2.5V Drive Nch MOSFET
RTF015N03
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TUMT3).
3) Low voltage drive (2.5V drive).
zApplications
Switching
zPackaging specifications zInner circuit
TUMT3
(1) Gate
(2) Source
(3) Drain
2.0
0.3
(3)
1.7 0.20.2
(1)
(2)
0.65 0.65
1.3
Abbreviated symbol : PP
0.85Max.
2.1
0.77
0.2Max.
0~0.1
0.17
Type
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
RTF015N03
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
zThermal resistance
Parameter
hannel to ambient
∗ Mounted on a ceramic board
Symbol Limits Unit
(3)
(1)
∗1
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
(2)
(1) Gate
(2) Source
(3) Drain
Limits Unit
DSS
GSS
D
DP
S
SP
D
∗1
∗1
∗2
30
12
±1.5
±6.0
0.6
6.0
0.8
150
−55 to +150
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
∗
156
°C/WRth(ch-a)
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○
2009 ROHM Co., Ltd. All rights reserved.
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2009.03 - Rev.A
RTF015N03
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
I
GSS
I
DSS
GS (th)
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
Q
gs
Q
gd
V
SD
∗
∗
∗
∗
∗
∗
∗
g
∗
∗
Min.−Typ. Max.
Unit
Conditions
− 10 µAVGS=12V, VDS=0V
30 −−VID= 1mA, VGS=0V
−−1 µAV
0.5 − 1.5 V V
− 170 240 I
mΩ
− 180 250 mΩ
− 240 340 I
mΩ
1.5 −−SV
− 80 − pF V
− 1412− pF V
−
−
−
−
−
−
−
−−nC
Min. Typ. Max.
− pF f=1MHz
7
− ns
9
− ns
15
− ns
6
− ns
1.6
2.2 nC
0.5
− nC
0.3
Unit
= 30V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 1.5A, VGS= 4.5V
D
I
= 1.5A, VGS= 4V
D
= 1.5A, VGS= 2.5V
D
= 10V, ID= 1.5A
DS
= 10V
DS
=0V
GS
VDD 15V
ID= 0.75A
GS
= 4.5V
V
L
=20Ω
R
G
=10Ω
R
15V
V
GS
V
DD
I
= 1.5A
D
L
=10Ω RG=10Ω
R
Conditions
−−1.2 V IS= 0.6A, VGS=0VForward voltage
= 4.5V
Data Sheet
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2/3
2009.03 - Rev.A