ROHM RT1E050RP Technical data

4V Drive Pch MOSFET

(1)

4)

(

(5)(6)(7)

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RT1E050RP

 Structure  Dimensions (Unit : mm)

Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) High power package.

3) 4V drive.

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TR
Basic ordering unit (pieces) 3000

RT1E050RP ○

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

D

30 V

20 V

5A

*1

20 A

1A

*1

20 A

*2

1.25 W

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

TSST8

(1) Drain
(2) Drain
(3) Drain
(4) Gate
(5) Source
(6) Drain
(7) Drain
(8) Drain

(8) (7) (6) (5)

(1) (2) (3) (4)

Abbreviated symbol :UD

8)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗2

∗1

(

(3)(2)

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a) 100 C / W

*Mounted on a ceramic board.

Symbol Limits Unit

*

1/5

2010.04 - Rev.A

RT1E050RP

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1 AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-2636 I

*

-3650 I

-4056 I

*

l 3.1 - - S ID=5A, VDS=10V

- 1300 - pF VDS=10V

- 180 - pF VGS=0V

- 160 - pF f=1MHz

*

- 10 - ns ID=2.5A, VDD 15V

*

- 15 - ns VGS=10V

*

- 90 - ns RL=6.0

*

- 50 - ns RG=10

*

- 13 - nC ID=5A, VDD 15V

*

- 3.5 - nC VGS=5V RL=3

- 4.5 - nC RG=10

*

=5A, VGS=10V

D

m

=2.5A, VGS=4.5V

D

=2.5A, VGS=4.0V

D

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

--1.2 V Is=5A, VGS=0V

Conditions

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2010.04- Rev.A