RSM002P03
Transistors
4V Drive Pch MOSFET
RSM002P03
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) Small package (VMT3).
3) 4V drive.
zApplications
Switching
zPackaging specifications zInner circuit
VMT3
(1)Gate
(2)Source
(3)Drain
1.2
0.32
(3)
(2)
(1)
0.22
0.40.4
0.8
Abbreviated symbol : WP
0.2
1.2
0.8
0.13
0.2
0.5
Type
Package
Code
Basic ordering unit (pieces)
Taping
T2L
8000
RSM002P03
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Symbol
DSS
GSS
D
∗1
DP
∗2
P
D
Symbol Limits Unit
Rth(ch-a)
Limits Unit
−30
±20
±0.2
±0.4
0.15
150
−55 to +150
∗
833
°C/W
(3)
(1)
∗1
∗2
(2)
(1) Gate
(2) Source
(3) Drain
VV
VV
AI
AI
W
°CTch
°CTstg
Rev.A 1/4
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
Min.−Typ. Max.
I
GSS
−±10 µAVGS= ±20V, VDS=0V
−30 −−VI
I
DSS
GS (th)
−−−1 µAV
−1.0 −−2.5 V V
− 0.9 1.4 I
∗
DS (on)
− 1.4 2.1 Ω
− 1.6 2.4 I
∗
Y
0.2 −−SV
fs
C
C
C
t
d (on)
t
d (off)
− 30 − pF V
iss
− 4
oss
−
rss
∗
∗
t
r
∗
∗
t
f
5
8
−
5
−
30
−
40
−−ns
Min. Typ. Max.
V
SD
−−−1.2 V IS= −0.1A, VGS=0VForward voltage
Unit
= −1mA, VGS=0V
D
= −30V, VGS=0V
DS
= −10V, ID= −1mA
DS
= −0.2A, VGS= −10V
Ω
D
I
= −0.15A, VGS= −4.5V
D
Ω
= −0.15A, VGS= −4.0V
D
= −10V, ID= −0.15A
DS
= −10V
DS
− pF V
GS
= 0V
− pF f=1MHz
V
− ns
− ns
− ns
DD
ID= −0.15A
V
GS
= −10V
R
L
= 100Ω
R
G
= 10Ω
Unit
RSM002P03
Conditions
−15V
Conditions
Rev.A 2/4
Transistors
zElectrical characteristics curves
100
10
CAPACITANCE : C (pF)
1
0.01
0.1 1 10 100
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
1
(A)
D
Ta=125°C
0.1
75°C
25°C
−25°C
Ta=25°C
f=1MHz
GS
=0V
V
Ciss
Crss
Coss
VDS= −10V
Pulsed
1000
tf
100
td(off)
10
SWITCHING TIME : t (ns)
1
0.01
0.1 1
DRAIN CURRENT : −ID (A)
Fig.2 Switching Characteristics
20
(Ω)
DS
15
10
ID= −125mA
ID= −250mA
td(on)
RSM002P03
Ta=25°C
DD
= −15V
V
V
GS
= −10V
G
=10Ω
R
Pulsed
tr
Ta=25°C
Pulsed
8
Ta=25°C
DD
= −15V
V
(V)
7
I
D
=−250mA
GS
G
=10Ω
R
6
Pulsed
5
4
3
2
1
GATE-SOURCE VOLTAGE : −V
0
0.2 0.4 0.6 0.8 1
0
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
1
(A)
DR
Ta=125°C
75°C
25°C
0.1
−25°C
VGS=0V
Pulsed
0.01
DRAIN CURRENT : −I
0.001
1.4 1.6 2.01.8 2.8 3.0 3.2 3.42.2 2.4 2.6
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.4 Typical Transfer Characteristics
10
(Ω)
Ta=125°C
DS (on)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
1
0.01
75°C
25°C
−25°C
0.1
DRAIN CURRENT : −ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
VGS= −10V
Pulsed
5
ON-STATE RESISTANCE : R
STATIC DRAIN-SOURCE
0
0
21046819357
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10
Ta=125°C
(Ω)
DS (on)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
1
1
0.01
75°C
25°C
−25°C
DRAIN CURRENT : −ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
REVERSE DRAIN CURRENT : −I
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage
VGS= −4.5V
Pulsed
0.1
10
Ta=125°C
(Ω)
DS (on)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
1
75°C
25°C
−25°C
1
0.1
0.01
DRAIN CURRENT : −ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
VGS= −4V
Pulsed
0.1
1
Rev.A 3/4
Transistors
10
(Ω)
DS (on)
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
0.01
DRAIN CURRENT : −ID (A)
Fig.10 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
VGS= −4V
0.1 1
VGS= −4.5V
VGS= −10V
Ta=25°C
Pulsed
RSM002P03
Rev.A 4/4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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