C
2.5V Drive Nch MOSFET
RTF015N03
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TUMT3).
3) Low voltage drive (2.5V drive).
zApplications
Switching
zPackaging specifications zInner circuit
TUMT3
(1) Gate
(2) Source
(3) Drain
2.0
0.3
(3)
1.7 0.20.2
(1)
(2)
0.65 0.65
1.3
Abbreviated symbol : PP
0.85Max.
2.1
0.77
0.2Max.
0~0.1
0.17
Type
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
RTF015N03
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
zThermal resistance
Parameter
hannel to ambient
∗ Mounted on a ceramic board
Symbol Limits Unit
(3)
(1)
∗1
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
(2)
(1) Gate
(2) Source
(3) Drain
Limits Unit
DSS
GSS
D
DP
S
SP
D
∗1
∗1
∗2
30
12
±1.5
±6.0
0.6
6.0
0.8
150
−55 to +150
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
∗
156
°C/WRth(ch-a)
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1/3
2009.03 - Rev.A
RTF015N03
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
I
GSS
I
DSS
GS (th)
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
Q
gs
Q
gd
V
SD
∗
∗
∗
∗
∗
∗
∗
g
∗
∗
Min.−Typ. Max.
Unit
Conditions
− 10 µAVGS=12V, VDS=0V
30 −−VID= 1mA, VGS=0V
−−1 µAV
0.5 − 1.5 V V
− 170 240 I
mΩ
− 180 250 mΩ
− 240 340 I
mΩ
1.5 −−SV
− 80 − pF V
− 1412− pF V
−
−
−
−
−
−
−
−−nC
Min. Typ. Max.
− pF f=1MHz
7
− ns
9
− ns
15
− ns
6
− ns
1.6
2.2 nC
0.5
− nC
0.3
Unit
= 30V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 1.5A, VGS= 4.5V
D
I
= 1.5A, VGS= 4V
D
= 1.5A, VGS= 2.5V
D
= 10V, ID= 1.5A
DS
= 10V
DS
=0V
GS
VDD 15V
ID= 0.75A
GS
= 4.5V
V
L
=20Ω
R
G
=10Ω
R
15V
V
GS
V
DD
I
= 1.5A
D
L
=10Ω RG=10Ω
R
Conditions
−−1.2 V IS= 0.6A, VGS=0VForward voltage
= 4.5V
Data Sheet
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2/3
2009.03 - Rev.A
RTF015N03
zElectrical characteristics curves
1000
100
td(off)
Ta=25°C
DD
=15V
V
V
GS
=4.5V
R
G
=10Ω
tf
Pulsed
(V)
GS
6
5
4
3
Ta=25°C
DD
=15V
V
I
D
=1.5A
R
G
=10Ω
Pulsed
(A)
D
Data Sheet
10
1
0.1
Ta=125°C
75°C
25°C
−25°C
VDS=10V
Pulsed
10
td(on)
SWITCHING TIME : t (ns)
1
0.01
tr
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.1 Switching Characteristics
1.0
0.9
(mΩ)
0.8
DS
0.7
0.6
0.5
0.4
0.3
0.2
0.1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.0
0
12 103456789
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Static Drain-Source
On-State Resistance vs.
Gate source Voltage
10
(Ω)
DS (on)
Ta=25°C
Pulsed
VGS=4.0V
Pulsed
2
1
GATE-SOURCE VOLTAGE : V
0
0 0.5
1 1.5 2
TOTAL GATE CHARGE : Qg (nC)
Fig.2 Dynamic Input Characteristics
10
(A)
S
0.1
Ta=125°C
1
75°C
25°C
−25°C
SOURCE CURRENT : I
0.01
0.0
0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.5 Source Current vs.
Source-Drain Voltage
10
(Ω)
DS (on)
VGS=0V
Pulsed
VGS=2.5V
Pulsed
0.01
DRAIN CURRENT : I
0.001
0.0
0.5 1.0 2.01.5 2.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.3 Typical Transfer Characteristics
10
(Ω)
DS (on)
Ta=125°C
1
75°C
25°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
0.01
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.6 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
10
(Ω)
DS (on)
Ta=25°C
Pulsed
VGS=4.5V
Pulsed
Ta=125°C
1
75°C
25°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
0.01
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
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2009 ROHM Co., Ltd. All rights reserved.
Ta=125°C
1
75°C
25°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
0.01
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
3/3
1
VGS=2.5V
VGS=4V
VGS=4.5V
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
0.01
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
2009.03 - Rev.A
Appendix
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The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you
wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM
upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account
when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should
you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no re-
sponsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples
of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to
use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no re-
sponsibility whatsoever for any dispute arising from the use of such technical information.
The Products specified in this document are intended to be used with general-use electronic equipment
or devices (such as audio visual equipment, office-automation equipment, communication devices, elec-
tronic appliances and amusement devices).
The Products are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or
malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the
possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as
derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your
use of any Product outside of the prescribed scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or system
which requires an extremely high level of reliability the failure or malfunction of which may result in a direct
threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment,
aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear
no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intend-
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Notes
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More detail product informations and catalogs are available, please contact your nearest sales office.
ROHM Customer Support System
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Appendix-Rev4.1
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