Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
RSR030N06
Nch 60V 3A Power MOSFET
Junction temperature
T
j
150
°C
Range of storage temperature
T
stg
-55 to +150
°C
Power dissipation
Gate - Source voltage
V
GSS
20
V
P
D
*3
1.0
W
P
D
*4
0.54
W
Continuous drain current
I
D
*1
3
A
Pulsed drain current
I
D,pulse
*2
12
A
Drain - Source voltage
V
DSS
60
V
Taping code
TL
Marking
PY
l
Absolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
l
Packaging specifications
Type
Packaging
Taping
l
Application
Reel size (mm)
180
DC/DC converters
Tape width (mm)
8
Basic ordering unit (pcs)
3,000
l
Features
l
Inner circuit
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
4) Pb-free lead plating ; RoHS compliant
l
Outline
V
DSS
60V
R
DS(on)
(Max.)
85mW
I
D
3A
P
D
1W
(1)
(2)
(3)
*1 ESD PROTECTION DIODE
*2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
TSMT3
1/11
2012.06 - Rev.B
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Data Sheet
RSR030N06
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4(12×20×0.8mm)
*5 Pulsed
mW
W
Static drain - source
on - state resistance
R
DS(on)
*5
Gate input resistannce
R
G
S-5
-
Transconductance
gfs
*5
V
DS
= 10V, ID = 9A
2.1
5.5
-
VGS=4.5V, ID=3A
-70100
VGS=4.0V, ID=3A
-75105
VGS=10V, ID=3A, Tj=125°C
VGS=10V, ID=3A
-6085-110
154
f = 1MHz, open drain
V
Gate threshold voltage
temperature coefficient
ΔV
(GS)th
ΔT
j
ID = 1mA
referenced to 25°C
-
-4.4
-
mV/°C
Gate threshold voltage
V
GS (th)
V
DS
= 10V, ID = 1mA
1.0-2.5
mA
Gate - Source leakage current
I
GSS
V
GS
= 20V, V
DS
= 0V
-
-
10
mA
Zero gate voltage drain current
I
DSS
V
DS
= 60V, V
GS
= 0V
--1
V
Breakdown voltage
temperature coefficient
ΔV
(BR)DSS
ΔT
j
ID = 1mA
referenced to 25°C
-67-
mV/°C
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, ID = 1mA
60--
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
lThermal resistance
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - ambient
R
thJA
*4
--231
°C/W
Thermal resistance, junction - ambient
R
thJA
*3
--125
°C/W
2/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSR030N06
A
Forward voltage
V
SD
*5
V
GS
= 0V, Is = 3A
--1.2
V
Inverse diode continuous,
forward current
IS
*1
Ta = 25°C
--0.8
Max.-1.6
-
Gate - Drain charge
Q
gd
*5
-
1.4
-
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
nC
V
DD
⋍ 30V, ID = 3A
VGS = 10V
-
9.0
18
Gate - Source charge
Q
gs
*5
V
DD
⋍ 30V, ID = 3A
VGS = 5V
V
DD
⋍ 30V, ID = 3A
VGS = 5V
-
5.0
-
Total gate charge
Q
g
*5
-
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Turn - on delay time
t
d(on)
*5
V
DD
⋍ 30V, V
GS
= 10V
-8-
ns
Rise time
t
r
*5
ID = 1.5A
-12-
Turn - off delay time
t
d(off)
*5
RL = 20W
-30-
Fall time
t
f
*5
RG = 10W
-
10
pF
Output capacitance
C
oss
V
DS
= 10V
-95-
Reverse transfer capacitance
C
rss
f = 1MHz
Input capacitance
C
iss
V
GS
= 0V
-
380--45-
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
3/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSR030N06
lElectrical characteristic curves
0.1
1
10
100
1000
0.0001 0.01 1 100
T
a
=25°C
Single Pulse
Fig.1 Power Dissipation Derating Curve
Power Dissipation : P
D
/P
D
max. [%]
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
Drain Current : I
D
[A]
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r
(t)
Pulse Width : PW [s]
Fig.4 Single Pulse Maxmum Power dissipation
Peak Transient Power : P(W)
Pulse Width : PW [s]
0
20
40
60
80
100
120
0 50 100 150 200
0.01
0.1
1
10
100
0.1 1 10 100
Operation in this area
is limited by RDS(on)
(VGS = 10V )
PW = 100μs
PW = 1ms
PW = 10ms
DC Operation
T
a
=25°C
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0.001
0.01
0.1
1
10
0.0001 0.01 1 100
T
a
=25°C
Single Pulse
Rth(ch
-a)=125°C/W
Rth(ch
-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
top D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signlep
4/11
2012.06 - Rev.B
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Data Sheet
RSR030N06
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Drain Current : I
D
[A]
Drain - Source Voltage : VDS [V]
Fig.6 Typical Output Characteristics(II)
Drain - Source Voltage : VDS [V]
Drain Current : I
D
[A]
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1
VGS= 2.5V
Ta=25°C
Pulsed
VGS= 10V
VGS= 4.5V
VGS= 4.0V
VGS= 2.8V
VGS= 2.2V
0
1
2
3
4
5
6
0 2 4 6 8 10
VGS= 2.5V
Ta=25°C
Pulsed
VGS= 10V
VGS= 4.5V
VGS= 4.0V
VGS= 2.8V
VGS= 2.2V
5/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSR030N06
lElectrical characteristic curves
0
20
40
60
80
100
-50 0 50 100 150
V
DS
=0V
I
D
=1mA
pulsed
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2 2.5 3
VDS= 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0
1
2
3
-50 0 50 100 150
VDS=10V
I
D
=1mA
pulsed
0.1
1
10
0.01 0.1 1 10
VDS= 10V
Pulsed
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
Fig.7 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : V
(BR)DSS
[V]
Junction Temperature : Tj [°C]
Fig.8 Typical Transfer Characteristics
Gate - Source Voltage : VGS [V]
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : V
GS(th)
[V]
Junction Temperature : Tj [°C]
Fig.10 Transconductance vs. Drain Current
Transconductance : g
fs
[S]
Drain Current : ID [A]
Drain Current : I
D
[A]
6/11
2012.06 - Rev.B
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Data Sheet
RSR030N06
lElectrical characteristic curves
Fig.11 Drain CurrentDerating Curve
Drain Current Dissipation
: I
D
/I
D
max. (%)
Junction Temperature : Tj [ºC]
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : ID [A]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance
: R
DS(on)
[mΩ]
Gate - Source Voltage : VGS [V]
0
0.2
0.4
0.6
0.8
1
1.2
-25 0 25 50 75 100 125 150
0
50
100
150
200
250
0 5 10 15 20
Ta=25°C
Pulsed
ID= 1.5A
ID= 3.0A
10
100
1000
0.01 0.1 1 10
VGS= 4.0V
VGS= 4.5V
VGS= 10V
.
Ta= 25°C
Pulsed
0
30
60
90
120
-50 -25 0 25 50 75 100 125 150
V
GS
=10V
I
D
=3A
pulsed
7/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSR030N06
lElectrical characteristic curves
10
100
1000
0.01 0.1 1 10
VGS= 10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Fig.15 Static Drain-Source On-State
Resistance vs. Drain Current(II)
Static Drain - Source On-State Resistance
: R
DS
(on) [mW]
Drain Current : ID [A]
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
Static Drain - Source On-State Resistance
: R
DS
(on) [mW]
Drain Current : ID [A]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Static Drain - Source On-State Resistance
: R
DS
(on) [mW]
Drain Current : ID [A]
10
100
1000
0.01 0.1 1 10
VGS= 4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
100
1000
0.01 0.1 1 10
VGS= 4.0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
8/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSR030N06
lElectrical characteristic curves
1
10
100
1000
0.01 0.1 1 10
tf
td(on)
td(off)
Ta=25°C
VDD= 30V
VGS=10V
RG=10W
Pulsed
tr
10
100
1000
0.01 0.1 1 10 100
Ciss
Coss
Crss
Ta=25°C
f=1MHz
VGS=0V
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : VDS [V]
Fig.20 Dynamic Input Characteristics
Gate - Source Voltage : V
GS
[V]
Total Gate Charge : Qg [nC]
Fig.19 Switching Characteristics
Switching Time : t [ns]
Drain Current : ID [A]
Fig.21 Source Current
vs. Source Drain Voltage
Source Current : I
S
[A]
Source-Drain Voltage : VSD [V]
0
2
4
6
8
10
0 2 4 6 8 10
Ta=25°C
VDD= 30V
ID= 3.0A
RG=10W
Pulsed
0.01
0.1
1
10
0 0.5 1 1.5
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
9/11
2012.06 - Rev.B
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Data Sheet
RSR030N06
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
10/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSR030N06
lDimensions (Unit : mm)
Dimension in mm/inches
TSMT3
Patterm of terminal position areas
D
E
E
Lp
L1
A3
c
A
A1 A2
S
A
b2
l1
Q
e
e1
H
e b
x S A
MIN MAX MIN MAX
A - 1.00 - 0.039
A1 0.00 0.10 0 0.004
A2 0.75 0.95 0.03 0.037
A3
b 0.35 0.50 0.014 0.02
c 0.10 0.26 0.004 0.01
D 2.80 3.00 0.11 0.118
E 1.50 1.80 0.059 0.071
e
HE 2.60 3.00 0.102 0.118
L1 0.30 0.60 0.012 0.024
Lp 0.40 0.70 0.016 0.028
Q 0.05 0.25 0.002 0.01
x - 0.20 - 0.008
MIN MAX MIN MAX
e1
b2 0.70 - 0.028
l1 - 0.90 - 0.035
0.25
0.01
DIM
MILIMETERS
INCHES
2.10
0.08
DIM
MILIMETERS
INCHES
0.95
0.04
11/11
2012.06 - Rev.B
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specied herein is intended only to show the typical functions of and
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