ROHM RSJ650N10 Technical data
Data Sheet
4V Drive Nch MOSFET
RSJ650N10
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
LPTS
10.1
4.5
1.3
Features
1) Low on-resistance.
2) High power package.
9.0
13.1
1.0
3.0
3) 4V drive.
Application
Switching
Packaging specifications Inner circuit
Package Taping
Type
Code TL
Basic ordering unit (pieces) 1000
RSJ650N10
(1) Gate
(2) Drain
(3) Source
Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Power dissipation P
Symbol Limits Unit
DSS
GSS
D
DP
S
SP
D
*3
*1
*3
*1
*2
100 V
20 V
65 A
130 A
65 A
130 A
100 W
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 PW10s, Duty cycle1%
=25°C
*2 T
C
*3 Please use within the range of SOA.
1.24
2.54
5.08
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
0.4
0.78
2.7
∗1
(1) (2) (3)
1.2
∗2
Thermal resistance
Parameter
Channel to Case Rth (ch-c) 1.25 C / W
* TC=25°C
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Symbol Limits Unit
*
1/6
2011.06 - Rev.A
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Data Sheet
RSJ650N10
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
Conditions
--10 AVGS=20V, VDS=0V
100 - - V ID=1mA, VGS=0V
--1AVDS=100V, VGS=0V
1 - 2.5 V VDS=10V, ID=1mA
- 6.5 9.1 I
*
m
- 7 9.8 I
*
*
l45 - - SVDS=10V, ID=32.5A
- 10780 - pF VDS=25V
- 785 - pF VGS=0V
- 560 - pF f=1MHz
- 45 - ns VDD 50V, ID=32.5A
*
*
- 170 - ns VGS=10V
*
*
- 640 - ns RL=1.54
*
*
- 480 - ns RG=10
*
*
- 260 - nC VDD 50V, ID=32.5A
*
*
- 24 - nC VGS=10V
*
*
-60-nC
*
*
=32.5A, VGS=10V
D
=32.5A, VGS=4V
D
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
Conditions
- - 1.5 V Is=65A, VGS=0V
2/6
2011.06 - Rev.A
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Data Sheet
RSJ650N10
Electrical characteristic curves (Ta=25C)
0
10
20
30
40
50
0 0.2 0.4 0.6 0.8 1
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=2.5V
VGS=10.0V
VGS=4.0V
VGS=4.5V
VGS=2.8V
VGS=3.0V
Ta=25°C
pulsed
0
10
20
30
40
50
0 2 4 6 8 10
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=2.5V
VGS=10.0V
VGS=4.0V
VGS=4.5V
VGS=2.8V
VGS=3.0V
Ta=25°C
pulsed
1
10
100
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
R
DS(on)
[mW]
Drain Current : ID [A]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4.0V
VGS=10V
Ta=25°C
pulsed
1
10
100
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
R
DS(on)
[mW]
Drain Current : ID [A]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
VGS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
10
100
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
R
DS(on)
[mW]
Drain Current : I
[A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
VGS=4V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
Forward Transfer Admittance
Y
fs
[S]
Drain Current : ID [A]
Fig.6 Forward Transfer Admittance vs. Drain Current
VDS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
3/6
2011.06 - Rev.A
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