.5 V V

− 140 190 I

− 150 210 mΩ

− 200 280 I

1.6 −−SV

− 150 − pF V

− 4015− pF V

−

−

−

−

−

−

−

−−nC

− pF f=1MHz

8

− ns

14

− ns

16

− ns

10

−

−

2.3

0.8

− nC V

0.5

Min. Typ. Max.

−−1.2 V IS= 2A, VGS=0VForward voltage

Unit

= 45V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 2A, VGS= 4.5V

mΩ

D

= 2A, VGS= 4V

I

D

= 2A, VGS= 2.5V

mΩ

D

= 10V, ID= 2A

DS

= 10V

DS

=0V

GS

VDD 25V

ID= 1A

GS

= 4.5V

V

L

25Ω

R

ns

R

G

=10Ω

nC

25V ,ID= 2A

V

DD

= 4.5V

GS

RL 12.5Ω ,RG=10Ω

Unit

Data Sheet RTQ020N05

Conditions

Conditions

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2009.10 - Rev.A

V

V

V

V

zElectrical characteristics curves

2

1.5

[A]

D

1

0.5

DRAIN CURRENT : I

0

0 0.2 0.4 0.6 0.8 1

Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ)

VGS= 2.0V

DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V]

VGS= 10
VGS= 4.5
VGS= 4.0
VGS= 2.5

VGS= 1.8V

Ta=25°C
Pulsed

2

VGS= 10V

= 4. 5V

V

GS

= 4. 0V

V

[A]

D

DRAIN CURRENT : I

GS

1.5

0.5

= 2. 5V

V

GS

1

VGS= 1. 8V

0

0246810

VGS= 2. 0V

Ta=25°C
Pulsed

10

VDS= 10V
Pulsed

[A]

D

1

Ta= 125°C

Ta= 75°C

Ta= 25°C

0.1
Ta= - 25°C

DRAIN CURRENT : I

0.01

0.001

00.5 11.5 22.5

GATE- SOURC E VOLTAGE : VGS[V]

Fi g.3 T ypical Tran sfer C haracter isti cs

Data Sheet RTQ020N05

1000

Ta= 25°C
Pulsed

]

Ω

(on)[m

DS

100

VGS= 2. 5V
V

= 4. 0V

GS

V

= 4. 5V

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1110

DRAIN-CURRENT : I

Fi g.4 St atic D rain- Sourc e On-Stat e

R esistance vs. Drai n Cur rent(Ⅰ)

1000

VGS= 2.5V
Pulsed

]

Ω

(on)[m

DS

100

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : ID[A]

Fig .7 Static D rain-Source On- State

Resistance vs. Drain Curr ent(Ⅳ)

GS

[A]

D

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

1000

VGS= 4.5V
Pulsed

]

Ω

(on) [m

DS

100

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.5 St atic D rain- Sourc e On-Stat e

R esistance vs. Drai n Cur rent(Ⅱ)

10

VDS= 10V
Pulsed

1

FOR WARD T RANSF ER

ADMITT ANCE : |Yfs| [S]

0.1

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.8 F orward T ransfer Admitta nce
vs. D rain Curr ent

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C

1000

VGS= 4.0V
Pulsed

]

Ω

(on)[m

DS

100

Ta=125°C
Ta=75°C

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1110

DRAIN-CURRENT : ID[A]

Fi g.6 Stat ic Dr ain- Source On- State

Resistance vs. Drain Current(Ⅲ)

10

VGS=0V
Pulsed

1

0.1

REVER SE DRAIN CURRENT : Is [A]

0.01

00.511.5

SOURCE-DRAIN VOLTAGE : VSD [V]

Fi g.9 R ever se Dr ain Cur rent
vs. Sourse- Drain Volt age

Ta=25°C
Ta= -25°C

Ta= 125°C

Ta= 75°C
Ta= 25°C

Ta= -25°C

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2009.10 - Rev.A

F

it

S

%

V
V

F

S

Fig.2-2 Gate charge waveform

V

Data Sheet RTQ020N05

350

]

Ω

300

250

(ON)[m

DS

200

150

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

ID= 1. 0A

100

50

0

0246 810

GATE- SOURC E VOLTAGE : VGS[V]

Fi g.10 Static Drai n-Source On- State
Resistance vs. Gate Source Voltage

1000

100

10

CAPACITANCE : C [pF]

Crss

Coss

1

0.01 0.1 1 10 100

DR AIN-SOU RCE VOLT AGE : V

Fi g.13 T ypic al Capac itance
vs. Dr ain-Source Voltage

zMeasurement circuit

V

GS

D.U.T.

R

G

ID= 2. 0A

Ciss

I

D

Ta=25°C
Pulsed

Ta=25°C
f=1MH z
V

GS

DS

R

L

V

=0V

[V]

DD

1000

100

10

SWITC HING TIME : t [ns]

td(off)

t

f

td(on)

t

1

0.01 0.1 1 10

r

DRAIN-CURRENT : ID[A]

Fig.11 Switching Characteristics

Ta=25°C
V

= 25V

DD

V

=4.5V

GS

R

=10Ω

G

Pulsed

5

[V]

GS

4

3

2

1

GATE- SOURC E VOLTAGE : V

0

00.51 1.522.53

TOTAL GATE CHARGE : Qg [nC]

Fi g.12 Dynamic Input C haracter isti cs

Ta=25°C
V

= 25V

DD

I

= 2.0A

D

R

=10Ω

G

Pulsed

Pulse width

V

D

GS
DS

50%

10%

10% 10%

90%

50%

90% 90

t

d(on)

t

on

t

t

d(off)

r

t

f

t

off

ig.1-1 Switching time measurement circu

I

G(Const.)

R

G

ig.2-1 Gate charge measurement circuit

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Fig.1-2 Switching waveforms

VG

V

GS

D.U.T.

D

I

V

D

R

L

V

DD

GS

Q

gs

g

Q

Q

gd

Charge

2009.10 - Rev.A

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