ROHM RT1A050ZP Technical data

A

D
G

D
S

(
T

C
R

C

1.5V Drive Pch MOSFET

RT1A050ZP

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET

zFeatures

1) Low on-resistance.

2) High power package.

3) Low voltage drive. (1.5V)

zApplications

Switching

zPackaging specifications zEquivalent circuit

Type

RT1A050ZP

Package
Code
Basic ordering unit(piecies)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
rain-source voltage
ate-source voltage

rain current
ource current

Body diode)

otal power dissipation

hannel temperature
ange of Storage temerature

∗1 Pw 10µs, Duty cycle 1%
∗2 When mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

Limits Unit

−12
±10

∗1

∗1

±5

±20

−1

−20

1.25

zThermal resistance

Parameter
hannel to ambient

∗ When mounted on a ceramic board

Symbol

Rth(ch-a)

Limits Unit

∗

100

TSST8

Abbreviated symbol : YH

(8) (7)

(1) (2)

*1 ESD PROTECTION DIODE
*2 BODY DIODE

VV
VV
AI
AI
AI
AI

∗2

WP

°CTch 150
°CTstg −55 to +150

°C / W

(8) (7) (5)(6)

(1) (2) (4)(3)

(6) (5)

∗2

(3) (4)

Each lead has same dimensions

∗1

(1) Drain
(2) Drain
(3) Drain
(4) Gate
(5) Source
(6) Drain
(7) Drain
(8) Drain

www.rohm.com

c

○

2009 ROHM Co., Ltd. All rights reserved.

1/5

2009.01 - Rev.

A

RT1A050ZP Data Sheet

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gete voltage drain current

V

Static drain-source on-state
resistance

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source -drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

∗

Min.

Typ. Max.

−−±10 µAV

Unit

GS

Conditions

=±10V, VDS=0V

−12 −−VID= −1mA, VGS=0V

−−−1 µAVDS= −12V, VGS=0V

−0.3 −−1.0 V VDS= −6V, ID= −1mAGate threshold voltage

− 19 26 I

− 26 36 mΩ

− 34 50 I

= −5A, VGS= −4.5V

mΩ

D

= −2.5A, VGS= −2.5V

I

D

= −2.5A, VGS= −1.8V

mΩ

D

mΩ− 48 96 ID= −1A, VGS= −1.5V

7 −−SV

= −6V, ID= −5A

DS

− 2800 − pF VDS= −6V

− 340

−

−

−

−

−

−

−

−−nC

Min. Typ. Max.

− pF VGS=0V

310

− pF f=1MHz

− ns

12
95

− ns

− ns

410
220

− ns

34

− nC

− nC

6.0

5.0

Unit

V

DD

−6V

ID= −2.5A
V

GS

= −4.5V

L

2.4Ω

R

G

=10Ω

R
V

−6V

DD

I

= −5A

D

V

= −4.5V

GS

L

R

G

R

Conditions

−−−1.2 V IS= −5A, VGS=0VForward voltage

1.2Ω
=10Ω

www.rohm.com

c

○

2009 ROHM Co., Ltd. All rights reserved.

2/5

2009.01 - Rev.