ROHM RT1E040RP Technical data

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©2010 ROHM Co., Ltd. All rights reserved.

4V Drive Pch MOSFET



(1)

4)

(

(5)(6)(7)

RT1E040RP

 Structure  Dimensions (Unit : mm)

Silicon P-channel MOSFET

Features

1) Low On-resistance.

2) High power package.

3) 4V drive.

 Application

Switching

 Packaging specifications

Package Taping

Type

Code TR
Basic ordering unit (pieces) 3000

RT1E040RP ○

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

D

*1

*1

*2

30 V

 20 V

 4A

 16 A

1A

16 A

1.25 W

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

TSST8

Abbreviated symbol : UG

 Inner curcuit

(1) Drain
(2) Drain
(3) Drain
(4) Gate
(5) Source
(6) Drain
(7) Drain
(8) Drain

(8) (7) (6) (5)

(1) (2) (3) (4)

8)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗2

∗1

(

(3)(2)

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a) 100  C / W

*Mounted on a ceramic board.

Symbol Limits Unit

*

1/5

2010.06 - Rev.A

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

RT1E040RP

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1 AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-3245 I

Static drain-source on-state
resistance

R

DS (on)

*

-4563 I

m

-5272 I

*

iss

oss

rss

d(on)

d(off)

gd

*

- 1000 - pF VDS=10V

- 150 - pF VGS=0V

- 130 - pF f=1MHz

- 15 - ns ID=2A, VDD 15V

*

*

- 30 - ns VGS=10V

*

*

r

- 85 - ns RL=7.5

*

*

*

*

f

g

gs

- 45 - ns RG=10

*

*

- 10.5 - nC ID=4A, VDD 15V

*

*

- 3.0 - nC VGS=5V RL=3.8

- 3.3 - nC RG=10

*

*

Forward transfer admittance l Yfs l 2.7 - - S ID=4A, VDS=10V

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Conditions

=4A, VGS=10V

D

=2A, VGS=4.5V

D

=2A, VGS=4.0V

D

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

--1.2 V Is=4A, VGS=0V

Conditions

2/5

2010.06 - Rev.A