ROHM RT1E050RP Technical data

4V Drive Pch MOSFET

(1)

4)

(

(5)(6)(7)

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RT1E050RP

 Structure  Dimensions (Unit : mm)

Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) High power package.

3) 4V drive.

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TR
Basic ordering unit (pieces) 3000

RT1E050RP ○

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

D

30 V

20 V

5A

*1

20 A

1A

*1

20 A

*2

1.25 W

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

TSST8

(1) Drain
(2) Drain
(3) Drain
(4) Gate
(5) Source
(6) Drain
(7) Drain
(8) Drain

(8) (7) (6) (5)

(1) (2) (3) (4)

Abbreviated symbol :UD

8)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗2

∗1

(

(3)(2)

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a) 100 C / W

*Mounted on a ceramic board.

Symbol Limits Unit

*

1/5

2010.04 - Rev.A

RT1E050RP

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1 AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-2636 I

*

-3650 I

-4056 I

*

l 3.1 - - S ID=5A, VDS=10V

- 1300 - pF VDS=10V

- 180 - pF VGS=0V

- 160 - pF f=1MHz

*

- 10 - ns ID=2.5A, VDD 15V

*

- 15 - ns VGS=10V

*

- 90 - ns RL=6.0

*

- 50 - ns RG=10

*

- 13 - nC ID=5A, VDD 15V

*

- 3.5 - nC VGS=5V RL=3

- 4.5 - nC RG=10

*

=5A, VGS=10V

D

m

=2.5A, VGS=4.5V

D

=2.5A, VGS=4.0V

D

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

--1.2 V Is=5A, VGS=0V

Conditions

2/5

2010.04- Rev.A

RT1E050RP

STATIC

DRAIN

SOURCE

ON

STATE

E

STATIC

DRAIN

SOURCE

ON

STATE

SOURCE

CURRENT

I

s

[A]

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

 Electrical characteristics curves

5

4

[A]

D

3

2

1

DRAIN CURRENT : -I

0

0 0.2 0.4 0.6 0.8 1

1000

(on)[mΩ ]

100

DS

10

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

VGS= -3.0V

VGS= -10V

VGS= -4.5V

V

DRAIN-SOURCE VOLTAGE : -VDS[V]

Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics

Ta=25°C
Pulsed

DRAIN-CURRENT : -ID[A]

= -4.0V

Ta=25°C
Pulsed

VGS= -2.8V

VGS= -2.5V

VGS= -4.0V

VGS= -4.5V

VGS= -10V

5

VGS= -3.0V

4

[A]

D

3

2

DRAIN CURRENT : -I

1

0

0246810

DRAIN-SOURCE VOLTAGE : -VDS[V]

1000

VGS= -10V

Pulsed

-

(on)[mΩ ]

100

DS

-

10

RESISTANCE : R

1

0.1 1 10

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

VGS= -2.8V

VGS= -10V

VGS= -4.5V

VGS= -4.0V

VGS= -2.5V

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

DRAIN-CURRENT : -ID[A]

Ta=25°C
Pulsed

10

VDS= -10V

Pulsed

[A]

1

Ta= 125°C

D

Ta= 75°C
Ta= 25°C

Ta= - 25°C

0.1

0.01

DRAIN CURRENT : -I

0.001

0123

GATE-SOURCE VOLTAGE : -VGS[V]

1000

(on)[mΩ]

VGS= -4.5V

Pulsed

100

DS

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

10

RESISTANCE : R

1

STATIC DRAIN-SOURCE ON-STAT

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)

1000

VGS= -4.0V

-

-

Pulsed

(on)[mΩ ]

100

DS

10

RESISTANCE : R

1

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)

Ta=125°C

Ta=75°C
Ta=25°C

Ta= -25°C

10

VDS= -10V

Pulsed

1

0.1

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.8 Forward Transfer Admittance
vs. Drain Current

Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C

3/5

10

VGS=0V

Pulsed

: -

1

0.1

0.01

0 0.5 1 1.5

SOURCE-DRAIN VOLTAGE : -VSD [V]

Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

2010.04 - Rev.A

RT1E050RP

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

200

180

160

140

(ON)[mΩ ]

DS

120

100

80

60

40

RESISTANCE : R

20

STATIC DRAIN-SOURCE ON-STATE

0

0 5 10 15

GATE-SOURCE VOLTAGE : -VGS[V]

Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

10000

1000

Crss

100

CAPACITANCE : C [pF]

10

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : -VDS[V]

ID= -2.5A

Coss

Fig.13 Typical Capacitance
vs. Drain-Source Voltage

ID= -5.0A

Ta=25°C
Pulsed

Ciss

Ta=25°C
f=1MHz
VGS=0V

10000

t

1000

100

10

SWITCHING TIME : t [ns]

1

0.01 0.1 1 10

f

t

d(off)

t

d(on)

DRAIN-CURRENT : -ID[A]

Fig.11 Switching Characteristics

t

r

Ta=25°C
VDD= -15V

VGS= -10V

RG=10Ω

Pulsed

10

[V]

GS

8

6

4

2

0

GATE-SOURCE VOLTAGE : -V

0 4 8 12 16 20 24 28

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

Ta=25°C
VDD= -15V

ID= -5.0A

RG=10Ω

Pulsed

4/5

2010.04 - Rev.A

RT1E050RP

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

 Measurement circuits

V

GS

R

G

Fig.1-1 Switching Time Measurement Circuit

V

GS

I

G(Const.)

R

G

Fig.2-1 Gate Charge Measurement Circuit

I

D.U.T.

D.U.T.

D

D

I

V

DS

R

L

V

DD

V

R

L

V

DD

Pulse Width

V

GS

10%

50%

90%

50%

10% 10%

V

DS

90% 90%

t

d(on)

t

r

t

on

t

d(off)

t

f

t

off

Fig.1-2 Switching Waveforms

V

G

DS

V

GS

QgsQ

Q

g

gd

Charge

Fig.2-2 Gate Charge Waveform

5/5

2010.04- Rev.A

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R1010

A