Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
RTF016N05
Nch 45V 1.6A Power MOSFET
lOutline
V
DSS
45V
R
DS(on)
(Max.)
190mW
I
D
1.6A
P
D
0.8W
lFeatures
lInner circuit
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TUMT3).
4) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Type
Packaging
Taping
lApplication
Reel size (mm)
180
DC/DC converters
Tape width (mm)
8
Basic ordering unit (pcs)
3,000
Drain - Source voltage
V
DSS
45
V
Taping code
TL
Marking
PU
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Continuous drain current
I
D
*1
1.6
A
Pulsed drain current
I
D,pulse
*2
6.4
A
Power dissipation
Gate - Source voltage
V
GSS
12
V
P
D
*3
0.8
W
P
D
*4
0.32
W
Junction temperature
T
j
150
°C
Range of storage temperature
T
stg
-55 to +150
°C
(1)
(2)
(3)
*1 ESD PROTECTION DIODE
*2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
TUMT3
1/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RTF016N05
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
lThermal resistance
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - ambient
R
thJA
*4
--391
°C/W
Thermal resistance, junction - ambient
R
thJA
*3
--156
°C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
V
Breakdown voltage
temperature coefficient
ΔV
(BR)DSS
ΔT
j
ID = 1mA
referenced to 25°C
-41-
mV/°C
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, ID = 1mA
45--
mA
Gate - Source leakage current
I
GSS
V
GS
= 12V, V
DS
= 0V
-
-
10
mA
Zero gate voltage drain current
I
DSS
V
DS
= 45V, V
GS
= 0V
--1
V
Gate threshold voltage
temperature coefficient
ΔV
(GS)th
ΔT
j
ID = 1mA
referenced to 25°C
-
-2.5
-
mV/°C
Gate threshold voltage
V
GS (th)
V
DS
= 10V, ID = 1mA
0.5-1.5-140
190-230
320
f = 1MHz, open drain
Static drain - source
on - state resistance
R
DS(on)
*5
mW
Gate input resistannce
R
G
W
S-10
-
Transconductance
gfs
*5
V
DS
= 10V, ID = 1.6A
1.5
3.5
-
VGS=4.0V, ID=1.6A
-
150
210
VGS=2.5V, ID=1.6A
-
200
280
VGS=4.5V, ID=1.6A, Tj=125°C
VGS=4.5V, ID=1.6A
2/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RTF016N05
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
pF
Output capacitance
C
oss
V
DS
= 10V
-40-
Reverse transfer capacitance
C
rss
f = 1MHz
Input capacitance
C
iss
V
GS
= 0V
-
150--15-
Turn - on delay time
t
d(on)
*5
V
DD
⋍ 25V, V
GS
= 4.5V
-8-
ns
Rise time
t
r
*5
ID = 0.8A
-14-
Turn - off delay time
t
d(off)
*5
RL = 31.3W
-16-
Fall time
t
f
*5
RG = 10W
-10-
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.-0.8
-
Gate - Drain charge
Q
gd
*5
-
0.5
-
nC
Gate - Source charge
Q
gs
*5
V
DD
⋍ 25V, ID = 1.6A
VGS = 4.5V
Total gate charge
Q
g
*5
V
DD
⋍ 25V, ID = 1.6A
VGS = 4.5V
-
2.3
-
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
A
Forward voltage
V
SD
*5
V
GS
= 0V, Is = 1.6A
--1.2
V
Inverse diode continuous,
forward current
IS
*1
Ta = 25°C
--0.6
3/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RTF016N05
lElectrical characteristic curves
0.1
1
10
100
1000
0.0001 0.01 1 100
T
a
=25ºC
Single Pulse
0.001
0.01
0.1
1
10
0.0001 0.01 1 100
T
a
=25ºC
Single Pulse
Rth(ch
-a)=156ºC/W
Rth(ch
-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
top D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
Fig.1 Power Dissipation Derating Curve
Power Dissipation : P
D
/P
D
max. [%]
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
Drain Current : I
D
[A]
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r
(t)
Pulse Width : PW [s]
Fig.4 Single Pulse Maxmum Power dissipation
Peak Transient Power : P(W)
Pulse Width : PW [s]
0
20
40
60
80
100
120
0 50 100 150 200
0.01
0.1
1
10
0.1 1 10 100
Operation in this area
is limited by RDS(on)
( VGS = 4.5V )
PW = 100μs
PW = 1ms
PW = 10ms
DC Operation
T
a
=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
4/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RTF016N05
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Drain Current : I
D
[A]
Drain - Source Voltage : VDS [V]
Fig.6 Typical Output Characteristics(II)
Drain - Source Voltage : VDS [V]
Drain Current : I
D
[A]
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 0.2 0.4 0.6 0.8 1
Ta=25ºC
VGS= 1.8V
VGS= 10V
VGS= 4.5V
VGS= 4.0V
VGS= 2.5V
VGS= 2.0V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 2 4 6 8 10
VGS= 1.8V
Ta=25ºC
VGS= 2.0V
VGS= 10V
VGS= 4.5V
VGS= 4.0V
VGS= 2.5V
5/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RTF016N05
lElectrical characteristic curves
0
1
2
-50 0 50 100 150
VDS=10V
ID=1mA
0.1
1
10
0.01 0.1 1 10
VDS= 10V
Ta= -25ºC
Ta= 25ºC
Ta= 75ºC
Ta= 125ºC
Fig.7 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : V
(BR)DSS
[V]
Junction Temperature : Tj [°C]
Fig.8 Typical Transfer Characteristics
Gate - Source Voltage : VGS [V]
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : V
GS(th)
[V]
Junction Temperature : Tj [°C]
Fig.10 Transconductance vs. Drain Current
Transconductance : g
fs
[S]
Drain Current : ID [A]
Drain Current : I
D
[A]
0
20
40
60
-50 0 50 100 150
V
GS
=0V
ID=1mA
0.001
0.01
0.1
1
10
0 1 2 3
VDS= 10V
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
6/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RTF016N05
lElectrical characteristic curves
0
50
100
150
200
250
300
350
0 2 4 6 8 10
Ta=25ºC
ID= 0.8A
ID= 1.6A
Fig.11 Drain CurrentDerating Curve
Drain Current Dissipation
: I
D
/I
D
max. (%)
Junction Temperature : Tj [ºC]
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : ID [A]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Gate - Source Voltage : VGS [V]
0
0.2
0.4
0.6
0.8
1
1.2
-25 0 25 50 75 100 125 150
0
50
100
150
200
250
-50 -25 0 25 50 75 100 125 150
V
GS
=4.5V
ID=1.6A
10
100
1000
0.1 1 10
.
Ta= 25ºC
VGS= 2.5V
VGS= 4.0V
VGS= 4.5V
7/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RTF016N05
lElectrical characteristic curves
10
100
1000
0.1 1 10
VGS= 4.5V
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
10
100
1000
0.1 1 10
VGS= 4.0V
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
10
100
1000
0.1 1 10
VGS= 2.5V
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
Fig.15 Static Drain-Source On-State
Resistance vs. Drain Current(II)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : ID [A]
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : ID [A]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : ID [A]
8/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RTF016N05
lElectrical characteristic curves
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : VDS [V]
Fig.20 Dynamic Input Characteristics
Gate - Source Voltage : V
GS
[V]
Total Gate Charge : Qg [nC]
Fig.19 Switching Characteristics
Switching Time : t [ns]
Drain Current : ID [A]
Fig.21 Source Current
vs. Source Drain Voltage
Source Current : I
S
[A]
Source-Drain Voltage : VSD [V]
1
10
100
1000
0.01 0.1 1 10 100
C
iss
C
rss
Ta=25ºC
f=1MHz
VGS=0V
C
oss
1
10
100
1000
0.01 0.1 1 10
t
f
t
d(on)
t
d(off)
Ta=25ºC
VDD=25V
VGS=4.5V
RG=10W
t
r
0
2
4
6
8
10
0 1 2 3 4 5
Ta=25ºC
VDD= 25V
ID= 1.6A
RG=10W
0.01
0.1
1
10
0 0.5 1 1.5
VGS=0V
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
9/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RTF016N05
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
10/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RTF016N05
lDimensions (Unit : mm)
Dimension in mm/inches
TUMT3
Patterm of terminal position areas
E
L
c
y
S
A1 A2
A
S
b2
l1
A
e b
x S A
D
H
E
e
e1
Lp
MIN MAX MIN MAX
A - 0.85 - 0.033
A1 0.00 0.10 0 0.004
A2 0.72 0.82 0.028 0.032
b 0.25 0.40 0.01 0.016
c 0.12 0.22 0.005 0.009
D 1.90 2.10 0.075 0.083
E 1.60 1.80 0.063 0.071
e
HE 2.00 2.20 0.079 0.087
L
Lp - 0.40 - 0.016
x - 0.10 - 0.004
y - 0.10 - 0.004
MIN MAX MIN MAX
e1
b2 - 0.50 - 0.02
l1 - 0.50 - 0.02
DIM
MILIMETERS
INCHES
1.70
0.067
0.20
0.01
INCHES
0.65
0.03
DIM
MILIMETERS
11/11
2012.06 - Rev.B
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