ROHM RTF016N05 Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

RTF016N05

Nch 45V 1.6A Power MOSFET

lOutline

V

DSS

45V

R

DS(on)

(Max.)

190mW

I

D

1.6A

P

D

0.8W

lFeatures

lInner circuit

1) Low on - resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TUMT3).

4) Pb-free lead plating ; RoHS compliant

lPackaging specifications

Type

Packaging

Taping

lApplication

Reel size (mm)

180

DC/DC converters

Tape width (mm)

8

Basic ordering unit (pcs)

3,000

Drain - Source voltage

V

DSS

45

V

Taping code

TL

Marking

PU

lAbsolute maximum ratings(Ta = 25°C)

Parameter

Symbol

Value

Unit

Continuous drain current

I

D

*1

1.6

A

Pulsed drain current

I

D,pulse

*2

6.4

A

Power dissipation
Gate - Source voltage

V

GSS

12

V

P

D

*3

0.8

W

P

D

*4

0.32

W

Junction temperature

T

j

150

°C

Range of storage temperature

T

stg

-55 to +150

°C

(1)

(2)

(3)

*1 ESD PROTECTION DIODE
*2 BODY DIODE

(1) Gate

(2) Source
(3) Drain

TUMT3

1/11

2012.06 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

RTF016N05

*1 Limited only by maximum temperature allowed.

*2 Pw  10ms, Duty cycle  1%

*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)

*5 Pulsed

lThermal resistance

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.

Thermal resistance, junction - ambient

R

thJA

*4

--391

°C/W

Thermal resistance, junction - ambient

R

thJA

*3

--156

°C/W

lElectrical characteristics(Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit
Min.

Typ.

Max.

V

Breakdown voltage
temperature coefficient

ΔV

(BR)DSS

ΔT

j

ID = 1mA
referenced to 25°C

-41-

mV/°C

Drain - Source breakdown
voltage

V

(BR)DSS

V

GS

= 0V, ID = 1mA

45--

mA

Gate - Source leakage current

I

GSS

V

GS

= 12V, V

DS

= 0V

-

-

10

mA

Zero gate voltage drain current

I

DSS

V

DS

= 45V, V

GS

= 0V

--1

V

Gate threshold voltage
temperature coefficient

ΔV

(GS)th

ΔT

j

ID = 1mA
referenced to 25°C

-

-2.5

-

mV/°C

Gate threshold voltage

V

GS (th)

V

DS

= 10V, ID = 1mA

0.5-1.5-140

190-230

320

f = 1MHz, open drain

Static drain - source
on - state resistance

R

DS(on)

*5

mW

Gate input resistannce

R

G

W

S-10

-

Transconductance

gfs

*5

V

DS

= 10V, ID = 1.6A

1.5

3.5

-

VGS=4.0V, ID=1.6A

-

150

210

VGS=2.5V, ID=1.6A

-

200

280

VGS=4.5V, ID=1.6A, Tj=125°C

VGS=4.5V, ID=1.6A

2/11

2012.06 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

RTF016N05

lElectrical characteristics(Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit
Min.

Typ.

Max.

pF

Output capacitance

C

oss

V

DS

= 10V

-40-

Reverse transfer capacitance

C

rss

f = 1MHz

Input capacitance

C

iss

V

GS

= 0V

-

150--15-

Turn - on delay time

t

d(on)

*5

V

DD

⋍ 25V, V

GS

= 4.5V

-8-

ns

Rise time

t

r

*5

ID = 0.8A

-14-

Turn - off delay time

t

d(off)

*5

RL = 31.3W

-16-

Fall time

t

f

*5

RG = 10W

-10-

lGate Charge characteristics(Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit
Min.

Typ.

Max.-0.8

-

Gate - Drain charge

Q

gd

*5

-

0.5

-

nC

Gate - Source charge

Q

gs

*5

V

DD

⋍ 25V, ID = 1.6A

VGS = 4.5V

Total gate charge

Q

g

*5

V

DD

⋍ 25V, ID = 1.6A

VGS = 4.5V

-

2.3

-

lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit
Min.

Typ.

Max.

A

Forward voltage

V

SD

*5

V

GS

= 0V, Is = 1.6A

--1.2

V

Inverse diode continuous,
forward current

IS

*1

Ta = 25°C

--0.6

3/11

2012.06 - Rev.B

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

RTF016N05

lElectrical characteristic curves

0.1

1

10

100

1000

0.0001 0.01 1 100

T

a

=25ºC

Single Pulse

0.001

0.01

0.1

1

10

0.0001 0.01 1 100

T

a

=25ºC

Single Pulse

Rth(ch

-a)=156ºC/W

Rth(ch

-a)(t)=r(t)×Rth(ch-a)

Mounted on ceramic board
(30mm × 30mm × 0.8mm)

top D=1

D=0.5
D=0.1

D=0.05
D=0.01
bottom Signle

Fig.1 Power Dissipation Derating Curve

Power Dissipation : P

D

/P

D

max. [%]

Junction Temperature : Tj [°C]

Fig.2 Maximum Safe Operating Area

Drain Current : I

D

[A]

Drain - Source Voltage : VDS [V]

Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width

Normalized Transient Thermal Resistance : r

(t)

Pulse Width : PW [s]

Fig.4 Single Pulse Maxmum Power dissipation

Peak Transient Power : P(W)

Pulse Width : PW [s]

0

20

40

60

80

100

120

0 50 100 150 200

0.01

0.1

1

10

0.1 1 10 100

Operation in this area

is limited by RDS(on)

( VGS = 4.5V )

PW = 100μs

PW = 1ms

PW = 10ms

DC Operation

T

a

=25ºC

Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)

4/11

2012.06 - Rev.B