ROHM RSU002P03 Technical data
RSU002P03
Transistors
4V Drive Pch MOSFET
RSU002P03
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance
2) 4V drive
zApplications
Switching
zPackaging specifications zInner circuit
UMT3
(1) Source
(2) Gate
(3) Drain
2.0
0.3
(3)
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : WP
0.9
0.7
0.2
2.1
1.25
0.15
Each lead has same dimensions
0.1Min.
Type
Package
Code
Basic ordering unit (pieces)
Taping
T106
3000
RSU002P03
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
DSS
GSS
D
DP
D
∗1
∗2
Limits Unit
−30
±20
±0.25
±0.5
0.2
150
−55 to +150
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
VV
VV
AI
AI
WP
°CTch
°CTstg
Symbol Limits Unit
∗
625
°C/WRth(ch-a)
(3)
∗1
∗2
(1)
(1) Source
(2) Gate
(3) Drain
Rev.A 1/4
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
Min.
Typ. Max.
I
GSS
−−±10 µAV
−30 −−VI
I
DSS
GS (th)
−−−1 µAV
−1.0 −−2.5 V V
− 0.9 1.4 I
∗
DS (on)
− 1.4 2.1 Ω
− 1.6 2.4 I
∗
0.2 −−SV
Y
fs
C
C
C
t
d (on)
t
d (off)
− 30 − pF V
iss
− 4
oss
5
−
rss
∗
∗
t
r
∗
∗
t
f
8
−
5
−
30
−
40
−−ns
Min. Typ.
V
SD
−−Forward voltage
Max.
−1.2 V IS= −0.1A, VGS=0V
Unit
=±20V, VDS=0V
GS
= −1mA, VGS=0V
D
= −30V, VGS=0V
DS
= −10V, ID= −1mA
DS
= −0.25A, VGS= −10V
Ω
D
= −0.15A, VGS= −4.5V
I
D
= −0.15A, VGS= −4V
Ω
D
= −10V, ID= −0.15A
DS
= −10V
DS
− pF V
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
V
DD
ID= −0.15A
V
GS
= −10V
R
L
=100Ω
R
G
=10Ω
Unit
RSU002P03
Conditions
−15V
Conditions
Rev.A 2/4
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