Transistors
4V Drive Nch MOS FET
RSR025N03
zStructure
Silicon N-channel
MOS FET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3) .
zApplication
Power switching, DC / DC converter.
zPackaging specifications
Type
RSR025N03
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤100µs, Duty cycle≤2%
∗2 Mounted on a ceramic board.
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
D
∗1
∗1
∗2
Limits Unit
30
20
±2.5
±10
0.8
3.2
1
zExternal dimensions (Unit : mm)
TSMT3
(1) Gate
(2) Source
(3) Drain
VV
VV
AI
AI
AI
AI
WP
°CTch 150
°CTstg −55 to 150
RSR025N03
2.9
0.4
(3)
(2)
(1)
0.950.95
1.9
Abbreviated symbol : QY
zEquivalent circuit
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
1.0MAX
0.85
0.7
2.8
1.6
0
~
0.1
0.6
~
0.3
0.16
Each lead has same dimensions
(3)
∗1
∗2
(2)
(3)
(1) (2)
(1) Gate
(2) Source
(3) Drain
zThermal resistance
Parameter Symbol Limits Unit
Channel to ambient
∗2 Mounted on a ceramic board.
Rth (ch-a) 125
∗
°C / W
Rev.C 1/3
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
V
V
R
I
GSS
(BR) DSS
I
DSS
GS (th)
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
r
t
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min. Typ. Max.
−−10 µAVGS=20V, VDS=0V
30 −−VI
−−1 µAV
1.0 − 2.5 V V
− 50 70 I
− 74 105 mΩ I
− 83 118 I
1.5 −−SI
− 165 − pF V
− 5535− pF V
−
6
−
10
−
20
−
5
−
2.9
−
−
−−nC I
4.1 nC
0.8
0.9
zBody diode characteristics (Source-Drain) (T a=25°C)
Parameter Symbol
Forward voltage
∗Pulsed
Min. Typ. Max.
∗
V
SD
−−1.2 V IS=3.2A, VGS=0V
Unit
=1mA, VGS=0V
D
=30V, VGS=0V
DS
=10V, ID=1mA
DS
=2.5A, VGS=10V
D
=2.5A, VGS=4.5V
D
=2.5A, VGS=4V
D
=2.5A, VDS=10V
D
=10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC V
=1.25A, VDD 15V
I
D
V
=10V
GS
R
=12.0Ω
L
=10Ω
R
G
15V
V
DD
=5V
GS
=2.5A
D
Unit
Conditions
Conditions
RSR025N03
Rev.C 2/3
Transistors
0
0
6
s
0
s
0
)
.5
0
)
)
0
)
0
zElectrical characteristic curves
1000
(pF)
100
CAPACITANCE : C
10
0.01 0.1 1 10 10
DRAIN-SOURCE VOLTAGE : V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
1
(A)
Ta=125°C
D
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
DRAIN CURRENT : I
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.
GATE-SOURCE VOLTAGE : V
Fig.4
Typical Transfer Characteristic
1000
(mΩ
DS (on)
R
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=25°C
f=1MHz
=0V
V
GS
DS
VDS=10V
Pulsed
GS
VGS=10V
Pulsed
RSR025N03
1000
t
f
(ns)
100
C
iss
C
oss
C
rss
(V)
t
d (off)
10
SWITCHING TIME : t
1
0.01 0.1 1 1
DRAIN CURRENT : I
t
d (on)
Ta=25°C
V
DD
V
GS
R
G
Pulsed
t
r
(A)
D
=15V
=10V
=10Ω
Fig.2 Switching Characteristics
10
Ta=25°C
9
=15V
V
DD
(V)
=2.5A
I
D
GS
8
=10Ω
R
G
Pulsed
7
6
5
4
3
2
1
GATE-SOURCE VOLTAGE : V
0
012345
TOTAL GATE CHARGE : Qg (nC)
Fig.3
Dynamic Input Characteristic
500
(mΩ
400
DS (on)
R
300
200
100
0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
024681
(V)
GATE-SOURCE VOLTAGE : V
ID=2.5A
ID=1.25A
Ta=25°C
Pulsed
GS
(V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10
(A)
s
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
SOURCE CURRENT : I
0.01
0.0 0.5 1.0 1
SOURCE-DRAIN VOLTAGE : V
Fig.6 Source Current vs.
Source-Drain Voltage
VGS=0V
Pulsed
SD
(V)
1000
(mΩ
DS (on)
R
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
VGS=4.5V
Pulsed
1000
(mΩ
DS (on)
R
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
VGS=4V
Pulsed
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
1
0.1 1 1
DRAIN CURRENT : I
Fig.7 Static Drain-Source
On-State Resistance
(A)
D
vs. Drain Current (Ι)
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
1
0.1 1 1
DRAIN CURRENT : I
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
1
0.1 1 1
(A)
D
DRAIN CURRENT : I
(A)
D
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
Rev.C 3/3
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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