ROHM RTF025N03 Technical data
RTF025N03
Transistors
2.5V Drive Nch MOSFET
RTF025N03
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Space savin g, small surface mount package (TUMT3).
3) Low voltage drive (2.5V drive).
zApplications
Switching
zPackaging specifications zInner circuit
Type
RTF025N03
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
D
∗1
∗1
∗2
Limits Unit
30
12
±2.5
±10
0.6
10
0.8
150
−55 to +150
zThermal resistance
TUMT3
(1) Gate
(2) Source
(3) Drain
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
Abbreviated symbol : PL
∗1
0.2Max.
(3)
∗2
(2)
(1) Gate
(2) Source
(3) Drain
Rev.A 1/2
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
I
GSS
I
DSS
GS (th)
DS (on)
Y
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
Q
Q
gs
Q
gd
V
SD
∗
∗
fs
∗
∗
∗
∗
f
∗
g
∗
∗
Min.−Typ. Max.
− 10 µAVGS=12V, VDS=0V
30 −−VID= 1mA, VGS=0V
−−1 µAV
0.5 − 1.5 V V
− 48 67 I
− 50 70 mΩ
− 70 98 I
2 −−SV
− 270 − pF V
− 7040− pF V
−
8
−
15
−
27
−
11
−
3.7
−
0.7
−
1.2
−−nC I
Min. Typ. Max.
−−1.2 V IS= 0.6A, VGS=0VForward voltage
Unit
= 30V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 2.5A, VGS= 4.5V
mΩ
D
= 2.5A, VGS= 4V
I
D
= 2.5A, VGS= 2.5V
mΩ
D
= 10V, ID= 2.5A
DS
= 10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
5.2 nC
− nC V
V
DD
ID= 1.25A
V
GS
= 4.5V
R
L
=12Ω
R
G
=10Ω
V
15V
DD
= 4.5V
GS
= 2.5A
D
Unit
RTF025N03
Conditions
15V
Conditions
Rev.A 2/2
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