Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
RT1E060XN
Nch 30V 6A Power MOSFET
Range of storage temperature
T
stg
-55 to +150
°C
P
D
*4
0.65
W
Power dissipation
Junction temperature
T
j
150
°C
Gate - Source voltage
V
GSS
20VP
D
*3
1.25
W
Continuous drain current
I
D
*1
6
A
Pulsed drain current
I
D,pulse
*2
24
A
Drain - Source voltage
V
DSS
30
V
Taping code
TR
Marking
XR
l
Absolute maximum ratings(Ta = 25C)
Parameter
Symbol
Value
Unit
l
Packaging specifications
Type
Packaging
Taping
l
Application
Reel size (mm)
180
DC/DC converters
Tape width (mm)
8
Basic ordering unit (pcs)
3,000
l
Features
l
Inner circuit
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSST8).
4) Pb-free lead plating ; RoHS compliant
l
Outline
V
DSS
30V
R
DS(on)
(Max.)
22mW
I
D
6A
P
D
1.25W
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
TSST8
(1) Drain
(2) Drain
(3) Drain
(4) Gate
*1 ESD PROTECTION DIODE
*2 BODY DIODE
(5) Source
(6) Drain
(7) Drain
(8) Drain
1/11
2012.06 - Rev.C
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Data Sheet
RT1E060XN
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4(20×20×0.8mm)
*5 Pulsed
W
Transconductance
gfs
*5
V
DS
= 10V, ID = 6A
4.5
8.0-S
Gate input resistannce
R
G
f = 1MHz, open drain
-3-
mW
VGS=4.5V, ID=6A
-2129
VGS=4.0V, ID=6A
-2332
VGS=10V, ID=6A, Tj=125°C
Static drain - source
on - state resistance
R
DS(on)
*5
VGS=10V, ID=6A
-1622-2434V
Gate threshold voltage
temperature coefficient
ΔV
(GS)th
ΔT
j
ID = 1mA
referenced to 25°C
-
-3.3
-
mV/°C
Gate threshold voltage
V
GS (th)
V
DS
= 10V, ID = 1mA
1.0-2.5
mA
Gate - Source leakage current
I
GSS
V
GS
= 20V, V
DS
= 0V
-
-
10
mA
Zero gate voltage drain current
I
DSS
V
DS
= 30V, V
GS
= 0V
--1
V
Breakdown voltage
temperature coefficient
ΔV
(BR)DSS
ΔT
j
ID = 1mA
referenced to 25°C
-35-
mV/°C
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, ID = 1mA
30--
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
lThermal resistance
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - ambient
R
thJA
*4
--192
°C/W
Thermal resistance, junction - ambient
R
thJA
*3
--100
°C/W
2/11
2012.06 - Rev.C
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Data Sheet
RT1E060XN
A
Forward voltage
V
SD
*5
V
GS
= 0V, Is = 6A
--1.2
V
Inverse diode continuous,
forward current
IS
*1
Ta = 25°C
--1
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.-1.6
-
Gate - Drain charge
Q
gd
*5
-
2.6
-
nC
V
DD
⋍ 15V, ID = 6A
VGS = 10V
-13-
Gate - Source charge
Q
gs
*5
V
DD
⋍ 15V, ID = 6A
VGS = 5V
V
DD
⋍ 15V, ID = 6A
VGS = 5V
-
6.8
-
Total gate charge
Q
g
*5
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
ns
Rise time
t
r
*5
ID = 3A
-16-
Turn - off delay time
t
d(off)
*5
RL = 5W
-32-
Fall time
t
f
*5
RG = 10W
-8-
440--85-
Turn - on delay time
t
d(on)
*5
V
DD
⋍ 15V, V
GS
= 10V
-8-
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
pF
Output capacitance
C
oss
V
DS
= 10V
-
170
-
Reverse transfer capacitance
C
rss
f = 1MHz
Input capacitance
C
iss
V
GS
= 0V
-
3/11
2012.06 - Rev.C
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Data Sheet
RT1E060XN
lElectrical characteristic curves
0.1
1
10
100
1000
0.0001 0.01 1 100
T
a
= 25ºC
Single Pulse
0.001
0.01
0.1
1
10
0.0001 0.01 1 100
T
a
=25ºC
Single Pulse
Rth(ch
-a)=100ºC/W
Rth(ch
-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
top D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
0.01
0.1
1
10
100
0.1 1 10 100
PW = 100μs
DC
Operation
T
a
=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Operation in this area
is limited by RDS(on)
（ VGS = 10V ）
PW = 1ms
PW = 10ms
0
20
40
60
80
100
120
0 50 100 150 200
Fig.1 Power Dissipation Derating Curve
Power Dissipation : P
D
/P
D
max. [%]
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
Drain Current : I
D
[A]
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r
(t)
Pulse Width : PW [s]
Fig.4 Single Pulse Maxmum Power dissipation
Peak Transient Power : P(W)
Pulse Width : PW [s]
4/11
2012.06 - Rev.C
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Data Sheet
RT1E060XN
lElectrical characteristic curves
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1
VGS=2.5V
VGS=10.0V
VGS=4.0V
VGS=4.5V
VGS=2.8V
VGS=3.0V
Ta= 25ºC
0
1
2
3
4
5
6
0 2 4 6 8 10
VGS=2.5V
VGS=2.8V
Ta= 25ºC
VGS=10.0V
VGS=4.0V
VGS=4.5V
VGS=3.0V
Fig.5 Typical Output Characteristics(I)
Drain Current : I
D
[A]
Drain - Source Voltage : VDS [V]
Fig.6 Typical Output Characteristics(II)
Drain Current : I
D
[A]
Drain - Source Voltage : VDS [V]
5/11
2012.06 - Rev.C
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RT1E060XN
lElectrical characteristic curves
0.001
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
DS
= 10V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.01
0.1
1
10
100
0.001 0.1 10
V
DS
= 10V
Ta = -25ºC
Ta = 25ºC
Ta = 75ºC
T
a
= 125ºC
0
20
40
60
-50 0 50 100 150
V
GS
=0V
ID=1mA
0
1
2
3
-50 0 50 100 150
VDS=10V
ID=1mA
Fig.7 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : V
(BR)DSS
[V]
Junction Temperature : Tj [°C]
Fig.8 Typical Transfer Characteristics
Drain Current : I
D
[A]
Gate - Source Voltage : VGS [V]
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : V
GS(th)
[V]
Junction Temperature : Tj [°C]
Fig.10 Transconductance vs. Drain Current
Transconductance : g
fs
[S]
Drain Current : ID [A]
6/11
2012.06 - Rev.C
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Data Sheet
RT1E060XN
lElectrical characteristic curves
0
0.2
0.4
0.6
0.8
1
1.2
-25 0 25 50 75 100 125 150
0
10
20
30
-50 -25 0 25 50 75 100 125 150
V
GS
=10V
ID=6.0A
1
10
100
0.01 0.1 1 10 100
Ta= 25ºC
VGS= 4.0V
VGS= 4.5V
VGS= 10V
0
20
40
60
80
100
0 2 4 6 8 10
ID=6.0A
ID=3.0A
Ta= 25ºC
Fig.11 Drain CurrentDerating Curve
Drain Current Dissipation
: I
D
/I
D
max. (%)
Junction Temperature : Tj [ºC]
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : ID [A]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Gate - Source Voltage : VGS [V]
7/11
2012.06 - Rev.C
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RT1E060XN
lElectrical characteristic curves
1
10
100
0.01 0.1 1 10 100
V
GS
= 10V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
1
10
100
0.01 0.1 1 10 100
VGS= 4V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
1
10
100
0.01 0.1 1 10 100
VGS= 4.5V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : ID [A]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : ID [A]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : ID [A]
8/11
2012.06 - Rev.C
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RT1E060XN
lElectrical characteristic curves
0
2
4
6
8
10
0 2 4 6 8 10 12 14
Ta = 25ºC
VDD= 15V
ID=6A
10
100
1000
10000
0.01 0.1 1 10 100
Ta = 25ºC
f=1MHz
VGS=0V
C
iss
C
oss
C
rss
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : VDS [V]
Fig.20 Dynamic Input Characteristics
Gate - Source Voltage : V
GS
[V]
Total Gate Charge : Qg [nC]
Fig.19 Switching Characteristics
Switching Time : t [ns]
Drain Current : ID [A]
1
10
100
1000
0.01 0.1 1 10 100
VDD≒15V
V
GS
=10V
R
G
=10W
Ta=25ºC
t
d(on)
t
r
t
d(off)
t
f
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5
VGS=0V
Ta=125ºC
T
a
=75ºC
T
a
=25ºC
T
a
= -25ºC
Fig.21 Source Current
vs Source Drain Voltage
Source Current : I
S
[A]
Source-Drain Voltage : VSD [V]
9/11
2012.06 - Rev.C
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Data Sheet
RT1E060XN
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
10/11
2012.06 - Rev.C
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Data Sheet
RT1E060XN
lDimensions (Unit : mm)
Dimension in mm/inches
TSST8
Patterm of terminal position areas
L1
EL
H
E
D
A
e
b
x S A
y
S
S
A1
A
c
Lp1
Lp
e1
ｌ1
b3
l2
e
MIN MAX MIN MAX
A 0.75 0.85 0.03 0.033
A1 0.00 0.05 0 0.002
b 0.22 0.42 0.009 0.017
c 0.12 0.22 0.005 0.009
D 2.90 3.10 0.114 0.122
E 1.50 1.70 0.059 0.067
e
HE 1.80 2.00 0.071 0.079
L 0.05 0.25 0.002 0.01
L1 0.05 0.25 0.002 0.01
Lp 0.15 0.34 0.006 0.013
Lp1 0.15 0.34 0.006 0.013
x - 0.10 - 0.004
y - 0.10 - 0.004
MIN MAX MIN MAX
e1
b3 - 0.52 - 0.02
l1 - 0.44 - 0.017
l2 - 0.44 - 0.017
DIM
MILIMETERS
INCHES
1.46
0.06
DIM
MILIMETERS
INCHES
0.65
0.03
11/11
2012.06 - Rev.C
Notes
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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While ROHM always makes effor ts to enhance the quality and reliability of its Products, a
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Please be sure to implement in your equipment using the Products safety measures to guard
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