ROHM RSR020P03 Schematic [ru]

RSR020P03

Transistors

4V Drive Pch MOSFET

RSR020P03

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET

zFeatures

1) Low On-resistance

2) Space savin g −small surface mount package (TSMT3)

3) 4V drive

zApplications

Switching

zPackaging specifications

Package

Type

RSR020P03

Code
Basic ordering unit (pieces)

zInner circuit

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Total power dissipation

Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

∗1

∗1
∗2

Limits Unit

−30
±20

±2
±8

−0.8

−8

1

150

−55 to +150

zThermal resistance

Parameter
Channel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

∗

125

TSMT3

(1) Gate
(2) Source
(3) Drain

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

°C/WRth(ch-a)

2.9

0.4

(3)

(2)

(1)

0.950.95

1.9

Abbreviated symbol : WZ

(1)

1.0MAX

2.8

1.6

Each lead has same dimensions

∗1

0.16

0.85

(3)

(2)

0.7

0

~

0.1

0.6

~

0.3

∗2

(1) Gate
(2) Source
(3) Drain

Rev.A 1/4

Transistors

zElectrical characteristics (T a=25°C)

Parameter Symbol
Gate-source leakage

Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min.

Typ. Max.

I

GSS

−−±10 µAV

−30 −−VI

I

DSS

GS (th)

−−−1 µAV

−1.0 −−2.5 V V

− 85 120 I

∗

DS (on)

− 135 190 mΩ

− 150 210 I

∗

1.4 −−SV

Y

fs

C

C
C

t

d (on)

t

d (off)

Q

Q

Q

− 370 − pF V

iss

− 8055− pF V

oss

−

rss

∗

∗

t

r

∗

∗

t

f

∗

g

∗

gs

∗

gd

8

−

10

−

35

−

11

−

4.3

−

1.4

−

1.5

−−nC

Min. Typ.

∗

V

SD

−−Forward voltage

Max.

−1.2 V I

Unit

=±20V, VDS=0V

GS

= −1mA, VGS=0V

D

= −30V, VGS=0V

DS

= −10V, ID= −1mA

DS

= −2A, VGS= −10V

mΩ

D

= −1A, VGS= −4.5V

I

D

= −1A, VGS= −4V

mΩ

D

= −10V, ID= −1A

DS

= −10V

DS

=0V

GS

− pF f=1MHz

− ns

− ns

− ns

− ns

−

−

nC
nC

V

DD

ID= −1A
V

GS

= − 10V

R

L

=15Ω

R

G

=10Ω

V

−15V

DD

= −2A

I

D

L

=7.5Ω

R

Unit

= −0.8A, VGS=0V

S

−15V

Conditions

V

= −5V

GS

G

=10Ω

R

Conditions

RSR020P03

Rev.A 2/4