ROHM RTQ020N05 Technical data
C
2.5V Drive Nch MOSFET
RTQ020N05
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Space savingsmall surface mount package (TSMT6).
3) Low voltage drive (2.5V drive).
zApplications
Switching
zPackaging specifications
Package
Type
RTQ020N05
Code
Basic ordering unit (pieces)
zInner circuit
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
D
∗1
∗1
∗2
Limits Unit
45
±12
±2
±8
1
8
1.25
150
−55 to +150
zThermal resistance
Parameter
hannel to ambient
∗ When mounted on a ceramic board
Symbol Limits Unit
∗
100
TSMT6
2.9
1.9
(6)
(5)
1pin mark
(6)
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1)
0.4
Abbreviated symbol : PU
(5)
∗2
(2)
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
°C/WRth(ch-a)
1.0MAX
0.950.95
(4)
(2)
0.85
0.7
2.8
1.6
(4)
(3)
0.16
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
0~0.1
(3)
Each lead has same dimensions
∗1
0.6
~
0.3
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2009 ROHM Co., Ltd. All rights reserved.
2009.10 - Rev.A
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗Pulsed
I
GSS
I
DSS
GS (th)
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
Q
gs
Q
gd
V
SD
∗
∗
∗
∗
∗
∗
∗
g
∗
∗
∗
Min.−Typ. Max.
−±10 µAVGS=±12V, VDS=0V
45 −−VID= 1mA, VGS=0V
−−1 µAV
0.5 − 1.5 V V
− 140 190 I
− 150 210 mΩ
− 200 280 I
1.6 −−SV
− 150 − pF V
− 4015− pF V
−
−
−
−
−
−
−
−−nC
− pF f=1MHz
8
− ns
14
− ns
16
− ns
10
−
−
2.3
0.8
− nC V
0.5
Min. Typ. Max.
−−1.2 V IS= 2A, VGS=0VForward voltage
Unit
= 45V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 2A, VGS= 4.5V
mΩ
D
= 2A, VGS= 4V
I
D
= 2A, VGS= 2.5V
mΩ
D
= 10V, ID= 2A
DS
= 10V
DS
=0V
GS
VDD 25V
ID= 1A
GS
= 4.5V
V
L
25Ω
R
ns
R
G
=10Ω
nC
25V ,ID= 2A
V
DD
= 4.5V
GS
RL 12.5Ω ,RG=10Ω
Unit
Data Sheet RTQ020N05
Conditions
Conditions
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2009 ROHM Co., Ltd. All rights reserved.
2009.10 - Rev.A
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