ROHM RTF015N03 Technical data

C

2.5V Drive Nch MOSFET

RTF015N03

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low On-resistance.

2) Space saving, small surface mount package (TUMT3).

3) Low voltage drive (2.5V drive).

zApplications

Switching

zPackaging specifications zInner circuit

TUMT3

(1) Gate
(2) Source
(3) Drain

2.0

0.3

(3)

1.7 0.20.2

(1)

(2)

0.65 0.65

1.3

Abbreviated symbol : PP

0.85Max.

2.1

0.77

0.2Max.

0~0.1

0.17

Type

Package
Code
Basic ordering unit (pieces)

Taping

TL

3000

RTF015N03

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

zThermal resistance

Parameter

hannel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

(3)

(1)

∗1

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗2

(2)

(1) Gate
(2) Source
(3) Drain

Limits Unit

DSS
GSS

D

DP

S

SP

D

∗1

∗1
∗2

30
12

±1.5
±6.0

0.6

6.0

0.8

150

−55 to +150

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

∗

156

°C/WRth(ch-a)

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2009 ROHM Co., Ltd. All rights reserved.

1/3

2009.03 - Rev.A

RTF015N03

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

Min.−Typ. Max.

Unit

Conditions

− 10 µAVGS=12V, VDS=0V

30 −−VID= 1mA, VGS=0V

−−1 µAV

0.5 − 1.5 V V

− 170 240 I

mΩ

− 180 250 mΩ

− 240 340 I

mΩ

1.5 −−SV

− 80 − pF V

− 1412− pF V

−

−

−

−

−

−

−

−−nC

Min. Typ. Max.

− pF f=1MHz

7

− ns

9

− ns

15

− ns

6

− ns

1.6

2.2 nC

0.5

− nC

0.3

Unit

= 30V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 1.5A, VGS= 4.5V

D

I

= 1.5A, VGS= 4V

D

= 1.5A, VGS= 2.5V

D

= 10V, ID= 1.5A

DS

= 10V

DS

=0V

GS

VDD 15V

ID= 0.75A

GS

= 4.5V

V

L

=20Ω

R

G

=10Ω

R

15V

V

GS

V

DD

I

= 1.5A

D

L

=10Ω RG=10Ω

R

Conditions

−−1.2 V IS= 0.6A, VGS=0VForward voltage

= 4.5V

Data Sheet

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c

○

2009 ROHM Co., Ltd. All rights reserved.

2/3

2009.03 - Rev.A