Datasheet
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RT1C060UN
Nch 20V 6A Power MOSFET
Junction temperature
T
j
150
°C
Range of storage temperature
T
stg
-55 to +150
°C
Power dissipation
Gate - Source voltage
V
GSS
10
V
P
D
*3
1.25
W
P
D
*4
0.65
W
Continuous drain current
I
D
*1
6
A
Pulsed drain current
I
D,pulse
*2
24
A
Drain - Source voltage
V
DSS
20
V
Taping code
TR
Marking
VB
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
lPackaging specifications
Type
Packaging
Taping
lApplication
Reel size (mm)
180
DC/DC converters
Tape width (mm)
8
Basic ordering unit (pcs)
3,000
lFeatures
lInner circuit
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSST8).
4) Pb-free lead plating ; RoHS compliant
lOutline
V
DSS
20V
R
DS(on)
(Max.)
28mW
I
D
6A
P
D
1.25W
(1)
(4)(3)(2)
(8)
(5)(6)(7)
(1)
(2)
(3)
(4)
(5)
(6)
*1 ESD PROTECTION DIODE
*2 BODY DIODE
(1) Drain
(2) Drain
(3) Drain
(4) Gate
TSST8
(7)
(8)
(5) Source
(6) Drain
(7) Drain
(8) Drain
1/11
2012.06 - Rev.B
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Data Sheet
RT1C060UN
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4(20×20×0.8mm)
*5 Pulsed
W
Transconductance
gfs
*5
V
DS
= 10V, ID = 6A
5.513-S-3752
Gate input resistannce
R
G
f = 1MHz, open drain
-
2.0
-
mW
VGS=2.5V, ID=6A
-2433
VGS=1.8V, ID=3A
-2839
VGS=1.5V, ID=1.2A
Static drain - source
on - state resistance
R
DS(on)
*5
VGS=4.5V, ID=6A
-2028-33
66
VGS=10V, ID=6A, Tj=125°C
V
Gate threshold voltage
temperature coefficient
ΔV
(GS)th
ΔT
j
ID = 1mA
referenced to 25°C
-
-1.9
-
mV/°C
Gate threshold voltage
V
GS (th)
V
DS
= 10V, ID = 1mA
0.3-1.0
mA
Gate - Source leakage current
I
GSS
V
GS
= 10V, V
DS
= 0V
-
-
10
mA
Zero gate voltage drain current
I
DSS
V
DS
= 20V, V
GS
= 0V
--1
V
Breakdown voltage
temperature coefficient
ΔV
(BR)DSS
ΔT
j
ID = 1mA
referenced to 25°C
-20-
mV/°C
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, ID = 1mA
20--
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
lThermal resistance
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - ambient
R
thJA
*4
--192
°C/W
Thermal resistance, junction - ambient
R
thJA
*3
--100
°C/W
2/11
2012.06 - Rev.B
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Data Sheet
RT1C060UN
A
Forward voltage
V
SD
*5
V
GS
= 0V, Is = 6A
--1.2
V
Inverse diode continuous,
forward current
IS
*1
Ta = 25°C
--1
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.-2.0
-
Gate - Drain charge
Q
gd
*5
-
2.1
-
nC
Gate - Source charge
Q
gs
*5
V
DD
⋍ 10V, ID = 6A
VGS = 4.5V
Total gate charge
Q
g
*5
V
DD
⋍ 10V, ID = 6A
VGS = 4.5V
-11-
-
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Turn - on delay time
t
d(on)
*5
V
DD
⋍ 10V, V
GS
= 4.5V
-7-
ns
Rise time
t
r
*5
ID = 3A
-30-
Turn - off delay time
t
d(off)
*5
RL = 3.3W
-75-
Fall time
t
f
*5
RG = 10W
-
20
pF
Output capacitance
C
oss
V
DS
= 10V
-
190
-
Reverse transfer capacitance
C
rss
f = 1MHz
Input capacitance
C
iss
V
GS
= 0V
-
870--85-
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
3/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RT1C060UN
lElectrical characteristic curves
0.1
1
10
100
1000
0.0001 0.01 1 100
T
a
=25ºC
Single Pulse
Fig.1 Power Dissipation Derating Curve
Power Dissipation : P
D
/P
D
max. [%]
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
Drain Current : I
D
[A]
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r
(t)
Pulse Width : Pw [s]
Fig.4 Single Pulse Maxmum Power dissipation
Peak Transient Power : P(W)
Pulse Width : Pw [s]
0
20
40
60
80
100
120
0 50 100 150 200
0.01
0.1
1
10
100
0.1 1 10 100
PW = 100μs
PW = 1ms
PW = 10ms
DC Operation
Operation in this area
is limited by RDS(on)
(VGS = 10V )
T
a
=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0.001
0.01
0.1
1
10
0.0001 0.01 1 100
T
a
=25ºC
Single Pulse
Rth(ch
-a)=100ºC/W
Rth(ch
-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
top D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
4/11
2012.06 - Rev.B
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Data Sheet
RT1C060UN
lElectrical characteristic curves
Drain Current : I
D
[A]
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1
VGS= 1.0V
Ta=25ºC
VGS= 1.1V
VGS= 1.2V
VGS= 1.5V
VGS=2.5V
VGS=1.8V
VGS=10V
VGS=4.5V
Fig.5 Typical Output Characteristics(I)
Drain Current : I
D
[A]
Drain - Source Voltage : VDS [V]
Fig.6 Typical Output Characteristics(II)
Drain - Source Voltage : VDS [V]
0
1
2
3
4
5
6
0 2 4 6 8 10
VGS= 1.0V
Ta=25ºC
VGS= 1.1V
VGS= 1.2V
VGS=10V
VGS=4.5V
VGS=2.5V
VGS=1.8V
VGS=1.5V
5/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RT1C060UN
lElectrical characteristic curves
Fig.7 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : V
(BR)DSS
[V]
Junction Temperature : Tj [°C]
Fig.8 Typical Transfer Characteristics
Gate - Source Voltage : VGS [V]
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : V
GS(th)
[V]
Junction Temperature : Tj [°C]
Fig.10 Transconductance vs. Drain Current
Transconductance : g
fs
[S]
Drain Current : ID [A]
Drain Current : I
D
[A]
0
20
40
60
-50 0 50 100 150
V
GS
=0V
ID=1mA
0
0.2
0.4
0.6
0.8
1
-50 0 50 100 150
VDS=4.5V
ID=1mA
0.1
1
10
100
0.01 0.1 1 10
VDS= 10V
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.001
0.01
0.1
1
10
100
0 0.5 1 1.5
VDS= 10V
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
6/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RT1C060UN
lElectrical characteristic curves
Fig.11 Drain CurrentDerating Curve
Drain Current Dissipation
: I
D
/I
D
max. (%)
Junction Temperature : Tj [ºC]
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : ID [A]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Gate - Source Voltage : VGS [V]
0
0.2
0.4
0.6
0.8
1
1.2
-25 0 25 50 75 100 125 150
0
10
20
30
40
-50 -25 0 25 50 75 100 125 150
V
GS
=10V
I
D
=6.0A
0
50
100
0 5 10
Ta=25ºC
ID= 3A
ID= 6A
1
10
100
1000
0.1 1 10
.
Ta= 25ºC
VGS= 1.5V
VGS= 1.8V
VGS= 2.5V
VGS= 4.5V
7/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RT1C060UN
lElectrical characteristic curves
1
10
100
1000
0.1 1 10
VGS= 4.5V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
1
10
100
1000
0.1 1 10
VGS= 2.5V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
1
10
100
1000
0.1 1 10
VGS= 1.8V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
Fig.15 Static Drain-Source On-State
Resistance vs. Drain Current(II)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : ID [A]
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : ID [A]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : ID [A]
8/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RT1C060UN
lElectrical characteristic curves
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : VDS [V]
Fig.20 Dynamic Input Characteristics
Gate - Source Voltage : V
GS
[V]
Total Gate Charge : Qg [nC]
Fig.19 Switching Characteristics
Switching Time : t [ns]
Drain Current : ID [A]
Fig.21 Source Current
vs. Source Drain Voltage
Source Current : I
S
[A]
Source-Drain Voltage : VSD [V]
10
100
1000
10000
0.01 0.1 1 10 100
Ta=25ºC
f=1MHz
VGS=0V
Ciss
Coss
Crss
1
10
100
1000
10000
0.01 0.1 1 10
tf
td(on)
td(off)
Ta=25ºC
VDD=10V
VGS=4.5V
RG=10W
tr
0
1
2
3
4
5
0 2 4 6 8 10 12 14
Ta=25ºC
VDD=10V
ID= 6A
RG=10W
0.01
0.1
1
10
100
0 0.5 1 1.5
VGS=0V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
9/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RT1C060UN
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
28mW
Fig.2-2 Gate Charge Waveform
10/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RT1C060UN
lDimensions (Unit : mm)
28mW
Dimension in mm/inches
TSST8
Patterm of terminal position areas
L1
EL
H
E
D
A
e
b
x S A
y
S
S
A1
A
c
Lp1
Lp
e1
ｌ1
b3
l2
e
MIN MAX MIN MAX
A 0.75 0.85 0.03 0.033
A1 0.00 0.05 0 0.002
b 0.22 0.42 0.009 0.017
c 0.12 0.22 0.005 0.009
D 2.90 3.10 0.114 0.122
E 1.50 1.70 0.059 0.067
e
HE 1.80 2.00 0.071 0.079
L 0.05 0.25 0.002 0.01
L1 0.05 0.25 0.002 0.01
Lp 0.15 0.34 0.006 0.013
Lp1 0.15 0.34 0.006 0.013
x - 0.10 - 0.004
y - 0.10 - 0.004
MIN MAX MIN MAX
e1
b3 - 0.52 - 0.02
l1 - 0.44 - 0.017
l2 - 0.44 - 0.017
DIM
MILIMETERS
INCHES
1.46
0.06
DIM
MILIMETERS
INCHES
0.65
0.03
11/11
2012.06 - Rev.B
Notes
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which can be obtained from ROHM upon request.
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illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specied herein is intended only to show the typical functions of and
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