Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
RSQ015N06
Nch 60V 1.5A Power MOSFET
Junction temperature
T
j
150
°C
Range of storage temperature
T
stg
-55 to +150
°C
Power dissipation
Gate - Source voltage
V
GSS
20
V
P
D
*3
1.25
W
P
D
*4
0.6
W
Continuous drain current
I
D
*1
1.5
A
Pulsed drain current
I
D,pulse
*2
6
A
Drain - Source voltage
V
DSS
60
V
Taping code
TR
Marking
PX
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
lPackaging specifications
Type
Packaging
Taping
lApplication
Reel size (mm)
180
DC/DC converters
Tape width (mm)
8
Basic ordering unit (pcs)
3,000
lFeatures
lInner circuit
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
lOutline
V
DSS
60V
R
DS(on)
(Max.)
290mW
I
D
1.5A
P
D
1.25W
(1)
(2)
(3)
(4)
(5)
(6)
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
TSMT6
*1 ESD PROTECTION DIODE
*2 BODY DIODE
1/11
2012.06 - Rev.B
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Data Sheet
RSQ015N06
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a seramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
f = 1MHz, open drain
Static drain - source
on - state resistance
R
DS(on)
*5
S-10
-
Transconductance
gfs
*5
V
DS
= 10V, ID = 1.5A
1.0
2.4
-
VGS=4.5V, ID=1.5A
-
240
330
VGS=4V, ID=1.5A
-
255
350
VGS=10V, ID=1.5A, Tj=125°C
VGS=10V, ID=1.5A
-
210
290-360
510
V
Gate threshold voltage
temperature coefficient
ΔV
(GS)th
ΔT
j
ID = 1mA
referenced to 25°C
-
-4.4
-
mV/°C
Gate threshold voltage
V
GS (th)
V
DS
= 10V, ID = 1mA
1.0-2.5
mW
-
-
mA
Gate - Source leakage current
I
GSS
V
GS
= 20V, V
DS
= 0V
-
-
10
mA
Zero gate voltage drain current
I
DSS
V
DS
= 60V, V
GS
= 0V
--1
lThermal resistance
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - ambient
R
thJA
*4
--208
°C/W
Thermal resistance, junction - ambient
R
thJA
*3
--100
°C/W
Gate input resistannce
R
G
W
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
V
Breakdown voltage
temperature coefficient
ΔV
(BR)DSS
ΔT
j
ID = 1mA
referenced to 25°C
-67-
mV/°C
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, ID = 1mA
60
2/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSQ015N06
*5 Pulsed
A
Forward voltage
V
SD
*5
V
GS
= 0V, Is = 1.5A
--1.2
V
Inverse diode continuous,
forward current
IS
*1
Ta = 25°C
--1
Max.-0.8
-
Gate - Drain charge
Q
gd
*5
-
0.5
-
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
nC
V
DD
⋍ 30V, ID = 1.5A
VGS = 10V
-
3.5
-
Gate - Source charge
Q
gs
*5
V
DD
⋍ 30V, ID = 1.5A
VGS = 5V
V
DD
⋍ 30V, ID = 1.5A
VGS = 5V
-2-
Total gate charge
Q
g
*5
-
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
t
f
*5
RG = 10W
-
10
Unit
Min.
Typ.
Max.
Turn - on delay time
t
d(on)
*5
V
DD
⋍ 30V, V
GS
= 10V
-6-
ns
Rise time
t
r
*5
ID = 0.7A
-9-
Turn - off delay time
t
d(off)
*5
RL = 42.8W
-15-
Fall time
pF
Output capacitance
C
oss
V
DS
= 10V
-28-
Reverse transfer capacitance
C
rss
f = 1MHz
Input capacitance
C
iss
V
GS
= 0V
-
110--12-
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
3/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSQ015N06
lElectrical characteristic curves
0.1
1
10
100
1000
0.0001 0.01 1 100
T
a
=25ºC
Single Pulse
Fig.1 Power Dissipation Derating Curve
Power Dissipation : P
D
/P
D
max. [%]
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
Drain Current : -I
D
[A]
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r
(t)
Pulse Width : PW [s]
Fig.4 Single Pulse Maxmum Power dissipation
Peak Transient Power : P(W)
Pulse Width : PW [s]
0
20
40
60
80
100
120
0 50 100 150 200
0.01
0.1
1
10
0.1 1 10 100
Operation in this area
is limited by RDS(on)
( VGS = 10V ）
PW = 100μs
PW = 10ms
PW = 1ms
DC Operation
T
a
=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0.001
0.01
0.1
1
10
0.0001 0.01 1 100
T
a
=25ºC
Single Pulse
Rth(ch
-a)=100ºC/W
Rth(ch
-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm ×
30mm × 0.8mm)
top D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
4/11
2012.06 - Rev.B
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Data Sheet
RSQ015N06
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Drain Current : -I
D
[A]
Drain - Source Voltage : -VDS [V]
Fig.6 Typical Output Characteristics(II)
Drain - Source Voltage : -VDS [V]
Avalanche Energy : E
AS
/ E
AS
max. [%]
0
0.5
1
1.5
2
2.5
3
0 0.2 0.4 0.6 0.8 1
VGS= 2.4V
Ta=25ºC
Pulsed
VGS= 10V
VGS= 4.5V
VGS= 4.0V
VGS= 2.8V
0
0.5
1
1.5
2
2.5
3
0 2 4 6 8 10
VGS= 2.4V
Ta=25ºC
Pulsed
VGS= 10V
VGS= 4.5V
VGS= 4.0V
VGS= 2.8V
5/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSQ015N06
lElectrical characteristic curves
Fig.7 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : V
(BR)DSS
[V]
Junction Temperature : Tj [°C]
Fig.8 Typical Transfer Characteristics
Gate - Source Voltage : VGS [V]
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : V
GS(th)
[V]
Junction Temperature : Tj [°C]
Fig.10 Transconductance vs. Drain Current
Transconductance : g
fs
[S]
Drain Current : ID [A]
Drain Current : I
D
[A]
0
30
60
90
120
-50 0 50 100 150
V
GS
=0V
I
D
=1mA
pulsed
0.001
0.01
0.1
1
10
0 1 2 3
VDS= 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0
0.5
1
1.5
2
2.5
-50 0 50 100 150
VDS=10V
I
D
=1mA
pulsed
0.1
1
10
0.01 0.1 1 10
VDS= 10V
Pulsed
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
6/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSQ015N06
lElectrical characteristic curves
Fig.11 Drain CurrentDerating Curve
Drain Current Dissipation
: I
D
/I
D
max. (%)
Junction Temperature : Tj [ºC]
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Static Drain - Source On-State Resistance
: R
DS(on)
[mΩ]
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance
: R
DS(on)
[mΩ]
Gate - Source Voltage : VGS [V]
0
0.2
0.4
0.6
0.8
1
1.2
-25 0 25 50 75 100 125 150
0
100
200
300
400
500
600
0 5 10 15 20
Ta=25ºC
Pulsed
ID= 0.7A
ID= 1.5A
10
100
1000
10000
0.01 0.1 1 10
VGS= 4.0V
VGS= 4.5V
VGS= 10V
.
Ta= 25ºC
Pulsed
0
100
200
300
400
-50 -25 0 25 50 75 100 125 150
V
GS
=10V
I
D
=1.5A
pulsed
7/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSQ015N06
lElectrical characteristic curves
10
100
1000
10000
0.01 0.1 1 10
VGS= 10V
Pulsed
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
10
100
1000
10000
0.01 0.1 1 10
VGS= 4.5V
Pulsed
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
10
100
1000
10000
0.01 0.1 1 10
VGS= 4.0V
Pulsed
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
Fig.15 Static Drain-Source On-State
Resistance vs. Drain Current(II)
Static Drain - Source On-State Resistance
: R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
Static Drain - Source On-State Resistance
: R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Static Drain - Source On-State Resistance
: R
DS(on)
[mΩ]
Drain Current : ID [A]
8/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSQ015N06
lElectrical characteristic curves
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : VDS [V]
Fig.20 Dynamic Input Characteristics
Gate - Source Voltage : V
GS
[V]
Total Gate Charge : Qg [nC]
Fig.19 Switching Characteristics
Switching Time : t [ns]
Drain Current : ID [A]
Fig.21 Source Current
vs. Source Drain Voltage
Source Current : I
S
[A]
Source-Drain Voltage : VSD [V]
1
10
100
1000
0.01 0.1 1 10 100
Ciss
Crss
Ta=25ºC
f=1MHz
VGS=0V
Coss
1
10
100
1000
0.01 0.1 1 10
tf
td(on)
td(off)
Ta=25ºC
VDD= 30V
VGS=10V
RG=10Ω
Pulsed
tr
0
2
4
6
8
10
0 1 2 3 4
Ta=25ºC
VDD= 30V
ID= 1.5A
RG=10Ω
Pulsed
0.01
0.1
1
10
0 0.5 1 1.5
VGS=0V
Pulsed
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
9/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSQ015N06
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
10/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSQ015N06
lDimensions (Unit : mm)
Dimension in mm/inches
TSMT6
Patterm of terminal position areas
e
D
E
H
b
E
Lp
L1
A3
c
A
x S A
A1 A2
S
y
S
A
e1
e
b2
l1
Q
MIN MAX MIN MAX
A - 1.00 - 0.039
A1 0.00 0.10 0 0.004
A2 0.75 0.95 0.03 0.037
A3
b 0.35 0.50 0.014 0.02
c 0.10 0.26 0.004 0.01
D 2.80 3.00 0.11 0.118
E 1.50 1.80 0.059 0.071
e
HE 2.60 3.00 0.102 0.118
L1 0.30 0.60 0.012 0.024
Lp 0.40 0.70 0.016 0.028
Q 0.05 0.25 0.002 0.01
x - 0.20 - 0.008
y - 0.10 - 0.004
MIN MAX MIN MAX
e1
b2 0.70 - 0.028
l1 - 0.90 - 0.035
0.25
0.01
DIM
MILIMETERS
INCHES
2.10
0.08
DIM
MILIMETERS
INCHES
0.95
0.04
11/11
2012.06 - Rev.B
Notes
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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