ROHM RSQ020N03 Technical data
RSQ020N03
Transistors
4V Drive Nch MOSFET
RSQ020N03
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount p ackage (TSMT6).
zApplications
Switching
zPackaging specifications
Package
Type
RSQ020N03
Code
Basic ordering unit (pieces)
zInner circuit
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
D
∗1
∗1
∗2
Limits Unit
30
20
±2.0
±8.0
1.0
8.0
1.25
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol Limits Unit
∗
100
TSMT6
2.9
1.9
(6)
(5)
1pin mark
(6)
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1)
0.4
Abbreviated symbol : QQ
(5)
∗2
(2)
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
°C/WRth(ch-a)
1.0MAX
0.950.95
(4)
(2)
0.85
0.7
2.8
1.6
(4)
(3)
0.16
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
0~0.1
(3)
Each lead has same dimensions
∗1
0.6
~
0.3
Rev.A 1/4
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
I
GSS
I
DSS
GS (th)
DS (on)
Y
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
Q
Q
gs
Q
gd
V
SD
∗
∗
fs
∗
∗
∗
∗
f
∗
g
∗
∗
Min.−Typ. Max.
− 10 µAVGS=20V, VDS=0V
30 −−VID= 1mA, VGS=0V
−−1 µAV
1.0 − 2.5 V V
− 96 134 I
− 148 207 mΩ
− 168 235 I
1.5 −−SV
− 110 − pF V
− 4022− pF V
−
7
−
9
−
16
−
4
−
2.2
−
0.7
−
0.6
−−nC
Min. Typ. Max.
−−1.2 V IS= 1.0A, VGS=0VForward voltage
Unit
= 30V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 2.0A, VGS= 10V
mΩ
D
= 2.0A, VGS= 4.5V
I
D
= 2.0A, VGS= 4V
mΩ
D
= 10V, ID= 2.0A
DS
= 10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
3.1 nC
− nC
V
DD
ID= 1A
V
GS
= 10V
R
L
=15Ω
R
G
=10Ω
V
15V
DD
I
= 2.0A
D
L
= 7.5Ω RG=10Ω
R
Unit
Conditions
15V
Conditions
RSQ020N03
V
= 5V
GS
Rev.A 2/4
Loading...